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1. |
Record Nr. |
UNINA9910959760403321 |
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Titolo |
A Common destiny : Blacks and American society / / Gerald David Jaynes and Robin M. Williams, Jr., editors ; Committee on the Status of Black Americans, Commission on Behavioral and Social Sciences and Education, National Research Council |
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Pubbl/distr/stampa |
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Washington, D.C., : National Academy Press, 1989 |
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ISBN |
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9786610214389 |
9781280214387 |
1280214384 |
9780309555371 |
030955537X |
9780585024486 |
0585024480 |
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Edizione |
[1st ed.] |
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Descrizione fisica |
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1 online resource (624 p.) |
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Altri autori (Persone) |
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JaynesGerald David |
WilliamsRobin Murphy |
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Disciplina |
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Soggetti |
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African Americans - Social conditions - 1975- |
African Americans - Economic conditions |
African Americans - Politics and government |
United States Race relations |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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Note generali |
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Papers and studies resulting from a four-year study conducted under the aegis of the Committee on the Status of Black Americans. |
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Nota di bibliografia |
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Includes bibliographical references and index. |
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Nota di contenuto |
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""A Common Destiny""; ""Copyright""; ""Contents""; ""Preface""; ""Summary and Conclusions""; ""SUMMARY OF MAJOR FINDINGS""; ""Blacks and Whites in a Changing Society""; ""Determinants of Black Status""; ""A RECORD OF THE STATUS OF BLACK AMERICANS""; ""Attitudes, Participation, Identity, and Institutions""; ""Political Participation""; ""Economic Status""; ""Schooling""; ""Health""; ""Crime and Criminal Justice""; ""Children and Families""; ""THE FUTURE: ALTERNATIVES AND POLICY IMPLICATIONS""; ""Blacks' Status in the Near Future""; ""Residential Segregation""; ""Income and Poverty"" |
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""Policy Alternatives""""Black Perspectives""; ""CONCLUSION""; "" 1 Overview: Then and Now ""; ""CHANGE AND CONTINUITY IN BLACK-WHITE STATUS SINCE 1940""; ""The Baseline Cohort""; ""The Most Recent Cohort""; ""Uneven Changes""; ""DATA, FINDINGS, AND INTERPRETATIONS: CONCEPTS AND METHODS""; ""Study Methods""; ""Determinants of Black Status""; ""Interpreting Data""; ""Explaining Black-White Differences""; ""Residential Segregation and Its Effects""; ""Description of the Report""; ""REFERENCES""; ""NOTE""; "" 2 Black Participation in American Society ""; ""THE BASELINE PERIOD: 1935-1945"" |
""Social Relations Under Jim Crow""""Migration and Urbanization""; ""Rising Black Protest""; ""BLACK PARTICIPATION IN SOCIAL INSTITUTIONS SINCE 1945""; ""The Military""; ""Desegregation of the Armed Forces""; ""The Modern Military""; ""Public Schools""; ""Trends in School Desegregation""; ""Effects of School Desegregation""; ""Resegregation Within Desegregated Schools""; ""Blacks, Whites, and School Desegregation""; ""PUBLIC ACCOMMODATIONS AND WORK ENVIRONMENTS""; ""Workplaces""; ""Labor Unions and Equal Employment""; ""RESIDENTIAL SEGREGATION""; ""Metropolitan Areas""; ""Neighborhoods"" |
