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1. |
Record Nr. |
UNINA9910957904603321 |
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Titolo |
Language disorders in speakers of Chinese / / edited by Sam-Po Law, Brendan S. Weekes and Anita M-Y. Wong |
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Pubbl/distr/stampa |
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Bristol, UK ; ; Buffalo, NY, : Multilingual Matters, c2009 |
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ISBN |
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9786611973407 |
9781281973405 |
1281973408 |
9781847691170 |
184769117X |
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Edizione |
[1st ed.] |
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Descrizione fisica |
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1 online resource (325 p.) |
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Collana |
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Communication disorders across languages |
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Altri autori (Persone) |
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LawSam-po |
WeekesBrendan |
WongAnita M-Y |
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Disciplina |
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Soggetti |
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Language disorders - China |
Communicative disorders - China |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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Note generali |
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Description based upon print version of record. |
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Nota di bibliografia |
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Includes bibliographical references. |
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Nota di contenuto |
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Front matter -- Contents -- Contributors -- Preface -- Chapter 1. Characteristics of Chinese in Relation to Language Disorders -- Chapter 2. The Role of Phonological Saliency and Phonological Template in Typically and Atypically Developing Phonology: Evidence from Putonghua-speaking Children -- Chapter 3. Grammatical Characteristics of Mandarin-speaking Children with Specific Language Impairment -- Chapter 4. A Construction Account of Question Acquisition in Cantonese-speaking Children with Specific Language Impairment -- Chapter 5. Morphosyntactic Deficits in Cantonese-speaking Children with Specific Language Impairment -- Chapter 6. Assessing Cantonese-speaking Children with Language Difficulties from the Perspective of Evidence based Practice: Current Practice and Future Directions -- Chapter 7. Morphological Deficit and Dyslexia Subtypes in Chinese -- Chapter 8. Developmental Dyslexia in Chinese: Behavioral, Genetic and Neuropsychological Issues -- Chapter 9. Lexical Tones Perceived by Chinese Aphasic Subjects -- Chapter 10. |
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Selective Grammatical Class Deficits: Implications for the Representation of Grammatical Information in Chinese -- Chapter 11. Acquired Reading Disorders in Chinese: Implications for Models of Reading -- Chapter 12. Age of Acquisition Effects on Picture Naming in Chinese Anomia -- Chapter 13. The Effect of Semantic Integrity of Words with Preserved Lexico-phonological Representation on Verbal Recall -- Chapter 14. Cantonese Linguistic Communication Measure (CLCM): A Clinical Tool for Assessing Aphasic Narrative Production -- Chapter 15. A Semantic Treatment for Cantonese Anomic Patients: Implications for the Relationship Between Impairment and Therapy -- Chapter 16. Acquired Dyslexia in Mongolian and Chinese -- Appendix |
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Sommario/riassunto |
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Research interest in Chinese language impairments can be traced back to the 1930's. Despite the significant advances made in this research field over the past two decades, this body of work has not received the attention it deserves. This book fills a gap in the field and represents the latest research in Chinese language disorders in children and adults. The work presented in this volume addresses theoretical and clinical issues relevant to specific language impairment in children, developmental dyslexia, phonological impairment in children and adults, and acquired dyslexia and dysgraphia. The book will appeal to interdisciplinary researchers from cognitive psychology, linguistics, and neurology with interests in the Chinese language, speech-language therapists working with Chinese-speaking clients, educationists, in particular language teachers of children learning to read and write Chinese, as well as neuroscientists. It will serve as a good reference book for advanced level undergraduate courses or graduate courses in speech/language pathologies and psycholinguistics. |
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2. |
Record Nr. |
UNINA9910972318803321 |
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Titolo |
III-V compound semiconductors : integration with silicon-based microelectronics / / edited by Tingkai Li, Michael Mastro, Armin Dadgar |
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Pubbl/distr/stampa |
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Boca Raton, : CRC Press, 2010 |
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ISBN |
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1-04-022015-0 |
0-429-19162-6 |
1-4398-1523-2 |
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Edizione |
[First edition.] |
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Descrizione fisica |
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1 online resource (588 p.) |
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Altri autori (Persone) |
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LiTingkai |
MastroMichael A. <1975-> |
DadgarArmin |
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Disciplina |
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Soggetti |
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Compound semiconductors |
Electronics |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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Note generali |
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Description based upon print version of record. |
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Nota di bibliografia |
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Includes bibliographical references and index. |
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Nota di contenuto |
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Front cover; Contents; Preface; Contributors; Part I. Technical Fundamentals and Challenges; Chapter 1. Fundamentals and the Future of Semiconductor Device Technology; Chapter 2. Challenge of III-V Materials Integration with Si Microelectronics; Chapter 3. III-Nitrides on Si Substrates; Chapter 4. New Technology Approaches; Chapter 5. Group III-A Nitrides on Si: Stress and Microstructural Evolution; Chapter 6. Direct Growth of III-V Devices on Silicon; Chapter 7. Optoelectronic Devices Integrated on Si; Chapter 8. Reliability of III-V Electronic Devices |
Chapter 9. In Situ Curvature Measurements, Strains ,and Stresses in the Case of Large Wafer Bending and Multilayer SystemsChapter 10. X-Ray Characterization of Group III-Nitrides; Chapter 11. Luminescence in GaN; Chapter 12. GaN-Based Optical Devices on Silicon; Chapter 13. Conventional III-V Materials and Devices on Silicon; Chapter 14. III-V Solar Cells on Silicon; Back cover |
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Sommario/riassunto |
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"Silicon-based microelectronics has steadily improved in various performance-to-cost metrics. But after decades of processor scaling, fundamental limitations and considerable new challenges have |
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emerged. The integration of compound semiconductors is the leading candidate to address many of these issues and to continue the relentless pursuit of more powerful, cost-effective processors.III-V Compound Semiconductors: Integration with Silicon-Based Microelectronics covers recent progress in this area, addressing the two major revolutions occurring in the semiconductor industry: integration of compound semiconductors into Si microelectronics, and their fabrication on large-area Si substrates. The authors present a scientific and technological exploration of GaN, GaAs, and III-V compound semiconductor devices within Si microelectronics, building a fundamental foundation to help readers deal with relevant design and application issues. Explores silicon-based CMOS applications developed within the cutting-edge DARPA programProviding an overview of systems, devices, and their component materials, this book:Describes structure, phase diagrams, and physical and chemical properties of III-V and Si materials, as well as integration challengesFocuses on the key merits of GaN, including its importance in commercializing a new class of power diodes and transistors Analyzes more traditional III-V materials, discussing their merits and drawbacks for device integration with Si microelectronicsElucidates properties of III-V semiconductors and describes approaches to evaluate and characterize their attributesIntroduces novel technologies for the measurement and evaluation of material quality and device propertiesInvestigates state-of-the-art optical devices, LEDs, Si photonics, high-speed, high-power III-V materials and devices, III-V solar cell devices, and moreAssembling the work of renowned experts, this is a reference for scientists and engineers working at the intersection of Si and compound semiconductor technology. Its comprehensive coverage is valuable for both students and experts in this burgeoning field."--Provided by publisher. |
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