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Record Nr. |
UNISA990000477000203316 |
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Autore |
CASSESE, Sabino |
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Titolo |
Portrait de l'Italie actuelle / sous la directionde Sabino Cassese |
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Pubbl/distr/stampa |
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Paris : La documentation française, 2001 |
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Descrizione fisica |
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Collana |
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Notes et études documentaires ; 5130 |
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Disciplina |
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Soggetti |
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Società - Italia - Sec. 19.-20 |
Italia Cultura Sec. 19.-20. |
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Collocazione |
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XXX.A. Coll. 150/ 254 (COLL. HCP 5130) |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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2. |
Record Nr. |
UNINA9910830383003321 |
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Titolo |
Liquid phase epitaxy of electronic, optical, and optoelectronic materials [[electronic resource] /] / edited by Peter Capper, Michael Mauk |
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Pubbl/distr/stampa |
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Chichester, England ; ; Hoboken, NJ, : Wiley, c2007 |
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ISBN |
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1-281-03220-4 |
9786611032203 |
0-470-31950-X |
0-470-31949-6 |
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Descrizione fisica |
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1 online resource (465 p.) |
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Collana |
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Wiley series in materials for electronic and optoelectronic applications |
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Altri autori (Persone) |
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Disciplina |
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537.622 |
621.3815/2 |
621.38152 |
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Soggetti |
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Electronics - Materials |
Optical materials |
Optoelectronic devices - Materials |
Semiconductors |
Liquid phase epitaxy |
Crystal growth |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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Note generali |
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Description based upon print version of record. |
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Nota di bibliografia |
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Includes bibliographical references and index. |
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Nota di contenuto |
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Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials; Contents; Series Preface; Preface; Acknowledgements; List of Contributors; 1 Introduction to Liquid Phase Epitaxy; 1.1 General aspects of liquid phase epitaxy; 1.2 Epitaxial growth modes, growth mechanisms and layer thicknesses; 1.3 The substrate problem; 1.4 Conclusions; Acknowledgements; References; 2 Liquid Phase Epitaxy in Russia Prior to 1990; 2.1 Introduction; 2.2 Specific features of growth of quantum-well heterostructures by LPE; 2.2.1 LPE growth from a capillary; 2.2.2 Low-temperature LPE |
2.2.3 LPE growth of InGaAsP quantum well heterostructures2.3 Rare-earth elements in LPE technology of some III-V binary compounds and solid solutions; 2.4 Conclusions; Acknowledgements; References; 3 Phase Diagrams and Modeling in Liquid Phase Epitaxy; 3.1 Introduction; 3.2 Equilibrium phase diagrams; 3.2.1 Binary, ternary and quaternary phase diagrams; 3.2.2 Calculation of binary, ternary and quaternary phase diagrams; 3.2.3 Calculation of phase diagrams considering the surface, interface and strain energies; 3.2.4 Experimental determination of phase diagrams; 3.2.5 Miscibility gap |
3.3 Technologies of LPE growth3.4 III-V materials for LPE growth; 3.5 Lattice matching; 3.6 Growth of misfit-dislocation-free wafers; 3.7 Phase diagrams of growth mode; 3.8 Growth kinetics; 3.8.1 Calculation of III-V layer thickness; 3.8.2 Compositional variation in III-V ternary layers; 3.9 Summary; References; Appendix; 4 Equipment and Instrumentation for Liquid Phase Epitaxy; 4.1 Introduction; 4.2 Overview, general description and operation of horizontal slideboat LPE system; 4.3 Crucibles and slideboats; 4.4 Alternative slideboat designs; 4.5 Furnaces and heating; 4.6 LPE ambient |
4.7 Tubes, sealing and gas handling4.8 Controllers and heating; 4.9 Temperature measurements and other instrumentation; 4.10 Safety; 4.11 Production LPE systems; References; 5 Silicon, Germanium and Silicon-Germanium Liquid Phase Epitaxy; 5.1 Introduction and scope of review; 5.2 Historical perspective; 5.3 Basis of silicon and germanium LPE; 5.3.1 Nucleation of silicon from a molten metal solution; 5.4 Silicon LPE methods; 5.4.1 Steady-state methods of solution growth and LPE; 5.5 Solvent selection; 5.6 Low-temperature silicon LPE |
5.7 Purification of silicon for solar cells in an LPE process5.8 Electrical properties of LPE-grown silicon; 5.9 LPE of Si- and Ge-based alloys; 5.10 Selective LPE and liquid phase ELO; 5.11 Solar cells; 5.11.1 Epitaxial silicon solar cells by LPE; 5.11.2 Si solution growth on nonsilicon substrates for solar cells; 5.12 Other applications of silicon and germanium LPE; 5.13 Conclusions and outlook; References; Appendix 1. Phase equilibria modeling: The silicon-metal liquidus; A1.1 The silicon-metal binary liquidus; A1.2 Alloy solvents; Appendix 2. Impurities and doping in silicon LPE |
Appendix 3. Effects of oxygen and water vapor in Si LPE |
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Sommario/riassunto |
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Liquid-Phase Epitaxy (LPE) is a technique used in the bulk growth of crystals, typically in semiconductor manufacturing, whereby the crystal is grown from a rich solution of the semiconductor onto a substrate in layers, each of which is formed by supersaturation or cooling. At least 50% of growth in the optoelectronics area is currently focussed on LPE. This book covers the bulk growth of semiconductors, i.e. silicon, |
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gallium arsenide, cadmium mercury telluride, indium phosphide, indium antimonide, gallium nitride, cadmium zinc telluride, a range of wide-bandgap II-VI compounds, diamond and |
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