""BLACK PARTICIPATION IN SOCIAL LIFE SINCE 1945""""Churches And Religious Life""; ""Organized Sports""; ""ARTS AND ENTERTAINMENT""; ""CONCLUSION""; ""REFERENCES""; "" 3 Racial Attitudes and Behavior""; ""THE EMPIRICAL RECORD: 1940-1986""; ""Change in Racial Attitudes: An Overview""; ""White Attitudes""; ""The Scientific American Reports""; ""Social Distance""; ""SOCIAL POLICY, SOCIAL CONTEXT, AND RACIAL ATTITUDES""; ""Black Attitudes""; ""Support for Principles and Implementation Policies""; ""Black Alienation from White Society""; ""BLACK AND WHITE PREFERENCES FOR BLACK-WHITE RELATIONS"" |
""CONTEMPORARY BLACK-WHITE RELATIONS""""Public Accommodations and Retail Establishments""; ""Racial Attitudes and Discrimination In Housing""; ""Housing and Socioeconomic Status""; ""Discrimination in the Workplace""; ""EXPLANATIONS OF BLACK AND WHITE ATTITUDES TOWARD RACE""; ""Three Interpretations""; ""Competing Values""; ""The Meaning of Racial Equality""; ""Group Status""; ""CONCLUSIONS""; ""REFERENCES""; "" 4 Identity and Institutions in the Black Community""; ""SOCIAL STRUCTURE""; ""Before the Civil Rights Movement""; ""A Segregated Society""; ""Black Cultural Life"" |
""After the Civil Rights Movement"" |
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Sommario/riassunto |
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" A] collection of scholars has] released a monumental study called A Common Destiny: Blacks and American Society. It offers detailed evidence of the progress our nation has made in the past 50 years in living up to American ideals. But the study makes clear that our work is far from over." --President Bush Remarks by the president to the National Urban League Conference The product of a four-year, intensive study by distinguished experts, A Common Destiny presents a clear, readable "big picture" of blacks' position in America. Drawing on historical perspectives and a vast amount of data, the book examines the past 50 years of change and continuity in the status of black Americans. By studying and comparing black and white age cohorts, this volume charts the status of blacks in areas such as education, housing, employment, political participation and family life. |
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2. |
Record Nr. |
UNINA9910970280303321 |
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Titolo |
Germanium : properties, production and applications / / Regina V. Germanno, editor |
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Pubbl/distr/stampa |
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New York, : Nova Science Publishers, c2012 |
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ISBN |
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Edizione |
[1st ed.] |
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Descrizione fisica |
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1 online resource (338 p.) |
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Collana |
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Chemical engineering methods and technology |
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Altri autori (Persone) |
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Disciplina |
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Soggetti |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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Note generali |
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Description based upon print version of record. |
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Nota di bibliografia |
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Includes bibliographical references and index. |
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Nota di contenuto |
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Intro -- GERMANIUM PROPERTIES, PRODUCTION AND APPLICATIONS -- GERMANIUM PROPERTIES, PRODUCTION AND APPLICATIONS -- CONTENTS -- PREFACE -- DEFECTS IN GERMANIUM: THEORETICAL ASPECTS -- 1.Introduction -- 2.Techniquesforidentificationofdefectsingermanium -- 2.1.Theoreticalmethods -- 2.1.1.Densityfunctionaltheory -- 2.1.2.Boundaryconditions:clustersandsupercells -- 2.1.3.Tacklingthebandgapproblem -- 2.1.4.Calculationofobservables -- 2.2.Experimentalmethods -- 3.Intrinsicdefects -- 3.1.Theself-interstitial -- 3.1.1.Structureandenergetics -- 3.1.2.Ionizationlevels -- 3.1.3.Diffusion -- 3.2.Thevacancy -- 3.2.1.Geometryandelectronicstructure -- 3.2.2.Formationenergies -- 3.3.Thedivacancy -- 3.4.Furthervacancyclustering -- 4.Oxygen -- 4.1.Interstitialoxygen -- 4.2.Oxygendimer -- 4.3.Complexesofself-interstitialswithoxygen -- 4.4.Thermaldonors -- 4.4.1.Earlystateaggregation -- 4.4.2.AtomicStructureofTDD's -- 4.4.3.Electronicstructuremodel -- 4.4.4.Furtherobservables -- 4.5.Thevacancy-oxygencomplex(Acenter) -- 4.5.1.Structureandvibrationalmodes -- 4.5.2.Ionizationlevels -- 4.6.Formation:ametastableVOprecursor -- 4.6.1.Annealing -- 4.7.Vacancy-di-oxygen(VO2)defects -- 4.7.1.Structure -- 4.7.2.Ionizationlevels -- 4.7.3.Localvibrationalmodes -- 5.Hydrogen -- 5.1.Isolatedinterstitialhydrogen -- 5.1.1.Geometry -- 5.1.2.Localvibrationalmodes -- 5.1.3.Ionizationlevels -- 5.2.Hydrogendimer -- 5.3.Interactionofhydrogenwithotherdefects -- 5.4.Vacancy- |
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hydrogen(VmHn)complexes -- 5.5.Hydrogen-inducedplatelets -- 6.Shallowdopantsandrelateddefects -- 6.1.Boron -- 6.2.InterstitialBoron -- 6.2.1.Geometry -- 6.2.2.Ionizationlevels -- 6.3.Borondiffusion -- 6.3.1.Othergroup-IIIacceptors -- 6.4.Group-Vdonors -- 6.5.Donor-vacancycomplexes(E-centers) -- 6.5.1.Structuregeometry -- 6.5.2.Ionizationlevels -- 6.5.3.Diffusion -- 6.6.Furtherdonor-vacancyaggregation. |
6.7.InterstitialPhosphorus -- 6.8.Diffusionofgroup-Vdonors -- 6.8.1.Influenceofthecarboncontent -- 7.Metals -- 7.1.Substitutional(Ms) -- 7.2.InteractionbetweenMsandvacancies(Ms-V) -- 7.3.Self-interstitial-metalcomplexes(I-Ms) -- 7.4.Interstitialmetals(Mi) -- 7.5.Substitutional-Interstitialpairs(Ms-Mi) -- 8.OtherImpurities -- 8.1.Carbon -- 8.2.Nitrogen -- 8.3.Chalcogens -- 9.Differencesbetweendefectsinsiliconandgermanium -- 10.Conclusionandoutlook -- References -- ADefectssignatures:Experimentvs.First-Principlescalculations -- PROPERTIES AND GENERATION BY IRRADIATION OF GERMANIUM POINT DEFECTS IN GE-DOPED SILICA -- ABSTRACT -- 1. INTRODUCTION -- 1.1. SiO2,GeO2 and GeO2-SiO2 Glasses -- 1.2. Point Defects -- 1.3. Photosensitivity and Second Harmonic Generation -- 1.4. Oxygen Deficiency -- 1.4.1. The Oxygen Mono Vacancy -- 1.4.2. Germanium Lone Pair Center (GLPC) -- 1.5. Radiation Effects -- 1.6. Structural Models of the Paramagnetic Point Defects -- 1.7. H(II) Paramagnetic Point Defects -- 1.8. Radiation Induced Absorption Bands -- 1.9. Generation Mechanisms -- 2. MATERIALS -- 2.1. Sol-Gel Preparation Technique -- 2.2. Plasma-Activated Chemical Vapour Deposition -- 2.3. Samples -- 3. GENERATION OF GE PARAMAGNETIC POINT DEFECTS -- 3.1. Induced EPR Activity: General Features -- 3.2. EPR Line Shape of the Ge Related Defects -- 3.3. Decomposition of the Experimental EPR Spectra -- 3.4. Paramagnetic Point Defect Concentrations Induced by Irradiation -- 3.4.1. Type 1 Samples -- 3.4.2. Type 3 Samples -- 3.4.3. Type 4 Samples -- 3.4.4. Type 5 Samples -- 3.4.5. PCVD Samples -- 3.5. Ge(1) Point Defects -- 3.6. Ge(2) and E'Ge Point Defects -- 4. REFRACTIVE INDEX VARIATIONS -- 4.1. Absorption Induced Activity -- 4.2. Dependence of the Refractive Index Changes on Ge(1) Defects -- 5. INDUCED GLPC -- 5.1. PL Spectra of the Induced GLPC. |
5.1.2. PLE Spectra of the Induced GLPC -- 5.1.3. Time Decay Measurements of the Induced β Band -- 5.1.4. Temperature Dependence of the PL Spectra -- 5.1.5. Time Dependence of the Emission -- 5.1.6. Intersystem Crossing Process in the Induced GLPC -- 5.1.7. Paramagnetic Defects Related to the Induced GLPC -- 5.1.8. GLPC Generation in PCVD Material -- 5.1.9. Discussion on the Emission of the Induced GLPC -- 5.2. Dose Dependence of the Induced Point Defects in Sample B0 -- 5.3. Comparison of the γ and the β Irradiations -- 5.4. Thermal Stability of the Induced GLPC and PL Profile Modification -- 5.5. Temperature Dependence of the PL Spectra of the Residual GLPC -- 5.6. Time Dependence of the Emission of the Residual GLPC -- 5.7. Intersystem Crossing Process of the Residual GLPC -- CONCLUSION -- REFERENCES -- GERMANIUM ENCAGED FULLERENE-SYNTHESIS, EXTRACTION, THEORETICAL CALCULATION AND THEIR POSSIBLE APPLICATION -- 1. ABSTRACT -- 2. INTRODUCTION -- 3. OVERVIEW -- 4. SYNTHESIS OF Ge ENDOHEDRAL METALLOFULLERENE -- 5. ISOLATION AND PURIFICATION OF Ge ENDOHEDRAL METALLOFULLERENE -- 6. CHARACTERIZATION OF Ge ENDOHEDRAL METALLOFULLERENE -- 7. THEORETICAL CALCULATIONS OF Ge ENDOHEDRAL METALLOFULLERENE -- 7.1. Encapsulation of Ge2 Inside C60 -- 8. APPLICATION OF Ge ENDOHEDRAL METALLOFULLERENE -- ACKNOWLEDGMENTS -- REFERENCES -- CHANGE THE PROPERTIES OF |
