1.

Record Nr.

UNINA9911019273403321

Autore

Ouisse Thierry

Titolo

Electron transport in nanostructures and mesoscopic devices / / Thierry Ouisse

Pubbl/distr/stampa

London, : ISTE

Hoboken, NJ, : Wiley, 2008

ISBN

1-282-16520-8

9786612165207

0-470-61139-1

0-470-39400-5

Descrizione fisica

1 online resource (399 p.)

Collana

ISTE ; ; v.52

Classificazione

VE 9850

Disciplina

530.4/1

Soggetti

Electron transport

Nanostructured materials - Electric properties

Nanostructures - Electric properties

Mesoscopic phenomena (Physics)

Lingua di pubblicazione

Inglese

Formato

Materiale a stampa

Livello bibliografico

Monografia

Note generali

Description based upon print version of record.

Nota di bibliografia

Includes bibliographical references and index.

Nota di contenuto

Electron Transport in Nanostructures and Mesoscopic Devices; Table of Contents; Chapter 1. Introduction; 1.1. Introduction and preliminary warning; 1.2. Bibliography; Chapter 2. Some Useful Concepts and Reminders; 2.1. Quantum mechanics and the Schrödinger equation; 2.1.1. A more than brief introduction; 2.1.2. The postulates of quantum mechanics; 2.1.3. Essential properties of observables; 2.1.4. Momentum operator; 2.1.5. Stationary states; 2.1.6. Probability current; 2.1.7. Electrons in vacuum and group velocity; 2.2. Energy band structure in a periodic lattice

2.3. Semi-classical approximation2.4. Electrons and holes; 2.5. Semiconductor heterostructure; 2.6. Quantum well; 2.6.1. 1D case; 2.6.2. Coupled quantum wells; 2.6.3. Quantum-confined Stark effect; 2.7. Tight-binding approximation; 2.8. Effective mass approximation; 2.8.1. Wannier functions; 2.8.2. Effective mass Schrödinger equation; 2.9. How good is the effective mass approximation in a confined structure?; 2.10. Density of states; 2.10.1. 3D case; 2.10.2. 2D case;



2.10.3. 1D case; 2.10.4. Summary; 2.11. Fermi-Dirac statistics; 2.12. Examples of 2D systems

2.13. Characteristic lengths and mesoscopic nature of electron transport2.14. Mobility: Drude model; 2.15. Conduction in degenerate materials; 2.16. Einstein relationship; 2.17. Low magnetic field transport; 2.18. High magnetic field transport; 2.18.1. Introduction; 2.18.2. Some reminders about the particle Hamiltonian in the presence of an electromagnetic field; 2.18.3. Action of a magnetic field (classical); 2.18.4. High magnetic field transport; 2.19. Exercises; 2.19.1. Exercise; 2.19.2. Exercise; 2.19.3. Exercise; 2.19.4. Exercise; 2.20. Bibliography

Chapter 3. Ballistic Transport and Transmission Conductance3.1. Conductance of a ballistic conductor; 3.2. Connection between 2D and 1D systems; 3.3. A classical analogy; 3.4. Transmission conductance: Landauer's formula; 3.5. What if the device length really does go down to zero?; 3.6. A smart experiment which shows you everything; 3.7. Relationship between the Landauer formula and Ohm's law; 3.8. Dissipation with a scatterer; 3.9. Voltage probe measurements; 3.10. Comment about the assumption that T is constant; 3.11. Generalization of Landauer's formula: Büttiker's formula

3.11.1. Büttiker's formula3.11.2. Three-terminal device; 3.11.3. Four-terminal device; 3.12. Non-zero temperature; 3.12.1. Large applied bias μ1-μ2>>0; 3.12.2. Incoherent states; 3.12.3. Coherent states; 3.12.4. Physical parameters included in the transmission probability; 3.12.5. Linear response (μ1-μ2<kBT or T(E)=Cst); 3.13. The integer quantum Hall effect; 3.13.1. The experiment; 3.13.2. The explanation; 3.14. Exercises; 3.14.1. Exercise; 3.14.2. Exercise; 3.14.3. Exercise; 3.14.4. Exercise; 3.14.5. Exercise; 3.15. Bibliography; Chapter 4. S-matrix Formalism

