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Record Nr. |
UNINA9911003588303321 |
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Autore |
Baliga B. Jayant |
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Titolo |
The BaSIC topology : a revolutionary power device control strategy / / B. Jayant Baliga, Ajit Kanale |
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Pubbl/distr/stampa |
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Cham : , : Springer, , [2025] |
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©2025 |
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ISBN |
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Descrizione fisica |
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1 online resource (xxii, 316 pages) : illustrations |
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Disciplina |
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Soggetti |
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Power semiconductors |
Electric power production |
Power electronics |
Electronic circuits |
Electronics |
Power Electronics |
Electronic Circuits and Systems |
Electronics and Microelectronics, Instrumentation |
Electrical Power Engineering |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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Nota di bibliografia |
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Includes bibliographical references and index. |
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Nota di contenuto |
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Introduction -- Short-circuit withstand capability -- Conventional current sensing in devices -- The BaSIC topology concept -- Application of the BaSIC Topology to Si IGBTs -- Application of the BaSIC Topology to SiC Power MOSFETs -- Application of the BaSIC Topology to GaN HEMT devices -- Current Sensing using the BaSIC Topology -- Eliminating repetitive short-circuit failure using the BaSIC Topology -- Avalanche ruggedness of the BaSIC Topology to GaN HEMT devices -- Optimization of Silicon Depletion-Mode MOSFETs for the BaSIC Topology -- Selection Methodology for Silicon Enhancement-Mode MOSFETs for the BaSIC Topology -- Comparison of the BaSIC Topology to the conventional DESAT topology -- Synopsys. |
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Sommario/riassunto |
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The BaSIC topology is a revolutionary method for controlling power semiconductor devices. It enables monitoring the current flow through |
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the devices while providing a unique current limiting capability that enhances their short-circuit withstand capability. The book describes the BaSIC topology concept and contrasts it with previous approaches. It provides an extensive description of the application of the BaSIC topology to silicon IGBTs, silicon carbide power MOSFETs, and GaN HEMT devices. The ability to extend the short-circuit withstand time to over 10 ms for SiC power MOSFETs has been achieved for the first time with the BaSIC topology. The BaSIC topology is the only approach shown to eliminate the failure of these devices under repetitive short-circuit events. The sensing of current in paralleled devices is demonstrated, eliminating the need for external sensors. The BaSIC topology has utility for various power electronics applications, including electric vehicles and industrial motor drives. Introduces the BaSIC topology – a revolutionary new approach for the control of power devices; Describes the application of the BaSIC topology to silicon IGBTs, silicon carbide power MOSFETs, and GaN HEMT devices; Written by the inventor of the insulated-gate bipolar transistor (IGBT) and the BaSIC topology concept. |
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