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Record Nr. |
UNINA9910464874003321 |
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Titolo |
Gettering and defect engineering in semiconductor technology XV : selected papers from the 15th Gettering and Defect Engineering in Semiconductor Technology Conference (GADEST 2013), September 22-27, 2013, Oxford, UK / / edited by J.D. Murphy |
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Pubbl/distr/stampa |
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Durnten-Zurich, Switzerland : , : Trans Tech Publications, , [2014] |
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©2014 |
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ISBN |
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Descrizione fisica |
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1 online resource (513 p.) |
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Collana |
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Solid state phenomena ; ; 205-206 |
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Altri autori (Persone) |
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Disciplina |
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Soggetti |
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Semiconductors |
Solid state electronics |
Electronic books. |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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Note generali |
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Description based upon print version of record. |
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Nota di bibliografia |
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Includes bibliographical references and index. |
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Nota di contenuto |
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Gettering and Defect Engineering in Semiconductor Technology XV; Preface, Committees, Invited Speakers and Sponsor; Table of Contents; I. Defect Engineering in Silicon Solar Cells; Light-Induced Boron-Oxygen Recombination Centres in Silicon: Understanding their Formation and Elimination; Iron Management in Multicrystalline Silicon through Predictive Simulation: Point Defects, Precipitates, and Structural Defect Interactions; External and Internal Gettering of Interstitial Iron in Silicon for Solar Cells; Precipitation of Interstitial Iron in Multicrystalline Silicon |
Direct Observation of Carrier Trapping Processes on Fe Impurities in mc-Si Solar CellsOn the Trade-Off between Industrially Feasible Silicon Surface Preconditioning Prior to Interface Passivation and Iron Contaminant Removal Effectiveness; II. Structural and Production Issues in Cast Silicon Materials for Solar Cells; Defect Generation and Propagation in Mc-Si Ingots: Influence on the Performance of Solar Cells; Characterisation of Dislocation-Content in Multicrystalline-Silicon Wafers |
The Impact of Dislocation Structure on Impurity Decoration of Dislocation Clusters in Multicrystalline SiliconAnalysis of |
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Inhomogeneous Dislocation Distribution in Multicrystalline Si; Properties of Strong Luminescence at 0.93 eV in Solar Grade Silicon; 10 cm Diameter Mono Cast Si Growth and its Characterization; Characterization of Residual Strain in Si Ingots Grown by the Seed-Cast Method; III. Characterisation of Silicon for Solar Cells; Overview and Latest Developments in Photoconductance Lifetime Measurements in Silicon |
Efficiency-Limiting Recombination in Multicrystalline Silicon Solar CellsPhotoluminescence Imaging of Silicon Bricks; Inline PL Inspection and Advanced Offline Evaluation of Passivation Defects, Charge and Interfaces; Transition Metal Precipitates in Mc Si: A New Detection Method Using 3D-FIB; A Comparison of EBIC, LBIC and XBIC Methods as Tools for Multicrystalline Si Characterization; IV. Intrinsic Point Defects in Silicon; Properties of Point Defects in Silicon: New Results after a Long-Time Debate; Fast and Slow Vacancies in Silicon |
Theoretical Study of the Impact of Stress on the Behavior of Intrinsic Point Defects in Large-Diameter Defect-Free Si CrystalsV. Light Impurities in Silicon-Based Materials; First Principle Study of the Diffusion of Oxygen and Oxygen Complexes in Si, SiGe Solid Solutions and Si Nanocrystals; The Trivacancy and Trivacancy-Oxygen Family of Defects in Silicon; Monoisotopic 28Si in Spin Resonance Spectroscopy of Electrons Localized on Shallow Donors; Light-Element Impurities and their Reactions in Multicrystalline Si; Isotope-Dependent Phonon Trapping at Defects in Semiconductors |
Formation of Single and Double Donor States of Trivacancy-Oxygen Complexes in P-Type Silicon |
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Sommario/riassunto |
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The book includes both fundamental and technological aspects of defects in semiconductor materials and devices, including photovoltaics. The 74 papers are grouped as follows: I. Defect engineering in silicon solar cells; II. Structural and production issues in cast silicon materials for solar cells; III. Characterisation of silicon for solar cells; IV. Intrinsic point defects in silicon; V. Light impurities in silicon-based materials; VI. Metals in silicon: fundamental properties and gettering; VII. Extended and implantation-related defects in silicon; VIII. Surfaces, passivation and processin |
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2. |
Record Nr. |
UNINA9910959222003321 |
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Titolo |
Japan's relations with Southeast Asia : the Fukuda doctrine and beyond / / edited by Lam Peng Er |
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Pubbl/distr/stampa |
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New York : , : Routledge, , 2013 |
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ISBN |
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1-283-60699-2 |
9786613919441 |
1-136-23582-5 |
0-203-10155-3 |
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Edizione |
[1st ed.] |
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Descrizione fisica |
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1 online resource (225 p.) |
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Collana |
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Altri autori (Persone) |
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Disciplina |
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Soggetti |
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International relations |
Japan Foreign relations Southeast Asia |
Southeast Asia Foreign relations Japan |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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Note generali |
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Description based upon print version of record. |
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Nota di bibliografia |
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Includes bibliographical references and index. |
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Nota di contenuto |
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Cover; Title; Copyright; Contents; List of illustrations; List of contributors; Foreword; Acknowledgments; Introduction; 1 The Fukuda Doctrine: origins, ideas, and praxis; 2 The Fukuda Doctrine: diplomacy with a vision; 3 Great powers, ASEAN, and Japan: the Fukuda Doctrine and thirty-five years after; 4 Major power relations, regional order, and Japan-ASEAN relations; 5 Great power relations and their impact on Japan-Southeast Asian relations: a Chinese perspective; 6 Japan in the foreign relations of the ASEAN states |
7 Japan and ASEAN in East Asian Community-building: activating the Fukuda Doctrine8 Quo vadis, Asiae?: changing Japan-ASEAN relations and the future of Asian regional architecture; 9 New Japan-ASEAN cooperation for institutional building in the Asia-Pacific: beyond the Fukuda Doctrine?; Appendix 1: Fukuda Doctrine Prime Minister Fukuda Takeo's Doctrine Speech; Appendix 2: Fukuda Doctrine ASEAN Secretary General-Designate Dr. Surin Pitsuwan, "Fukuda Doctrine: Impact and Implications on Japan-ASEAN Relations" |
Appendix 3: Fukuda Doctrine Prime Minister Fukuda Yasuo, When the Pacific Ocean becomes an "Inland Sea": Five Pledges to a Future Asia |
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that "Acts Together"Appendix 4: Address by H.E. Dr. Hatoyama Yukio Prime Minister Hatoyama Yukio, "Japan's New Commitment to Asia: Toward the Realization of an East Asian Community"; Select bibliography; Index |
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Sommario/riassunto |
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The Fukuda Doctrine has been the official blueprint to Japan's foreign policy towards Southeast Asia since 1977. This book examines the Fukuda Doctrine in the context of Japan-Southeast Asia relations, and discusses the possibility of a non-realist approach in the imagining and conduct of international relations in East Asia.The collapse of 54 years of Liberal Democratic Party rule and the advent of a new Democratic Party of Japan raises the question of whether the Fukuda Doctrine is still relevant as a framework to analyse Tokyo's policy and behaviour towards Southeast Asia. Looking |
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