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Record Nr. |
UNINA9910988290503321 |
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Autore |
Xu Ke |
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Titolo |
Growth and Application of AlN Single Crystal / / by Ke Xu, Jun Huang |
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Pubbl/distr/stampa |
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Singapore : , : Springer Nature Singapore : , : Imprint : Springer, , 2025 |
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ISBN |
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Edizione |
[1st ed. 2025.] |
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Descrizione fisica |
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1 online resource (X, 177 p. 167 illus., 122 illus. in color.) |
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Collana |
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Wide Bandgap Semiconductors, , 2948-2615 |
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Disciplina |
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Soggetti |
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Solid state physics |
Semiconductors |
Electronics |
Electronic Devices |
Electronics and Microelectronics, Instrumentation |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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Nota di contenuto |
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Basic Properties of Ain Single Crystal -- Physical Basis for the Growth of Ain Single Crystal -- Defects in Ain Single Crystal -- Growth of Ain Bulk Crystal by Physical Vapor Transport -- Growth of Thick Ain Layers by Hydride Vapor Phase Epitaxy -- Growth of Thin Ain Layers by Metal Organic Chemical Vapor Deposition -- Aluminium Nitride based Semiconductor Devices. |
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Sommario/riassunto |
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This book covers the rapidly developing field of AlN research and some of its technical applications. In this book, the development of aluminium nitride from single crystal growth to device applications is comprehensively presented. Single crystal AlN growth includes bulk single crystal growth, single crystal thick film growth and single crystal thin film growth involving physical vapor deposition technology, hydride vapor phase epitaxy and metal-organic chemical vapor deposition technology. In terms of devices, AlN basic UV LED and power electronics devices are discussed. This book can provide researchers, engineers and graduate students with a wealth of new discoveries, results, information and knowledge in the field of AlN single crystal materials. |
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