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1. |
Record Nr. |
UNINA9911004827403321 |
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Titolo |
Conveyance of residuals from water and wastewater treatment / / Sludge Treatment, Utilization, Reclamation, and Disposal Committee of the Environmental and Water Resources Institute of the American Society of Civil Engineers |
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Pubbl/distr/stampa |
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Reston, Va., : American Society of Civil Engineers, c2000 |
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ISBN |
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Descrizione fisica |
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1 online resource (193 p.) |
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Collana |
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ASCE manuals and reports on engineering practice ; ; no. 98 |
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Disciplina |
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Soggetti |
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Sewage sludge - Management |
Sewage sludge - Characterization |
Sewage disposal plants - Design and construction |
Water treatment plant residuals - Management |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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Note generali |
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Description based upon print version of record. |
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Nota di bibliografia |
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Includes bibliographical references and index. |
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Nota di contenuto |
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Introduction; Rheology and the Distribution of Water in Sludge; Sludge Sources, Composition, and Characteristics; Overview of Residuals Conveyance Devices; Pumping of Non-Newtonian Sludges and Slurries; Transport of Thickened Residuals; Conveyance of Dewatered Residuals; Transport of Granular and Compactable Residuals; Case Histories; Index |
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Sommario/riassunto |
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Prepared by the Environmental and Water Resources Institute of ASCE. This Manual of Practice provides detailed guidance to determine the handling characteristics of residuals and to select appropriate conveyance systems. As residuals are processed and handled, their intrinsic properties (such as viscosity, rheology, flowability, and texture) change. If these changes are not recognized and the proper transport devices used, problems can result in the processing and disposal of these materials. To ensure correct handling and transport of residuals, this manual describes a procedure for classifying residuals according to their transport properties. A detailed examination of the rheology, composition, and transport characteristics of residual solids is included, as well as a comprehensive listing of the equipment |
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available, with photographs and illustrations, for transporting residuals. By providing details on handling characteristics and transport equipment, this manual assists engineers in determining the most efficient type of transport for each of the major classifications of residuals: non-Newtonian slurries, thickened residuals, dewatered residuals, and granular and compactable residuals. Four case studies, highlighting lessons from actual operating installations, are also included. The specific equipment that produces the residuals to be conveyed is discussed to define any operating factors that could affect the transport characteristics. |
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2. |
Record Nr. |
UNINA9910961790903321 |
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Autore |
Galup-Montoro Carlos |
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Titolo |
MOSFET modeling for circuit analysis and design / / Carlos Galup-Montoro, Marcio Cherem Schneider |
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Pubbl/distr/stampa |
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Singapore ; ; Hackensack, NJ, : World Scientific, c2007 |
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ISBN |
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9786611120870 |
9781281120878 |
1281120871 |
9789812707598 |
981270759X |
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Edizione |
[1st ed.] |
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Descrizione fisica |
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1 online resource (445 p.) |
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Collana |
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International series on advances in solid state electronics and technology |
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Altri autori (Persone) |
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Disciplina |
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Soggetti |
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Metal oxide semiconductor field-effect transistors - Mathematical models |
Field-effect transistors - Mathematical models |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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Note generali |
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Description based upon print version of record. |
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Nota di bibliografia |
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Includes bibliographical references and index. |
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Nota di contenuto |
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Foreword; Preface; Contents; List of Selected Symbols; Chapter 1 Introduction; Chapter 2 The MOS Capacitor; Chapter 3 The Long-Channel MOSFET: Theory and dc Equations; Chapter 4 The Real MOS Transistor: dc Models; Chapter 5 Stored Charges and Capacitive Coefficients; Chapter 6 Mismatch Modeling; Chapter 7 Noise in |
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MOSFETs; Chapter 8 High-Frequency Models; Chapter 9 Gate and Bulk Currents; Chapter 10 Advanced MOSFET Structures; Chapter 11 MOSFET Parameter Extraction; Chapter 12 Advanced MOSFET Models for Circuit Simulators; Appendix A Electrostatics in One Dimension |
Appendix B Electrostatics in SemiconductorsAppendix C Drift-diffusion Current Model; Appendix D Continuity Equations; Appendix E Basics of pn Junctions; Appendix F Hall-Shockley-Read (HSR) Statistics; Appendix G Interface Trap Capacitance; Index |
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Sommario/riassunto |
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This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach. Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact ex |
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