Device modeling for analog and RF CMOS circuit design / / Trond Ytterdal, Yuhua Cheng, Tor A. Fjeldly

• Record Nr.: UNINA9911019209203321
• Autore: Ytterdal Trond
• Pubbl/distr/stampa: Hoboken, NJ, : Wiley, c2003
• ISBN: 9786610271870; 9781280271878; 1280271876; 9780470353257; 0470353252; 9780470864340; 0470864346; 9780470863800; 0470863803
• Descrizione fisica: 1 online resource (308 p.)
• Altri autori (Persone): ChengYuhua <1958->; FjeldlyTor A
• Disciplina: 621.39/5
• Soggetti: Metal oxide semiconductors, Complementary - Computer-aided design
• Lingua di pubblicazione: Inglese
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Note generali: Description based upon print version of record.
• Nota di bibliografia: Includes bibliographical references and index.
• Nota di contenuto: Device Modeling for Analog and RF CMOS Circuit Design; Contents; Preface; 1 MOSFET Device Physics and Operation; 1.1 Introduction; 1.2 The MOS Capacitor; 1.2.1 Interface Charge; 1.2.2 Threshold Voltage; 1.2.3 MOS Capacitance; 1.2.4 MOS Charge Control Model; 1.3 Basic MOSFET Operation; 1.4 Basic MOSFET Modeling; 1.4.1 Simple Charge Control Model; 1.4.2 The Meyer Model; 1.4.3 Velocity Saturation Model; 1.4.4 Capacitance Models; 1.4.5 Comparison of Basic MOSFET Models; 1.4.6 Basic Small-signal Model; 1.5 Advanced MOSFET Modeling; 1.5.1 Modeling Approach; 1.5.2 Nonideal Effects; 1.5.3 Unified MOSFET C-V ModelReferences; 2 MOSFET Fabrication; 2.1 Introduction; 2.2 Typical Planar Digital CMOS Process Flow; 2.3 RF CMOS Technology; References; 3 RF Modeling; 3.1 Introduction; 3.2 Equivalent Circuit Representation of MOS Transistors; 3.3 High-frequency Behavior of MOS Transistors and AC Small-signal Modeling; ; 3.3.1 Requirements for MOSFET Modeling for RF Applications; 3.3.2 Modeling of the Intrinsic Components; 3.3.3 HF Behavior and Modeling of the Extrinsic Components; 3.3.4 Non-quasi-static Behavior; 3.4 Model Parameter Extraction; 3.4.1 RF Measurement and De-embedding Techniques3.4.2 Parameter Extraction; 3.5 NQS Model for RF Applications; References; 4 Noise Modeling; 4.1 Noise Sources in a MOSFET; 4.2 Flicker Noise Modeling; 4.2.1 The Physical Mechanisms of Flicker Noise; 4.2.2 Flicker Noise Models; 4.2.3 Future Work in Flicker Noise Modeling; 4.3 Thermal Noise Modeling; 4.3.1 Existing Thermal Noise Models; 4.3.2 HF Noise Parameters; 4.3.3 Analytical Calculation of the Noise Parameters; 4.3.4 Simulation and Discussions; 4.3.5 Induced Gate Noise Issue; References; 5 Proper Modeling for Accurate Distortion Analysis; 5.1 Introduction5.2 Basic Terminology; 5.3 Nonlinearities in CMOS Devices and Their Modeling; 5.4 Calculation of Distortion in Analog CMOS Circuits; References; 6 The BSIM4 MOSFET Model; 6.1 An Introduction to BSIM4; 6.2 Gate Dielectric Model; 6.3 Enhanced Models for Effective DC and AC Channel Length and Width; 6.4 Threshold Voltage Model; 6.4.1 Enhanced Model for Nonuniform Lateral Doping due to Pocket (Halo) Implant; 6.4.2 Improved Models for Short-channel Effects; 6.4.3 Model for Narrow Width Effects; 6.4.4 Complete Threshold Voltage Model in BSIM4; 6.5 Channel Charge Model; 6.6 Mobility Model6.7 Source/Drain Resistance Model; 6.8 I-V Model; 6.8.1 I-V Model When rdsMod = 0 (R(DS)(V) 0); 6.8.2 I-V Model When rdsMod = 1 (R(DS)(V) = 0); 6.9 Gate Tunneling Current Model; 6.9.1 Gate-to-substrate Tunneling Current I(GB); 6.9.2 Gate-to-channel and Gate-to-S/D Currents; 6.10 Substrate Current Models; 6.10.1 Model for Substrate Current due to Impact Ionization of Channel Current; 6.10.2 Models for Gate-induced Drain Leakage (GIDL) and Gate-induced Source Leakage (GISL) Currents; 6.11 Capacitance Models; 6.11.1 Intrinsic Capacitance Models; 6.11.2 Fringing/Overlap Capacitance Models
• Sommario/riassunto: Bridges the gap between device modelling and analog circuit design.Includes dedicated software enabling actual circuit design.Covers the three significant models: BSIM3, Model 9 &, and EKV.Presents practical guidance on device development and circuit implementation.The authors offer a combination of extensive academic and industrial experience.