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SILICON AND GERMANIUM STRUCTURES WITH FILMS OF OXIDE AND FLUORIDE RARE EARTH ELEMENTS DURING EXTERNAL IMPACTS -- ABSTRACT -- I. INTRODUCTION -- II. EXPERIMENTAL SAMPLES -- A. Fluoride REE Films on Germanium Substrates -- B. Oxide REE Films on Silicon Substrates -- III. KINETIC CHARACTERISTICS OF ELECTROFORMING PROCESS OXIDE AND FLUORIDE REE FILM STRUCTURES -- IV. THE IMPACT OF ELECTRIC FIELD -- A. Structure with Fluoride Rare Earth Elements Films -- 1. Assessment High-Frequency Interface Traps Capacity. |
2. Assessment of Traps Energy Situation in Germanium Band Gap -- 3. Change the Distribution of the Interface States Energy Density in Germanium Band Gap during the Electroforming Process -- B. Structure with Rare Earth Element Oxide Films -- 1. REE Oxides on n-Type Silicon Substrates -- 2. P-type Silicon Structure with Films of Oxides REE -- CONCLUSION -- NOTE -- REFERENCES -- APPLICATIONS OF RF SPUTTERED GEXSI1-X AND GEXSI1-XOY THIN FILMS FOR UNCOOLED INFRARED DETECTORS -- ABSTRACT -- I. INTRODUCTION -- A. Infrared Radiation -- B.Applications of Infrared Radiation -- C. Infrared Detectors -- Photon Detector -- Thermal Detector -- D. Bolometer -- E.Bolometer Figures of Merits -- Spectral Response -- TCR -- Responsivity -- Detectivity -- Noise Equivalent Power (NEP) -- Noise Equivalent TemperatureDifference (NETD) -- F. ThermisterMaterial -- II. THIN FILM DEPOSITION -- A. a-GexSi1-xThin Film Deposition -- B. a-GexSi1-xOyThin Film Deposition -- III. PROPERTIES OF GEXSI1-X AND GEXSI1-XOYTHIN FILM -- IV. APPLICATIONS OF RFSPUTTEREDGEXSI1-X AND GEXSI1-XOY FILMS: MICROBOLOMETER FABRICATION -- V. BOLOMETER CHARACTERIZATION -- VI. PERFORMANCE OF MICROBOLOMETER -- VII. NOISE REDUCTION OF A-GEXSI1-XOY MICROBOLOMETER BY FORMING GAS PASSIVATION -- VIII. EXPERIMENTAL DETAILS FOR FORMING GAS PASSIVATION -- IX. RESULTS OF FORMING GAS PASSIVATION -- CONCLUSION -- REFERENCES -- NEW GENERATION GERMANIUM DETECTORS FOR DOUBLE BETA DECAY SEARCHES -- Abstract -- 1.PotentialofDoubleBetaDecay -- 2.DetectionofDoubleBetaDecay -- 3.NewGenerationGermaniumExperiments -- 4.BackgroundReductionandSensitivity -- 4.1.Simulation -- 4.2.RejectionofBackground -- 4.2.1.Granularity -- 4.2.2.Segmentation -- 4.2.3.PSA -- 4.3.EfficiencyandSensitivity -- 4.3.1.EfficiencytoSignal -- 4.3.2.Sensitivity -- 5.Conclusion -- Acknowledgments -- References. |
GROWTH OF Ge CRYSTALS WITH EXTREMELY LOW DISLOCATION DENSITY -- ABSTRACT -- I. INTRODUCTION -- II. DISLOCATION-FREE Ge CRYSTAL GROWTH BY THE NEW CZOCHRALSKI METHOD -- A. Difficulty in Growth of Dislocation-Free Ge Crystals -- B. Procedure of New CZ Growth -- C. Grown Ge Boules -- D. Electrical and Chemical Valuation of Grown Ge Crystals -- E. Evaluation of Grown Ge Crystals by Infrared Absorption -- F. Role of B2O3 Liquid in Growth of Ge Crystals -- III. OXYGEN-ENRICHED Ge CRYSTAL GROWTH BY THE NEW CZOCHRALSKI METHOD -- A. Oxygen in Ge -- B. Procedure of O-Enriched Ge Crystal Growth -- C. O-Enriched Ge Boules -- D. Evaluation of Oxygen Concentration in O-Enriched Ge Crystals by Infrared Absorption -- IV. SOLUBILITY AND SEGREGATION OF OXYGEN INTO Ge -- CONCLUSION -- ACKNOWLEDGMENTS -- REFERENCES -- INDEX. |
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Sommario/riassunto |
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Germanium is an important semiconductor material used in transistors and various other electronic devices. Its major end uses are fibre-optic systems and infrared optics, but it is also used for polymerisation catalysts, as well as in electronics and solar cell applications. This book presents current research in the study of germanium, including |
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properties and generation by irradiation of germanium point defects in Ge-doped silica; Germanium encaged fullerene-synthesis; research of silicon and germanium structures with films of oxides and fluoride rare earth elements and new generation germanium detectors for double beta decay searches. |
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