Charge transport in disordered solids with applications in electronics / / edited by Sergei Baranovski

• Record Nr.: UNINA9911020362203321
• Pubbl/distr/stampa: Hoboken, NJ, : Wiley, c2006
• ISBN: 9786610649464; 9781280649462; 1280649461; 9780470095065; 0470095067; 9780470095058; 0470095059
• Descrizione fisica: 1 online resource (499 p.)
• Collana: Wiley series in materials for electronic and optoelectronic applications
• Altri autori (Persone): BaranovskiSergei
• Disciplina: 621.3815/2
• Soggetti: Amorphous semiconductors - Electric properties; Solids - Electric properties; Semiconductors - Materials
• Lingua di pubblicazione: Inglese
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Note generali: Description based upon print version of record.
• Nota di bibliografia: Includes bibliographical references and index.
• Nota di contenuto: Cover; Contents; Series Preface; Preface; 1: Charge Transport via Delocalized States in Disordered Materials; 1.1 INTRODUCTION; 1.2 TRANSPORT BY ELECTRONS IN EXTENDED STATES FAR FROM THE MOBILITY EDGES; 1.2.1 Weak-scattering theories; 1.2.2 Weak localization; 1.2.3 Interaction effects; 1.3 SCALING THEORY OF LOCALIZATION; 1.3.1 Main ideas of the scaling theory of localization; 1.3.2 The main equations of one-parameter scaling; 1.3.3 Model solutions; 1.3.4 Some predictions of the scaling theory; 1.3.5 Minimum metallic conductivity; 1.4 EXTENDED-STATE CONDUCTION IN THREE DIMENSIONS; 1.4.1 Activated conduction1.4.2 Extended-state conduction near the metal-insulator transition; 1.5 APPARENT MOBILITY EDGE AND EXTENDED-STATE CONDUCTION IN TWO-DIMENSIONAL SYSTEMS; 1.5.1 Experimental studies of the mobility edge in low-mobility two-dimensional systems; 1.5.2 Evidence for a true metal-insulator ; transition in high-mobility two-dimensional systems; 1.5.3 Evidence against a true metal-insulator transition in two-dimensional systems; 1.5.4 Temperature-dependent charge carrier scattering; 1.6 CONCLUSIONS; REFERENCES; 2: Description of Charge Transport in Amorphous Semiconductors; 2.1 INTRODUCTION2.2 GENERAL REMARKS ON CHARGE TRANSPORT IN DISORDERED MATERIALS; 2.3 HOPPING CHARGE TRANSPORT IN DISORDERED MATERIALS VIA LOCALIZED STATES; 2.3.1 Nearest-neighbor hopping; 2.3.2 Variable-range hopping; 2.4 DESCRIPTION OF CHARGE-CARRIER ENERGY RELAXATION AND HOPPING CONDUCTION IN INORGANIC NONCRYSTALLINE MATERIALS; 2.4.1 Dispersive transport in disordered materials; 2.4.2 The concept of the transport energy; 2.5 EINSTEIN'S RELATIONSHIP FOR HOPPING ELECTRONS; 2.5.1 Nonequilibrium charge carriers; 2.5.2 Equilibrium charge carriers; 2.6 STEADY-STATE PHOTOCONDUCTIVITY; 2.6.1 Low-temperature photoconductivity2.6.2 Temperature dependence of the photoconductivity; 2.7 THERMALLY STIMULATED CURRENTS-A TOOL TO DETERMINE DOS?; 2.8 DARK CONDUCTIVITY IN AMORPHOUS SEMICONDUCTORS; 2.9 NONLINEAR FIELD EFFECTS; 2.10 CONCLUDING REMARKS; REFERENCES; 3: Hydrogenated Amorphous Silicon-Material Properties and Device Applications; 3.1 INTRODUCTION; 3.2 PREPARATION AND STRUCTURAL PROPERTIES OF AMORPHOUS SILICON; 3.3 DENSITY OF STATES DISTRIBUTION IN THE ENERGY GAP; 3.3.1 Model of the density of states distribution; 3.3.2 Band-tail states; 3.3.3 Deep defect states; 3.4 OPTICAL PROPERTIES3.5 TRANSPORT PROPERTIES; 3.6 RECOMBINATION OF EXCESS CARRIERS; 3.6.1 Low-temperature regime (T 60 K); 3.7 DEVICE APPLICATIONS; 3.7.1 Schottky barrier diodes; 3.7.2 p-i-n diodes; 3.7.3 Thin-film transistors; 3.8 THIN-FILM SOLAR CELLS; REFERENCES; 4: Applications of Disordered Semiconductors in Modern Electronics: Selected Examples; 4.1 PERSPECTIVES ON AMORPHOUS SEMICONDUCTORS; 4.2 DIRECT CONVERSION DIGITAL X-RAY IMAGE DETECTORS; 4.3 X-RAY PHOTOCONDUCTORS; 4.4 STABILIZED AMORPHOUS SELENIUM (a-Se); 4.5 AVALANCHE MULTIPLICATION AND ULTRA-HIGH-SENSITIVE HARP VIDEO TUBE
• Sommario/riassunto: The field of charge conduction in disordered materials is a rapidly evolving area owing to current and potential applications of these materials in various electronic devices This text aims to cover conduction in disordered solids from fundamental physical principles and theories, through practical material development with an emphasis on applications in all areas of electronic materials. International group of contributorsPresents basic physical concepts developed in this field in recent years in a uniform mannerBrings up-to-date, in a one-stop source, a key evolving area in