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1. |
Record Nr. |
UNISA990001755720203316 |
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Autore |
LODOLINI, Elio |
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Titolo |
Gli archivi notarili delle Marche / Elio Lodolini |
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Pubbl/distr/stampa |
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Descrizione fisica |
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Collana |
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Fonti e studi del Corpus membranarum Italicarum ; 3 |
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Disciplina |
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Soggetti |
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Archivi notarili - Marche - Censimenti |
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Collocazione |
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I.3. Coll. 6/ 5 (XI B coll 12/3) |
FC M 1658 |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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Note generali |
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In appendice: Elenco dei Prefetti e Presidenti degli archivi dal 1592 al 1870 |
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2. |
Record Nr. |
UNINA9910830087103321 |
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Autore |
Adachi Sadao <1950-> |
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Titolo |
Properties of group-IV, III-V and II-VI semiconductors [[electronic resource] /] / Sadao Adachi |
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Pubbl/distr/stampa |
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Chichester, England ; ; Hoboken, NJ, : John Wiley & Sons, c2005 |
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ISBN |
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1-280-26896-4 |
9786610268962 |
0-470-09034-0 |
0-470-09033-2 |
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Descrizione fisica |
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1 online resource (407 p.) |
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Collana |
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Wiley series in materials for electronic and optoelectronic applications |
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Disciplina |
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Soggetti |
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Semiconductors - Materials |
Semiconductors - Analysis |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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Note generali |
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Description based upon print version of record. |
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Nota di bibliografia |
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Includes bibliographical references and index. |
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Nota di contenuto |
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Properties of Group-IV, III-V and II-VI Semiconductors; Contents; Series Preface; Preface; Acknowledgments/Dedication; 1 Structural Properties; 1.1 Ionicity; 1.1.1 Definition; (a) Phillips ionicity; (b) Pauling ionicity; (c) Harrison ionicity; 1.1.2 Ionicity Value; 1.2 Elemental Isotopic Abundance and Molecular Weight; 1.2.1 Elemental Isotopic Abundance; 1.2.2 Molecular Weight; 1.3 Crystal Structure and Space Group; 1.3.1 Crystal Structure; (a) Diamond, zinc-blende and wurtzite structures; (b) Hexagonal and rhombohedral structures; (c) Rocksalt structure; 1.3.2 Space Group |
1.4 Lattice Constant and Related Parameters1.4.1 Lattice Constant; (a) Room-temperature value; (b) Near-neighbor distance; (c) External perturbation effect; 1.4.2 Molecular and Crystal Densities; 1.5 Structural Phase Transitions; 1.6 Cleavage; 1.6.1 Cleavage Plane; 1.6.2 Surface Energy; (a) Theoretical value; (b) Experimental value; References; 2 Thermal Properties; 2.1 Melting Point and Related Parameters; 2.1.1 Phase Diagram; 2.1.2 Melting Point; 2.2 Specific Heat; 2.3 Debye Temperature; 2.4 Thermal Expansion Coefficient; 2.5 Thermal Conductivity and Diffusivity; 2.5.1 Thermal Conductivity |
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2.5.2 Thermal DiffusivityReferences; 3 Elastic Properties; 3.1 Elastic Constant; 3.1.1 General Remarks; 3.1.2 Room-temperature Value; 3.1.3 External Perturbation Effect; (a) Temperature effect; (b) Pressure effect; 3.2 Third-order Elastic Constant; 3.3 Young's Modulus, Poisson's Ratio and Similar Properties; 3.3.1 Young's Modulus and Poisson's Ratio: Cubic Lattice; 3.3.2 Bulk Modulus, Shear Modulus and Similar Properties: Cubic Lattice; 3.3.3 Young's Modulus and Poisson's Ratio: Hexagonal Lattice; 3.3.4 Bulk Modulus, Shear Modulus and Similar Properties: Hexagonal Lattice; 3.4 Microhardness |
