Nanotechnology for microelectronics and optoelectronics / / J.M. Martinez-Duart, R.J. Martin-Palma, F. Agullo-Rueda

• Record Nr.: UNINA9911004696503321
• Autore: Martinez-Duart J. M
• Pubbl/distr/stampa: Amsterdam, : Elsevier, c2006
• ISBN: 1-280-62168-0; 9786610621682; 0-08-045695-2
• Edizione: [1st ed.]
• Descrizione fisica: 1 online resource (302 p.)
• Collana: European Materials Research Society Series
• Altri autori (Persone): Martin-PalmaR. J; Agullo-RuedaFernando
• Disciplina: 621.381
• Soggetti: Optoelectronics; Microelectronics; Nanotechnology
• Lingua di pubblicazione: Inglese
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Note generali: Description based upon print version of record.
• Nota di bibliografia: Includes bibliographical references and index.
• Nota di contenuto: NANOTECHNOLOGY FOR MICROELECTRONICS AND OPTOELECTRONICS; NANOTECHNOLOGY FOR MICROELECTRONICS AND OPTOELECTRONICS; Preface; About the Authors; Acknowledgements; Structure of the Book; CONTENTS; Chapter 1 Mesoscopic Physics and Nanotechnologies; 1.1. OUTLOOK OF THE BOOK; 1.2. TRENDS IN NANOELECTRONICS AND OPTOELECTRONICS; 1.3. CHARACTERISTIC LENGTHS IN MESOSCOPIC SYSTEMS; 1.4. QUANTUM MECHANICAL COHERENCE; 1.5. QUANTUM WELLS, WIRES, AND DOTS; 1.6. DENSITY OF STATES AND DIMENSIONALITY; 1.7. SEMICONDUCTOR HETEROSTRUCTURES; 1.8. QUANTUM TRANSPORT; REFERENCES; FURTHER READING; PROBLEMS; Chapter 2 Survey of Solid State Physics2.1. INTRODUCTION; 2.2. SHORT REVIEW OF QUANTUM MECHANICS; 2.3. FREE ELECTRON MODEL OF A SOLID. DENSITY OF STATES FUNCTION; 2.4. BLOCH THEOREM; 2.5. ELECTRONS IN CRYSTALLINE SOLIDS; 2.6. DYNAMICS OF ELECTRONS IN BANDS; 2.7. LATTICE VIBRATIONS; 2.8. PHONONS; REFERENCES; FURTHER READING; PROBLEMS; Chapter 3 Review of Semiconductor Physics; 3.1. INTRODUCTION; 3.2. ENERGY BANDS IN TYPICAL SEMICONDUCTORS; 3.3. INTRINSIC AND EXTRINSIC SEMICONDUCTORS; ; 3.4. ELECTRON AND HOLE CONCENTRATIONS IN SEMICONDUCTORS; 3.5. ELEMENTARY TRANSPORT IN SEMICONDUCTORS; 3.6. DEGENERATE SEMICONDUCTORS3.7. OPTICAL PROPERTIES OF SEMICONDUCTORS; REFERENCES; FURTHER READING; PROBLEMS; Chapter 4 The Physics of Low-Dimensional Semiconductors; 4.1. INTRODUCTION; 4.2. BASIC PROPERTIES OF TWO-DIMENSIONAL SEMICONDUCTOR NANOSTRUCTURES; 4.3. SQUARE QUANTUM WELL OF FINITE DEPTH; 4.4. PARABOLIC AND TRIANGULAR QUANTUM WELLS; 4.5. QUANTUM WIRES; 4.6. QUANTUM DOTS; 4.7. STRAINED LAYERS; 4.8. EFFECT OF STRAIN ON VALENCE BANDS; 4.9. BAND STRUCTURE IN QUANTUM WELLS; 4.10. EXCITONIC EFFECTS IN QUANTUM WELLS; REFERENCES; FURTHER READING; PROBLEMS; Chapter 5 Semiconductor Quantum Nanostructures and Superlattices5.1. INTRODUCTION; 5.2. MOSFET STRUCTURES; 5.3. HETEROJUNCTIONS; 5.4. QUANTUM WELLS; 5.5. SUPERLATTICES; REFERENCES; FURTHER READING; PROBLEMS; Chapter 6 Electric Field Transport in Nanostructures; 6.1. INTRODUCTION; 6.2. PARALLEL TRANSPORT; 6.3. PERPENDICULAR TRANSPORT; 6.4. QUANTUM TRANSPORT IN NANOSTRUCTURES; REFERENCES; FURTHER READING; PROBLEMS; Chapter 7 Transport in Magnetic Fields and the Quantum Hall Effect; 7.1. INTRODUCTION; 7.2. EFFECT OF A MAGNETIC FIELD ON A CRYSTAL; 7.3. LOW-DIMENSIONAL SYSTEMS IN MAGNETIC FIELDS; 7.4. DENSITY OF STATES OF A 2D SYSTEM IN A MAGNETIC FIELD7.5. THE AHARONOV-BOHM EFFECT; 7.6. THE SHUBNIKOV-DE HAAS EFFECT; 7.7. THE QUANTUM HALL EFFECT; REFERENCES; FURTHER READING; PROBLEMS; Chapter 8 Optical and Electro-optical Processes in Quantum Heterostructures; 8.1. INTRODUCTION; 8.2. OPTICAL PROPERTIES OF QUANTUM WELLS AND SUPERLATTICES; 8.3. OPTICAL PROPERTIES OF QUANTUM DOTS AND NANOCRYSTALS; 8.4. ELECTRO-OPTICAL EFFECTS IN QUANTUM WELLS. QUANTUM CONFINED STARK EFFECT; 8.5. ELECTRO-OPTICAL EFFECTS IN SUPERLATTICES. STARK LADDERS AND BLOCH OSCILLATIONS; REFERENCES; FURTHER READING; PROBLEMS
• Sommario/riassunto: When solids are reduced to the nanometer scale, they exibit new and exciting behaviours which constitute the basis for a new generation of electronic devices. Nanotechnology for Microelectronics and Optoelectronics outlines in detail the fundamental solid-state physics concepts that explain the new properties of matter caused by this reduction of solids to the nanometer scale. Applications of these electronic properties is also explored, helping students and researchers to appreciate the current status and future potential of nanotechnology as applied to the electronics industry