1.

Record Nr.

UNINA9910960098903321

Autore

Gossard A. C

Titolo

Advanced epitaxy for future electronics, optics, and quantum physics / / by Arthur C. Gossard

Pubbl/distr/stampa

Washington, D.C., : National Academy Press, c2000

ISBN

9780309183963

0309183960

9780309512879

0309512875

Edizione

[1st ed.]

Descrizione fisica

1 online resource (19 p.)

Collana

International science lecture series ; ; 7th lecture

The compass series

Disciplina

548/.5

Soggetti

Epitaxy

Lingua di pubblicazione

Inglese

Formato

Materiale a stampa

Livello bibliografico

Monografia

Note generali

Bibliographic Level Mode of Issuance: Monograph

Nota di bibliografia

Includes bibliographical references.

Nota di contenuto

Front Matter -- Preface -- Abstract -- Advanced Epitaxy for Future Electronics, Optics, and Quantum Physics.

Sommario/riassunto

The future development of electronics, optics, and, quite probably, quantum physics is being driven by advances in epitaxial materials. Band gap engineering, wafer bonding techniques, and epitaxial regrowth technology will push transistors far beyond the present speed barriers. Oxide growth within epitaxial layer structures and new advances in tunnel structures will push the development of the next generation of high-performance laser arrays and of efficient cascade laser designs. Perfection of the growth of semiconductor nitrides will move future electronics to higher powers and to suitability for extreme environments while revolutionizing lighting and display. Growth technologies to incorporate metallic particles and magnetic elements within high-quality semiconductors promise ultrafast electro-optical components for chemical and biological applications as well as electronically controlled magnetism for future memories and electrical/magnetic hybrid devices. Quantum dot materials will lead the field of signal electronics while hopefully providing a new proving and discovery ground for quantum physics. This paper dicusses the current



progress in these areas.