Beyond oneness and difference : Li and coherence in Chinese Buddhist thought and its antecedents / / Brook Ziporyn

• Record Nr.: UNINA9910788937003321
• Autore: Ziporyn Brook <1964->
• Pubbl/distr/stampa: Albany : , : State University of New York Press, , 2013
• ISBN: 1-4619-5140-2; 1-4384-4819-8
• Descrizione fisica: 1 online resource (432 p.)
• Collana: SUNY series in Chinese philosophy and culture
• Disciplina: 181/.112
• Soggetti: Li; Philosophy, Chinese; Truth - Coherence theory
• Lingua di pubblicazione: Inglese
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Note generali: Description based upon print version of record.
• Nota di bibliografia: Includes bibliographical references and index.
• Nota di contenuto: ""Contents ""; ""Acknowledgments ""; ""Introduction: Li ç?? and Coherence: Recap of Ironies of Oneness and Difference and Terminological Clarifications""; ""Chapter One: Li ç?? as a Fundamental Category in Chinese Thought""; ""Needham and Organic Pattern ""; ""Hansen and the Mass Noun Hypothesis ""; ""Graham and the Absent Copula and Correlative Thinking ""; ""Peterson and Coherence ""; ""Hall and Ames and the Focus/Field """"Chapter Two: The Advent of Li Ironic and Non-Ironic""; ""Li as “Greatest Coherenceâ€? in the Xunzi ""; ""“Heavenly Principleâ€? (å?©ç?? tianli) Ironic and Non-Ironic in the “Inner Chaptersâ€? of the Zhuangzi and “The Record of Musicâ€?""; ""Li in the “Wingsâ€? to the Zhouyi ""; ""Li and Centrality in Dong Zhongshu (179â€?104 BCE) ""; ""Chapter Three: The Development of Li in Ironic Texts """"Li and Non-Ironic Coherence in the Later Parts of the Zhuangzi: Integrating the Non-Ironic ""; ""First Type: Li and Dao Both Non-Ironic ""; ""Second Type: Dao Ironic, Li Nonâ€?Ironic""; ""Third Type: Dao and ; Li Both Ironic ""; ""Integrating Types Two and Three ""; ""Chapter Four: The Advent of Li as a Technical Philosophical Term """"Toward the Ironic: Li in the Pre-Ironic Daoism of the Guanzi ""; ""Li Defined: The Later Two-and-a-half Chapters of the Guanzi ""; ""The Hanfeizi Commentary on the Laozi: Li as Division and the Yielding Dao ""; ""Cosmological Dao and Its Li in the Huainanzi """"Chapter Five: Li as the Convergence of Coherence and Incoherence in Wang Bi and Guo Xiang ""; ""Subjective Perspectivism in Wang Bi: The Advent of Ti and Yong ç?? as Ironic Structure""; ""Applications of the Multiplicity of Li in Wangâ€?s Laozi Commentary ""; ""Convergence of Coherence and Incoherence in Guo Xiang: Li as “Just the Way It Is"" as Limit, and as Vanishing Convergence""
• Sommario/riassunto: "Continues the author's discussion of the development of the Chinese philosophical concept Li, concluding in Song and Ming dynasty Neo-Confucianism"--Provided by publisher.

Inschriften aus Riyam / J.M. Solà Solé

• Record Nr.: UNIORUON00043280
• Autore: SOLA-SOLE, Josep M.
• Pubbl/distr/stampa: Wien, : Hermann Bohlaus, 1964 - 60 p., 16 p. di tav. ; 22 c
• Classificazione: SAE I
• Soggetti: EPIGRAFIA SUDARABICA - RIYAM
• Lingua di pubblicazione: Tedesco
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Note generali: Vorgelegt in der sitzung am 10. marz 1963

Nanoscale MOS transistors : semi-classical transport and applications / / David Esseni, Pierpaolo Palestri, and Luca Selmi

• Record Nr.: UNINA9911006806203321
• Autore: Esseni D (David)
• Pubbl/distr/stampa: Cambridge ; ; New York, : Cambridge University Press, 2011
• ISBN: 1-107-21590-0; 1-282-97823-3; 9786612978234; 0-511-93186-7; 0-511-97385-3; 0-511-92375-9; 0-511-93322-3; 0-511-92801-7; 0-511-92548-4; 0-511-93052-6
• Descrizione fisica: 1 online resource (xvii, 470 pages) : digital, PDF file(s)
• Classificazione: TEC008080
• Altri autori (Persone): PalestriP (Pierpaolo); SelmiL (Luca)
• Disciplina: 004.5/3
• Soggetti: Metal oxide semiconductors - Design and construction; Electron transport; Nanoelectronics
• Lingua di pubblicazione: Inglese
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Note generali: Title from publisher's bibliographic system (viewed on 05 Oct 2015).
• Nota di bibliografia: Includes bibliographical references and index.
• Nota di contenuto: Machine generated contents note: 1. Introduction; 2. Bulk semiconductors and the semi-classical model; 3. Quantum confined inversion layers; 4. Carrier scattering in silicon MOS transistors; 5. The Boltzmann transport equation; 6. The Monte Carlo method for the Boltzmann transport equation; 7. Simulation of bulk and SOI silicon MOSFETs; 8. MOS transistors with arbitrary crystal orientation; 9. MOS transistors with strained silicon channels; 10. MOS transistors with alternative materials; Appendix A. Mathematical definitions and properties; Appendix B. Integrals and transformations over a finite area A; Appendix C. Calculation of the equi-energy lines with the k-p ; model; Appendix D. Matrix elements beyond the envelope function approximation; Appendix E. Charge density produced by a perturbation potential.
• Sommario/riassunto: "Written from an engineering standpoint, this book provides the theoretical background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOS nanoscale transistors. A wealth of applications, illustrations and examples connect the methods described to all the latest issues in nanoscale MOSFET design. Key areas covered include: Transport in arbitrary crystal orientations and strain conditions, and new channel and gate stack materials All the relevant transport regimes, ranging from low field mobility to quasi-ballistic transport, described using a single modeling framework Predictive capabilities of device models, discussed with systematic comparisons to experimental results"--; "The traditional geometrical scaling of the CMOS technologies has recently evolved in a generalized scaling scenario where material innovations for different intrinsic regions of MOS transistors as well as new device architectures are considered as the main routes toward further performance improvements. In this regard, high-? dielectrics are used to reduce the gate leakage with respect to the SiO2 for a given drive capacitance, while the on-current of the MOS transistors is improved by using strained silicon and possibly with the introduction of alternative channel materials. Moreover, the ultra-thin body Silicon-On-Insulator (SOI) device architecture shows an excellent scalability even with a very lightly doped silicon film, while non-planar FinFETs are also of particular interest, because they are a viable way to obtain double-gate SOI MOSFETs and to realize in the same fabrication process n-MOS and p-MOS devices with different crystal orientations"--