| |
|
|
|
|
|
|
|
|
1. |
Record Nr. |
UNINA9910683391403321 |
|
|
Titolo |
Pharmaceutical Crystals . Volume II / / Etsuo Yonemochi, Hidehiro Uekusa, editor |
|
|
|
|
|
|
|
Pubbl/distr/stampa |
|
|
Basel : , : MDPI - Multidisciplinary Digital Publishing Institute, , 2023 |
|
|
|
|
|
|
|
ISBN |
|
|
|
|
|
|
Descrizione fisica |
|
1 online resource (176 pages) |
|
|
|
|
|
|
Disciplina |
|
|
|
|
|
|
Soggetti |
|
|
|
|
|
|
Lingua di pubblicazione |
|
|
|
|
|
|
Formato |
Materiale a stampa |
|
|
|
|
|
Livello bibliografico |
Monografia |
|
|
|
|
|
Sommario/riassunto |
|
The crystalline state is the most commonly used as an essential solid in active pharmaceutical ingredients (API). The characterization of pharmaceutical crystals encompasses many scientific disciplines. Still, the core is crystal structure analysis, which reveals the molecular structure of essential pharmaceutical compounds. Crystal structure analysis provides important structural information related to the API's wide range of physicochemical properties, such as solubility, stability, tablet performance, color, and hygroscopicity. These properties should be understood in terms of molecular structures and interactions between molecules in crystals. Information on three-dimensional molecular structures also affords insights into the biological activity of molecules. The second reprint in the series, "Crystalline Pharmaceuticals (Volume II)" focused on the relationship between crystal structure and physicochemical properties. In particular, the new crystal structure of pharmaceutical compounds involving multi-component crystals, such as co-crystals, salts and hydrates, and polymorph crystals, were reported with interest. Such crystal structures contributed to the latest studies that combine morphology, spectroscopic, theoretical calculation, and thermal analysis with the crystallographic study. Thus, this reprint highlights the importance of crystal structure information in many areas of pharmaceutical science and presents current trends in the structure-property study of pharmaceutical crystals. The Guest Editors of this reprint hope the |
|
|
|
|
|
|
|
|
|
|
|
|
|
readers enjoy a wide variety of recent studies on "Crystalline Pharmaceuticals." |
|
|
|
|
|
|
2. |
Record Nr. |
UNINA9910830310103321 |
|
|
Autore |
Voldman Steven H |
|
|
Titolo |
Latchup [[electronic resource] /] / Steven H. Voldman |
|
|
|
|
|
Pubbl/distr/stampa |
|
|
Chichester, West Sussex, England ; ; Hoboken, NJ, : John Wiley, c2007 |
|
|
|
|
|
|
|
ISBN |
|
1-281-31816-7 |
9786611318161 |
0-470-51617-8 |
0-470-51616-X |
|
|
|
|
|
|
|
|
Descrizione fisica |
|
1 online resource (474 p.) |
|
|
|
|
|
|
Disciplina |
|
|
|
|
|
|
|
|
Soggetti |
|
Metal oxide semiconductors, Complementary - Defects |
Metal oxide semiconductors, Complementary - Reliability |
|
|
|
|
|
|
|
|
Lingua di pubblicazione |
|
|
|
|
|
|
Formato |
Materiale a stampa |
|
|
|
|
|
Livello bibliografico |
Monografia |
|
|
|
|
|
Note generali |
|
Description based upon print version of record. |
|
|
|
|
|
|
Nota di bibliografia |
|
Includes bibliographical references and index. |
|
|
|
|
|
|
Nota di contenuto |
|
Latchup; Contents; About the Author; Preface; Acknowledgements; 1 CMOS Latchup; 1.1 CMOS LATCHUP; 1.1.1 CMOS Latchup-What is Latchup?; 1.1.2 CMOS Latchup-Why is Latchup Still an Issue ?; 1.1.3 Early CMOS Latchup History; 1.2 FUNDAMENTAL CONCEPTS OF LATCHUP DESIGN PRACTICE; 1.3 BUILDING A CMOS LATCHUP STRATEGY; 1.3.1 Building a CMOS Business Strategy - 18 Steps in Building a CMOS Latchup Business Strategy; 1.3.2 Building a CMOS Latchup Technology Strategy - 18 Steps in Building a CMOS Latchup Technology Strategy; 1.4 CMOS LATCHUP TECHNOLOGY MIGRATION STRATEGY |
