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Record Nr. |
UNINA9910809272103321 |
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Titolo |
Defects-recognition, imaging and physics in semiconductors XIV : selected, peer reviewed papers from the 14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, September 25-29, 2011. Miyazaki, Japan / / edited by Hiroshi Yamada-Kaneta and Akira Sakai |
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Pubbl/distr/stampa |
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Durnten-Zurich ; ; Enfield, NH : , : Trans Tech Publications, , [2012] |
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©2012 |
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ISBN |
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Descrizione fisica |
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1 online resource (300 p.) |
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Collana |
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Materials science forum ; ; vol. 725 |
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Altri autori (Persone) |
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Yamada-KanetaHiroshi |
SakaiAkira (Professor of engineering science) |
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Disciplina |
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Soggetti |
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Semiconductors - Defects |
Physics |
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Lingua di pubblicazione |
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Materiale a stampa |
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Livello bibliografico |
Monografia |
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Note generali |
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Description based upon print version of record. |
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Nota di contenuto |
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Defects-Recognition, Imaging and Physics in Semiconductors XIV; Preface, Message and Committee; Table of Contents; Chapter 1: Defects in SiC; Imaging and Strain Analysis of Threading-Edge and Basal-Plane Dislocations in 4H-SiC Using X-Ray Three-Dimensional Topography; Threading Dislocations in 4H-SiC Observed by Double-Crystal X-Ray Topography; Characterization of Dislocation Structures in Hexagonal SiC by Transmission Electron Microscopy; Photoluminescence Imaging and Wavelength Analysis of Basal Plane Frank-Type Defects in 4H-SiC Epilayers |
Formation of Nanovoids in Femtosecond Laser-Irradiated Single Crystals of Silicon CarbideElectron Beam Induced Current Observation of Dislocations in 4H-SiC Introduced by Mechanical Polishing; Basal Plane Dislocations in 4H-SiC Epilayers with Different Dopings; Frank Partial Dislocation in 4H-SiC Epitaxial Layer by MSE Method; Separation of the Driving Force and Radiation-Enhanced Dislocation Glide in 4H-SiC; Study of Defects Generated by Standard- and Plasma-Implantation of Nitrogen Atoms in 4H-SiC Epitaxial Layers |
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Different Dissociation Behavior of [11-20] and Non-[11-20] Basal Plane Dislocations in 4H-SiС under Electron Beam IrradiationDensity of Etch Pits on C-Face 4H-SiC Surface Produced by ClF3 Gas; Defect Related Leakage Current Components in SiC Schottky Barrier Diode; Rapid Terahertz Imaging of Carrier Density of 3C-SiC; Chapter 2: Nitride Materials and Devices; Cathodoluminescence Study of Ammonothermal GaN Crystals; The Effect of the Indenter Orientation on the Formation of Dislocations and Cracks in (0001) GaN Bulk Crystals; Defect Propagation from 3C-SiC to III-Nitride |
Characterization of Dislocations in GaN Thin Film and GaN/AlN MultilayerMicroscopic Degradation Analysis of RF-Stressed AlGaN/GaN HEMTs; Chapter 3: III-V Compounds and Devices; Distribution of Misfit Dislocations at the InGaAs/GaAs(001) Interface Observed by Monochromatic X-Ray Topography; Effects of in Content on Anisotropies in Strain Relaxation Processes of InGaAs/GaAs (001) Measured by Real-Time Three-Dimensional Reciprocal Space Mapping; Nitrogen Related Deep Levels in GaAsN Films Investigated by a Temperature Dependence of Piezoelectric Photothermal Signal |
Intermixing in InP-Based Quantum Well Photonic Structures Induced by the Dry-Etching Process: A Spectral Imaging Cathodoluminescence StudyDefect Propagation in Broad-Area Diode Lasers; Kinetics of Defect Propagation during the Catastrophic Optical Damage (COD) in Broad-Area Diode Lasers; Nondestructive Measurement of Carrier Density in GaAs Using Relative Reflectivity of Two Terahertz Waves; Chapter 4: Photovoltaics: From Material to Module; Lock-In Thermography and Related Topics in Photovoltaic Research |
EBIC Study on Metal Contamination at Intra Grain Defects in Multicrystalline Silicon for Solar Cells |
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Sommario/riassunto |
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This volume documents the latest understanding of many topics of current interest in the science and technology of defects in semiconductors. The investigation of defects in semiconductors is a little different to that in other fields of materials science: in order to observe defects in semiconductors and elucidate their physical nature, a very wide range of tools and techniques has been introduced or created; thanks to the inventive ideas of the researchers. This work clearly reflects the lively state of defect investigation in semiconductors. Review from Book News Inc.: Drawn from papers del |
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2. |
Record Nr. |
UNINA9910999495103321 |
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Autore |
De Core, Francesco |
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Titolo |
Silone, un alfabeto / Francesco De Core ; Ottorino Gurgo |
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Pubbl/distr/stampa |
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Napoli, : L'ancora del Mediterraneo, 2003 |
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ISBN |
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Descrizione fisica |
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Collana |
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Altri autori (Persone) |
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Locazione |
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Collocazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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