3.5 Sound VelocityReferences; 4 Lattice Dynamic Properties; 4.1 Phonon Dispersion Relation; 4.1.1 Brillouin Zone; (a) Face-centered cubic lattice; (b) Hexagonal lattice; (c) Rhombohedral lattice; 4.1.2 Phonon Dispersion Curve; (a) Cubic lattice; (b) Hexagonal lattice; 4.1.3 Phonon Density of States; 4.2 Phonon Frequency; 4.2.1 Room-temperature Value; 4.2.2 External Perturbation Effect; (a) Temperature effect; (b) Pressure effect; 4.3 Mode Grüneisen Parameter; 4.4 Phonon Deformation Potential; 4.4.1 Cubic Lattice; 4.4.2 Hexagonal Lattice; References |
5 Collective Effects and Some Response Characteristics5.1 Piezoelectric and Electromechanical Constants; 5.1.1 Piezoelectric Constant; (a) Piezoelectric stress constant; (b) Piezoelectric strain constant; 5.1.2 Electromechanical Coupling Constant; 5.2 Fröhlich Coupling Constant; References; 6 Energy-band Structure: Energy-band Gaps; 6.1 Basic Properties; 6.1.1 Energy-band Structure; (a) Diamond-type semiconductor; (b) Zinc-blende-type semiconductor; (c) Wurtzite-type semiconductor; 6.1.2 Electronic Density of States; 6.2 E(0)-gap Region; 6.2.1 Effective G-point Hamiltonian |
6.2.2 Room-temperature Value |
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Sommario/riassunto |
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Almost all the semiconductors of practical interest are the group-IV, III-V and II-VI semiconductors and the range of technical applications of such semiconductors is extremely wide.The purpose of this book is twofold:* to discuss the key properties of the group-IV, III-V and II-VI semiconductors* to systemize these properties from a solid-state physics aspectThe majority of the text is devoted to the description of the lattice structural, thermal, elastic, lattice dynamic, electronic energy-band structural, optical and carrier transport properties of these semiconductors. Some |
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3. |
Record Nr. |
UNINA9910992778603321 |
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Autore |
Gupta R (Rajan) |
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Titolo |
Generative AI: Techniques, Models and Applications / / by Rajan Gupta, Sanju Tiwari, Poonam Chaudhary |
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Pubbl/distr/stampa |
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Cham : , : Springer Nature Switzerland : , : Imprint : Springer, , 2025 |
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ISBN |
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Edizione |
[1st ed. 2025.] |
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Descrizione fisica |
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1 online resource (XXV, 242 p. 25 illus., 16 illus. in color.) |
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Collana |
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Lecture Notes on Data Engineering and Communications Technologies, , 2367-4520 ; ; 241 |
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Disciplina |
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Soggetti |
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Computational intelligence |
Engineering - Data processing |
Artificial intelligence |
Computational Intelligence |
Data Engineering |
Artificial Intelligence |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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Nota di contenuto |
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Introduction to Artificial Intelligence -- Computational Foundation of Generative AI Models -- Generative AI Techniques and Models -- Foundation Models -- Large Language Models -- Large Generative Models for Different Data Types -- Prompt Engineering -- Applications of Generative AI Models -- Ethics, Governance, Security and Privacy -- Fairness and Biases in Generative AI. |
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Sommario/riassunto |
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This book unlocks the full potential of modern AI systems through a meticulously structured exploration of concepts, techniques, and practical applications. This comprehensive book bridges theoretical foundations with real-world implementations, offering readers a unique perspective on the rapidly evolving field of generative technologies. From computational foundations to ethical considerations, the book systematically covers essential topics including foundation models, large-scale architectures, prompt engineering, and practical applications. The content seamlessly integrates complex technical concepts with industry-relevant examples, making it an invaluable resource for researchers, |
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academicians, and practitioners. Distinguished by its balanced approach to theory and practice, this book serves as both a learning tool and reference guide. Readers will benefit from: Clear explanations of advanced concepts. Practical implementation insights. Current industry applications. Ethical framework discussions. Whether you're conducting research, implementing solutions, or exploring the field, this book provides the knowledge necessary to understand and apply generative AI technologies effectively while considering crucial aspects of security, privacy, and fairness. |
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