Growing and Forming of Semiconductor Layers

• Record Nr.: UNINA9911006708903321
• Autore: Riccio Michele
• Pubbl/distr/stampa: Zurich : , : Trans Tech Publications, Limited, , 2024; ©2024
• ISBN: 9783036416311; 3036416315
• Edizione: [1st ed.]
• Descrizione fisica: 1 online resource (107 pages)
• Collana: Solid State Phenomena, , 1662-9779 ; ; Volume 362
• Altri autori (Persone): IraceAndrea; BreglioGiovanni
• Soggetti: Silicon carbide; Gallium nitride
• Lingua di pubblicazione: Inglese
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Nota di contenuto: Intro -- Growing and Forming of Semiconductor Layers -- Preface -- Table of Contents -- Polarity Effect on the Heteroepitaxial Growth of BxC on 4H-SiC by CVD -- Vertical Current Transport in Monolayer MoS2 Heterojunctions with 4H-SiC Fabricated by Sulfurization of Ultra-Thin MoOx Films -- Estimation of Influence on Carbon Vacancy Regarding 4H-SiC Substrate Grown by HTCVD Method -- Resistivity as a Witness of Local Crystal Growth Conditions -- GaN Cap UV Spectroscopy Assessment in AlGaN/GaN HEMT -- SNDM Study of the MOS Interface State Densities on the 3C-SiC / 4H-SiC Stacked Structure -- Development of 200mm SiC Technology - Epitaxial Thickness Uniformity Observation on Different 8 Inch 4H-SiC Substrates -- 4H-SiC Crystal Growth Using Recycled SiC Powder Source -- High-Quality SiC Crystal Growth by Temperature Gradient Control at Initial Growth Stage -- The Role of Air-Pocket in Crucible Structure for High Quality SiC Crystal Growth -- Influence of the Size Distribution of the SiC Powder Source on the Shape of the Crystal Growth Interface during PVT Growth of 4H-SiC Boules -- Confirmation of the Growth Mechanism of the Buffer Layer in Epitaxial Graphene on SiC -- Suppressing the Memory Effect in Al Doped 3C-SiC Grown Using Chlorinated Chemistry -- Investigations into the Impact of Deposition or Growth Techniques ; on the Field Oxide TID Response for 4H-SiC Space Applications -- Characterization of Growth Sectors in Gallium Nitride Substrate Wafers -- Doping Efficiency and Long-Term Stability of Various SiC Epitaxial Reactors and Process Chemistries -- Keyword Index -- Author Index.
• Sommario/riassunto: Special topic volume with invited peer-reviewed papers only.