1.5 KEY METRICS OF LATCHUP DESIGN PRACTICE1.6 CMOS LATCHUP TECHNOLOGY TRENDS AND SCALING; 1.7 KEY DEVELOPMENTS; 1.7.1 Key Innovations; 1.7.2 Key Contributions; 1.7.3 Key Patents; 1.8 LATCHUP FAILURE MECHANISMS; 1.9 CMOS LATCHUP EVENTS; 1.9.1 Power-Up Sequence Initiated Latchup; 1.9.2 Input Pin Overshoot and |
|
|
|
|
|
|
|
|
|
|
|
Power-Up Sequence Initiated Latchup; 1.9.3 Input Pin Undershoot and Power-Up Sequence Initiated Latchup; 1.9.4 Multiple Power Supply Power-Up Sequence Initiated Latchup; 1.9.5 Power Supply Overshoot Initiated Latchup; 1.9.6 Power Supply Undershoot Initiated Latchup |
1.9.7 Power Supply (Ground Rail) Undershoot Initiated Latchup1.10 ELECTROSTATIC DISCHARGE SOURCES; 1.10.1 Human Body Model ESD Event; 1.10.2 Machine Model ESD Event; 1.10.3 Cable Discharge Event Source; 1.11 SINGLE EVENT LATCHUP; 1.11.1 High-Energy Photon Emissions; 1.11.2 Alpha Particle Ionizing Source; 1.11.3 Cosmic Ray Source; 1.11.4 Heavy Ion Source; 1.12 SUMMARY AND CLOSING COMMENTS; PROBLEMS; REFERENCES; 2 Bipolar Transistors; 2.1 THE BIPOLAR TRANSISTOR AND CMOS LATCHUP; 2.1.1 Fundamental Equations of Semiconductors and the Drift-Diffusion Current Constitutive Relationships |
2.1.2 Diode Forward Bias Conditions2.1.3 Diode Forward Bias Conditions and High-level Injection; 2.2 BIPOLAR TRANSISTOR; 2.2.1 Bipolar Current Gain; 2.2.2 Bipolar Collector-to-Emitter Transport Factor; 2.2.3 Bipolar Current Characteristics; 2.2.4 Bipolar Model Gummel Plot; 2.2.5 Bipolar Current Model-Ebers-Moll Model; 2.2.6 Bipolar Transistor Base Defect; 2.2.7 Bipolar Transistor Emitter Defect; 2.2.8 Bipolar Base Current - Base Defect and Emitter Defect Relation to Bipolar Current Gain; 2.3 RECOMBINATION MECHANISMS; 2.3.1 Shockley-Read-Hall (SRH) Generation-Recombination Model |
2.3.2 Auger Recombination Model2.3.3 Surface Recombination Mechanisms; 2.3.4 Surface Recombination Velocity; 2.3.5 Recombination Mechanisms and Neutron Irradiation; 2.3.6 Recombination Mechanisms and Gold Recombination Centers; 2.4 PHOTON CURRENTS IN METALLURGICAL JUNCTIONS; 2.5 AVALANCHE BREAKDOWN; 2.5.1 Bipolar Transistor Breakdown; 2.5.2 MOSFET Avalanche Breakdown; 2.6 VERTICAL BIPOLAR TRANSISTOR MODEL; 2.7 LATERAL BIPOLAR TRANSISTOR MODELS; 2.7.1 Lindmayer-Schneider Model; 2.7.2 Bipolar Current Gain with Lateral and Vertical Contributions |
2.7.3 Lateral Bipolar Transistor Models - Nonfield-Assisted |
|
|
|
|
|
|
Sommario/riassunto |
|
Interest in latchup is being renewed with the evolution of complimentary metal-oxide semiconductor (CMOS) technology, metal-oxide-semiconductor field-effect transistor (MOSFET) scaling, and high-level system-on-chip (SOC) integration. Clear methodologies that grant protection from latchup, with insight into the physics, technology and circuit issues involved, are in increasing demand. This book describes CMOS and BiCMOS semiconductor technology and their sensitivity to present day latchup phenomena, from basic over-voltage and over-current conditions, single event latchup (SEL) and cabl |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
3. |
Record Nr. |
UNINA9911034278003321 |
|
|
Titolo |
Il rito penale tra garanzie, tutele e istanze securitarie : ricordando Enzo Zappalà : atti del Convegno (Catania, 3 e 4 ottobre 2024) / a cura di Vania Patanè ... [et al.] |
|
|
|
|
|
|
|
Pubbl/distr/stampa |
|
|
Napoli, : Edizioni scientifiche italiane, c2025 |
|
|
|
|
|
|
|
ISBN |
|
|
|
|
|
|
Descrizione fisica |
|
|
|
|
|
|
Collana |
|
Pubblicazioni della Facoltà di giurisprudenza, Università di Catania. Nuova serie ; 303 |
|
|
|
|
|
|
|
|
Disciplina |
|
|
|
|
|
|
Locazione |
|
|
|
|
|
|
Collocazione |
|
|
|
|
|
|
Lingua di pubblicazione |
|
|
|
|
|
|
Formato |
Materiale a stampa |
|
|
|
|
|
Livello bibliografico |
Monografia |
|
|
|
|
| |