Half-metallic materials and their properties / / C.Y. Fong, J.E. Pask & L.H. Yang

• Record Nr.: UNINA9910993977603321
• Autore: Fong C. Y (Ching-yao)
• Pubbl/distr/stampa: London, UK, : Imperial College Press; Singapore, : Dist. by World Scientific, 2013; London : , : Imperial College Press, , [2013]; �2013
• ISBN: 9781299462151; 1299462154; 9781908977137; 1908977132; 9781908977120
• Edizione: [1st ed.]
• Descrizione fisica: 1 online resource (304 pages)
• Collana: Materials for engineering ; ; v. 2
• Altri autori (Persone): PaskJ. E; YangL. H
• Disciplina: 620.16
• Soggetti: Metallic composites; Metals
• Lingua di pubblicazione: Inglese
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Note generali: Description based upon print version of record.
• Nota di bibliografia: Includes bibliographical references and index.
• Nota di contenuto: Intro -- Contents -- Preface -- Acknowledgments -- 1. Introduction -- 1.1 Background -- 1.2 Classes of Half-metals -- 1.3 Half-metallic Devices -- 2. Methods of Studying Half-metals -- 2.1 Introduction -- 2.2 Molecular BeamEpitaxy (MBE) -- 2.2.1. Schematic setup -- 2.2.2. Issues concerning growth -- 2.2.2.1. Substrate for Heusler alloys -- 2.2.2.2. Substrate for HMs with ZB structure -- 2.2.2.3. Temperature -- 2.3 Characterization of Samples -- 2.3.1. Reflection high-energy electron diffraction (RHEED) -- 2.3.1.1. Basic information -- 2.3.1.2. What is measured -- 2.3.2. X-ray reflectometry (XRR) -- 2.3.2.1. Basic information -- 2.3.2.2. Schematic setup -- 2.3.2.3. What is measured -- 2.3.3. Scanning tunneling microscopy (STM) -- 2.3.3.1. Basic information -- 2.3.3.2. What is measured -- 2.3.4. Auger electron spectroscopy (AES) -- 2.3.4.1. Basic processes -- 2.3.4.2. Simplified ; experimental setup -- 2.3.4.3. What is measured -- 2.3.4.4. Remarks -- 2.4 Methods of Determining Physical Properties -- 2.4.1. Magnetic properties -- 2.4.1.1. SQUID-based magnetometer -- 2.4.1.2. Magneto-optical Kerr effect (MOKE) -- 2.4.1.3. X-ray magnetic circular dichroism (XMCD) -- 2.4.2. Transport properties -- 2.4.2.1. Magnetic tunnel junctions (MTJs) -- 2.4.2.2. Resistivity -- 2.4.2.3. Hall conductivity -- 2.4.3. Half-metallic properties -- 2.4.3.1. Spin-polarized angle-resolved photoemission spectroscopy (ARPES) -- 2.4.3.2. Ferromagnet-superconductor tunneling -- 2.4.3.3. Andreev reflection -- 2.4.3.4. Curie temperature TC -- 2.5 TheoreticalMethods -- 2.5.1. Density functional theory (DFT) -- 2.5.1.1. Hohenberg-Kohn theorem I -- 2.5.1.2. Hohenberg-Kohn theorem II -- 2.5.2. Kohn-Sham equations -- 2.5.2.1. Local density approximation (LDA) -- 2.5.2.2. Spin-polarized Kohn-Sham equations -- 2.5.2.3. Generalized gradient approximation (GGA).; 2.5.3. Methods of calculating electronic properties -- 2.5.3.1. Linearized augmented plane wave (LAPW) method -- 2.5.3.2. Korringa-Kohn-Rostoker (KKR) method -- 2.5.3.3. Pseudopotential method -- 2.5.3.4. LDA+U -- 2.5.4. Methods of calculating Curie temperature TC -- 2.5.4.1. Determination of the dominant excitation -- 2.5.4.2. Basic idea -- 2.5.4.3. Comments on practical calculations -- 3. Heusler Alloys -- 3.1 Introduction -- 3.2 Half-Heusler and Full-Heusler Alloys -- 3.3 Methods of Growing Heusler Alloys -- 3.3.1. Bulk Heusler alloys -- 3.3.1.1. Arc-melting method -- 3.3.1.2. Tri-arc Czochralski method -- 3.3.2. Thin films -- 3.3.2.1. MBE method -- 3.3.2.2. Radio frequency magnetron sputtering method -- 3.3.2.3. Pulsed laser deposition (PLD) -- 3.4 Characterization of Heusler Alloys -- 3.4.1. Bulk Heusler alloys -- 3.4.2. Thin films -- 3.4.2.1. Auger electron spectroscopy (AES) -- 3.4.2.2. Low-energy electron diffraction (LEED) -- 3.5 Physical Properties of Bulk Heusler Alloys -- 3.5.1. Magnetic moments and the Slater-Pauling rule -- 3.5.2. Insulating gap in half-metallic Heusler alloys -- 3.5.2.1. Half-Heusler alloys -- 3.5.2.2. Full-Heusler alloys -- 3.5.3. Polarization at EF -- 3.5.4. Magnetic moments -- 3.5.5. Curie temperature TC -- 3.5.6. Other magnetic properties -- 3.5.7. Disorder in Heusler alloys -- 3.5.7.1. Experimental probes -- 3.5.7.2. Theoretical