Handbook of self assembled semiconductor nanostructures for novel devices in photonics and electronics / / edited by Mohamed Henini

• Record Nr.: UNINA9911006887903321
• Pubbl/distr/stampa: Oxford, : Elsevier, 2008
• ISBN: 9786611795290; 9781281795298; 1281795291; 9780080560472; 0080560474
• Edizione: [1st ed.]
• Descrizione fisica: 1 online resource (862 p.)
• Classificazione: UP 3150
• Altri autori (Persone): HeniniMohamed
• Disciplina: 621.38152
• Soggetti: Nanostructured materials; Nanotechnology
• Lingua di pubblicazione: Inglese
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Note generali: Description based upon print version of record.
• Nota di bibliografia: Includes bibliographical references and index.
• Nota di contenuto: Front Cover; Handbook of Self Assembled Semiconductor Nanostructures for Novel Devices in Photonics and Electronics; Copyright Page; Contents; Preface; Chapter 1 Self-organized Quantum Dot Multilayer Structures; 1.1 Introduction; 1.2 Mechanisms for interlayer correlation formation; 1.3 Strain-field interactions in multilayer structures; 1.3.1 The isotropic point-source model; 1.3.2 The effect of elastic anisotropy; 1.3.3 Near-field strain interactions; 1.3.4 Stacking conditions and replication angles; 1.4 Comparison with experimental results; 1.4.1 Vertically aligned dots; 1.4.2 Fcc-like dot stacking1.4.3 Anticorrelated and staggered dot stackings; 1.4.4 Oblique replication on high-indexed surfaces; 1.5 Monte Carlo growth simulations; 1.6 InGaAs/GaAs multilayers; 1.6.1 Pairing probability as a function of spacer thickness; 1.6.2 Lateral ordering; 1.6.3 Sizes, shapes and critical wetting layer thickness; 1.6.4 Photoluminescence; 1.7 Ordering in SiGe/Si dot superlattices; 1.8 PbSe/PbEuTe dot superlattices; 1.8.1 Stackings as a function of spacer thickness; 1.8.2 Lateral ordering; 1.8.3 Interlayer correlations as a function of dot size; 1.8.4 Phase diagram for vertical and lateral dot ordering1.9 Other mechanisms for interlayer correlation formation; 1.9.1 Morphologic correlations; 1.9.2 Correlations induced by composition; 1.10 Summary and outlook; Acknowledgements; Chapter 2 InAs Quantum Dots on Al[sub(x)]Ga[sub(1-x)]As Surfaces and in an Al[sub(x)]Ga[sub(1-x)]As Matrix; 2.1 Introduction; 2.2 Quantum dot formation; 2.2.1 Strained heteroepitaxial growth; 2.2.2 Quantum dot nucleation on Al[sub(x)]Ga[sub(1-x)]As surfaces; 2.2.3 Calibrating InAs growth rate; 2.3 Control of quantum dot size and density; 2.3.1 QD nucleation and growth2.4 Changing the confining matrix; 2.5 Overgrowth of quantum dots; 2.5.1 QD characterization; 2.5.2 Inhomogeneous broadening of QD size; 2.6 Applications; 2.6.1 Quantum dot detectors; 2.6.2 Quantum dot quantum-cascade emitters; Chapter 3 Optical Properties of In(Ga)As/GaAs Quantum Dots for Optoelectronic Devices; 3.1 Introduction; 3.2 Growth of In(Ga)As/GaAs QDs; 3.3 Stacked QD layers; 3.4 Energy states in QDs; 3.5 Single QD spectroscopy; 3.6 Quantum dot lasers; 3.7 Vertical and resonant cavity structures; 3.8 Semiconductor optical amplifiers; 3.9 Single photon sources3.10 Entangled photon sources; 3.11 Spin-LEDs and the potential for QDs in spintronic devices; 3.12 Conclusions; Acknowledgements; Chapter 4 Cavity Quantum Electrodynamics with Semiconductor Quantum Dots; 4.1 Introduction; 4.2 Basics of cavity quantum electrodynamics; 4.2.1 Optical confinement and light-matter interaction; 4.2.2 Spontaneous emission control - Purcell effect; 4.2.3 Strong coupling regime; 4.3 Implementation of cavity quantum electrodynamics in the solid state; 4.3.1 The resonator: a semiconductor microcavity; 4.3.2 The emitter: a single semiconductor quantum dot
• Sommario/riassunto: In 1969, Leo Esaki (1973 Nobel Laureate) and Ray Tsu from IBM, USA, proposed research on "man-made crystals? using a semiconductor superlattice (a semiconductor structure comprising several alternating ultra-thin layers of semiconductor materials with different properties). This invention was perhaps the first proposal to advocate the engineering of a new semiconductor material, and triggered a wide spectrum of experimental and theoretical investigations. However, the study of what are now called low dimensional structures (LDS) began in the late 1970's when sufficiently thin epitaxial layers