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Record Nr. |
UNINA9911031661203321 |
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Autore |
Xu Ke |
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Titolo |
GaN Single Crystal Growth and Application / / by Ke Xu, Jianfeng Wang, Guoqiang Ren, Zongliang Liu |
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Pubbl/distr/stampa |
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Singapore : , : Springer Nature Singapore : , : Imprint : Springer, , 2025 |
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ISBN |
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Edizione |
[1st ed. 2025.] |
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Descrizione fisica |
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1 online resource (336 pages) |
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Collana |
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Wide Bandgap Semiconductors, , 2948-2615 |
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Altri autori (Persone) |
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WangJianfeng |
RenGuoqiang |
LiuZongliang |
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Disciplina |
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Soggetti |
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Materials |
Electronics |
Telecommunication |
Materials for Devices |
Electronics and Microelectronics, Instrumentation |
Microwaves, RF Engineering and Optical Communications |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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Nota di contenuto |
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Basic Characteristics of GaN Monocrystals -- Basic Characteristics of Gallium Nitride Single Crystal Materials -- Hydride Vapor Phase Epitaxy Method -- Ammonothermal method -- Na-flux method -- Homogeneous Epitaxial Growth Technology of Gallium Nitride Single Crystals -- Progress in Optoelectronic Device Applications -- Applications of Freestanding Gallium Nitride Sbustrates- in Power Electronic and Microwave RF Devices. |
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Sommario/riassunto |
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Based on the author's many years of research, this book expands and complements the latest research results in this field. It introduces in detail the basic principle, growth technology, development status and application trend of GaN single crystal material growth. The author team adopts an open and learning attitude and discusses the future development of GaN material growth and device applications with colleagues in the field. It is hoped that the publication of this book can present the frontier development status and prospect of GaN material growth and application to personnel in related fields, hoping to make |
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