investigations of disorder -- 3.6 Physical Properties of Heusler Alloys in Thin-film Form -- 3.6.1. NiMnSb -- 3.6.1.1. Stability of structure and half-metallicity -- 3.6.1.2. Spin polarization -- 3.6.1.3. Surface and interface effects -- 3.6.2. Co2MnSi -- 3.6.2.1. Growth in thin-.lm form -- 3.6.2.2. Magnetic properties -- 3.6.2.3. Transport properties -- 3.6.3. Co2FeSi -- 3.6.3.1. Growth in thin-film form -- 3.6.3.2. Characterizations -- 3.6.3.3. Magnetic properties.; 3.6.3.4. Transport properties -- 4. Half-Metallic Oxides -- 4.1 Introduction -- 4.2 CrO2 -- 4.2.1. Structure -- 4.2.2. Growth -- 4.2.2.1. Thermal decomposition -- 4.2.2.2. Chemical vapor deposition (CVD) -- 4.2.3. Characterization -- 4.2.3.1. Reflection high-energy electron diffraction (RHEED) -- 4.2.3.2. X-ray diffraction (XRD) -- 4.2.3.3. Atomic force microscopy (AFM) -- 4.2.4. Transport properties -- 4.2.4.1. Point contacts and powder magnetoresistance (PMR) -- 4.2.4.2. Magnetization and magnetoresistance vs. applied external field -- 4.2.5. Half-metallic properties -- 4.2.5.1. Point-contact Andreev reflection (PCAR) -- 4.2.6. Electronic properties -- 4.2.6.1. Spin-polarized angle-resolved photoemission spectroscopy (ARPES) -- 4.2.7. Magnetic properties -- 4.2.7.1. Curie temperature TC -- 4.2.7.2. Saturation magnetic moment -- 4.2.7.3. Hysteresis loops -- 4.2.8. Theoretical studies of electronic and magnetic properties -- 4.2.8.1. Electronic properties -- 4.2.8.2. Magnetic properties -- 4.3 Fe3O4 -- 4.3.1. Structure -- 4.3.2. Growth -- 4.3.2.1. Single-crystal growth -- ; 4.3.2.2. Thin-film growth -- 4.3.3. Characterization -- 4.3.3.1. Si substrate -- 4.3.3.2. TiN buffer layer -- 4.3.3.3. Fe3O4 film -- 4.3.4. Physical properties -- 4.3.4.1. Half-metallic properties -- 4.3.4.2. Magnetic properties -- 4.3.4.3. Charge ordering -- 4.3.4.4. Surface properties -- 4.3.5. One-electron theory -- 4.3.5.1. Spin-polarized band structure and DOS -- 4.3.5.2. Non-spin-polarized band structure and Stoner model -- 4.3.5.3. Local spin density approximation with and without U -- 4.4 La1-x(Sr, Ca, Ba)xMnO3 -- 4.4.1. Structure -- 4.4.2. Growth and characterization -- 4.4.3. Physical properties -- 4.4.3.1. Half-metallicity -- 4.4.3.2. Magnetic and transport properties -- 4.5 Magnetic Interactions in the Oxides -- 4.5.1. Superexchange -- 4.5.1.1. Model approach.; 4.5.1.2. First-principles approach -- 4.5.2. Double exchange -- 4.5.3. Magnetism in CrO2 and Fe3O4 -- 4.5.3.1. CrO2 -- 4.5.3.2. Fe3O4 -- 5. Half-metals with Simple Structures -- 5.1 Introduction -- 5.2 Half-metals with Zincblende Structure -- 5.2.1. Experiment -- 5.2.1.1. Growth -- 5.2.1.2. Characterization using X-rays -- 5.2.1.3. Magnetic properties -- 5.2.2. Theory -- 5.2.2.1. MnAs -- 5.2.2.2. MnC -- 5.2.2.3. Qualitative explanation of magnetic moments -- 5.3 Half-metallic Superlattices -- 5.3.1. CrAs/MnAs superlattices -- 5.3.2. Superlattice showing spin-polarized ballistic transport -- 5.4 QuantumDots -- 5.4.1. Experiment -- 5.4.1.1. MnAs quantum dots -- 5.4.2. Theory -- 5.4.2.1. MnAs quantum dot -- 5.5 Digital Ferromagnetic Heterostructures -- 5.5.1. Experiment -- 5.5.1.1. Growth and characterization of (Ga,Mn)As-DFH -- 5.5.1.2. Growth and characterization of (Ga,Mn)Sb-DFH -- 5.5.1.3. Physical properties of (Ga,Mn)As-DFH -- 5.5.2. Theory -- 5.5.2.1. GaAs-based DFH -- 5.5.2.2. Si-based DFH -- 5.6 One-dimensional Half-metals -- Appendix A Anisotropic Magnetoresistance -- Bibliography -- Index.
• Sommario/riassunto: This volume provides a detailed treatment of half-metallic materials and their properties from both an experimental and theoretical point of view. It discusses the methods used to understand and predict the properties of half-metals and the gamut of other materials amenable to these techniques. It also offers an expansive bibliography to facilitate further and deeper research. This book provides the precise definitions of all key terminology used in the vast and varied literature.This is the first comprehensive monograph on the subject and will serve as a starting point for graduate students a