4.1. Scattering matrix or S-matrix

Sommario/riassunto

This book introduces researchers and students to the physical principles which govern the operation of solid-state devices whose overall length is smaller than the electron mean free path. In quantum systems such as these, electron wave behavior prevails, and transport properties must be assessed by calculating transmission amplitudes rather than microscopic conductivity. Emphasis is placed on detailing the physical laws that apply under these circumstances, and on giving a clear account of the most important phenomena. The coverage is comprehensive, with mathematics and theoretical material s



2.

Record Nr.

UNINA9911019238203321

Titolo

Nanostructured materials and nanotechnology  III : a collection of  papers presented at the 33rd  International Conference on Advanced Ceramics and Composites, January 18-23, 2009, Daytona Beach, Florida / / edited by Sanjay Mathur, Mrityunjan Singh; volume editors, Dileep Singh, Jonathan Salem

Pubbl/distr/stampa

Hoboken, NJ, : Wiley, 2010

ISBN

9786612461460

9781282461468

128246146X

9780470584378

0470584378

9780470584361

047058436X

Descrizione fisica

1 online resource (178 p.)

Collana

Ceramic engineering and science proceedings ; ; 30/7

Altri autori (Persone)

MathurSanjay

SinghM (Mrityunjay)

SinghDilīp

SalemJ. A <1960-> (Jonathan A.)

Disciplina

620.5

Soggetti

Ceramic materials

Nanostructured materials

Lingua di pubblicazione

Inglese

Formato

Materiale a stampa

Livello bibliografico

Monografia

Note generali

Description based upon print version of record.

Nota di bibliografia

Includes bibliographical references.

Nota di contenuto

Nanostructured Materials and Nanotechnology III; Contents; Preface; Introduction; Nanowires as Building Blocks of New Devices: Present State and Prospects; Mechanistic Studies on Chemical Vapor Deposition Grown Tin Oxide Nanowires; Multifunctional Silicon Nitride Ceramic Nanocomposites Using Single-Walled Carbon Nanotubes; Simulation Based Design of Polymer Clay Nanocomposites Using Multiscale Modeling: An Overview; Preparation and Characteristic Control of Conducting Polymer/ Metal Oxide Nano-Hybrid Films for Solar Energy Conversion



Liquid Phase Morphology Control of Metal Oxides - Phase Transformation of Stand-Alone ZnO Films in Aqueous SolutionsFabrication of the Finestructured Alumina Porous Materials with Nanoimprint Method; Structure Control of the Nanotube/Nanoparticle Hydrid Materials with Sonochemical Processing; Efficient Photocatalytic Degradation of Methylene Blue with CuO Loaded Nanocrystalline TiO2; Constituent Phases of Nanosized Alumina Powders Synthesized by Pulsed Wire Discharge; The Formation of Nanostructure Compound Layer during Sulfur Plasma Nitriding and Its Mechanical Properties

Adhesion Improvement of Hard Boron Nitride Films by Insertion of Various lnterlayersProduction of Alumina Matrix Nanocomposite by Solid State Precipitation; Nanostructured Alumina Coatings Formed by a Dissolution/ Precipitation Process Using AIN Powder Hydrolysis; Synthesis of Aluminum Nitride Nanosized Powder by Pulsed Wire Discharge without Ammonia; Ductile Deformation in Alumind/Silicon Carbide Nanocomposites; Author Index

Sommario/riassunto

This useful resource will help you understand the most valuable aspects of nanostructured materials and nanotechnology. Containing 16 peer-reviewed papers, this issue covers various aspects and the latest developments related to processing, modeling and manufacturing technologies of nanoscaled materials including CNT and clay-based composites, nanowire-based sensors, new generation photovoltaic cells, plasma processing of functional thin films, ceramic membranes and self-assembled functional nanostructures.