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Record Nr. |
UNINA9910877717903321 |
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Titolo |
Silicon nanocrystals : fundamentals, synthesis and applications / / edited by Lorenzo Pavesi and Rasit Turan |
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Pubbl/distr/stampa |
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Hoboken, NJ, : Wiley-Blackwell, 2010 |
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ISBN |
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1-282-48274-2 |
9786612482748 |
3-527-62995-5 |
3-527-62996-3 |
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Descrizione fisica |
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1 online resource (651 p.) |
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Altri autori (Persone) |
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Disciplina |
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Soggetti |
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Silicon |
Nanostructured materials |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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Note generali |
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Description based upon print version of record. |
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Nota di bibliografia |
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Includes bibliographical references and index. |
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Nota di contenuto |
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Silicon Nanocrystals: Fundamentals, Synthesis and Applications; Contents; List of Contributors; 1 Introduction; References; 2 Electronic and Optical Properties of Silicon Nanocrystals; 2.1 Introduction; 2.2 Ab Initio Calculation for Small Nanocrystals; 2.2.1 Hydrogenated Silicon Nanocrystals; 2.2.2 Oxidized Silicon Nanocrystals; 2.2.3 Doped Silicon Nanocrystals; 2.2.3.1 Single-Doped Silicon Nanocrystals; 2.2.3.2 Codoped Silicon Nanocrystals; 2.2.4 Silicon Nanocrystals Embedded in a SiO2 Matrix; 2.3 Pseudopotential Calculations for Large Nanocrystals; 2.3.1 Effective Optical Gap |
2.3.2 Radiative Lifetime2.3.3 Linear Optical Absorption; 2.3.3.1 Interband Absorption; 2.3.3.2 Intraband Absorption; 2.3.3.3 Excited State Absorption; 2.3.4 Third-Order Nonlinear Optical Properties; 2.3.5 Quantum-Confined Stark Effect in Si Nanocrystals; References; 3 Optical Properties of Intrinsic and Shallow Impurity-Doped Silicon Nanocrystals; 3.1 Introduction; 3.2 PL Properties of Intrinsic Silicon Nanocrystals; 3.2.1 Fundamental Properties; 3.2.2 Effect of Size and Shape Distribution on the PL Bandwidth; 3.2.3 Resonant Quenching of |
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