Handbook of nitride semiconductors and devices . Vol. 1 Materials properties, physics and growth / / Hadis Morkoc

• Record Nr.: UNINA9910877380403321
• Autore: Morkoc Hadis
• Pubbl/distr/stampa: Weinheim, : Wiley-VCH, 2008
• ISBN: 1-282-27935-1; 9786612279355; 3-527-62843-6; 3-527-62846-0
• Descrizione fisica: 1 online resource (1323 p.)
• Collana: Handbook of Nitride Semiconductors and Devices (VCH)
• Altri autori (Persone): MorkocHadis
• Disciplina: 621.38152
• Soggetti: Semiconductors - Materials; Nitrides
• Lingua di pubblicazione: Inglese
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Note generali: Description based upon print version of record.
• Nota di bibliografia: Includes bibliographical references and index.
• Nota di contenuto: Handbook of Nitride Semiconductors and Devices; Contents; Preface; Color Tables; 1 General Properties of Nitrides; Introduction; 1.1 Crystal Structure of Nitrides; 1.2 Gallium Nitride; 1.2.1 Chemical Properties of GaN; 1.2.2 Mechanical Properties of GaN; 1.2.3 Thermal Properties of GaN; 1.3 Aluminum Nitride; 1.3.1 Mechanical Properties of AlN; 1.3.2 Thermal and Chemical Properties of AlN; 1.3.3 Electrical Properties of AlN; 1.3.4 Brief Optical Properties of AlN; 1.4 Indium Nitride; 1.4.1 Crystal Structure of InN; 1.4.2 Mechanical Properties of InN; 1.4.3 Thermal Properties of InN; 1.4.4 Brief Electrical Properties of InN1.4.5 Brief Optical Properties of InN; 1.5 Ternary and Quaternary Alloys; 1.5.1 AlGaN Alloy; 1.5.2 InGaN Alloy; 1.5.3 InAlN Alloy; 1.5.4 InAlGaN Quaternary Alloy; 1.5.5 Dilute GaAs(N); References; 2 Electronic Band Structure and Polarization Effects; Introduction; 2.1 Band Structure Calculations; 2.1.1 Plane Wave Expansion Method; 2.1.2 Orthogonalized Plane Wave (OPW) Method; 2.1.3 Pseudopotential Method; 2.1.4 Augmented Plane Wave (APW) Method; 2.1.5 Other Methods and a Review Pertinent to GaN; 2.2 General Strain Considerations; 2.3 Effect of Strain on the Band Structure of GaN2.4 k·p Theory and the ; Quasi-Cubic Model; 2.5 Quasi-Cubic Approximation; 2.6 Temperature Dependence of Wurtzite GaN Bandgap; 2.7 Sphalerite (Zinc blende) GaN; 2.8 AlN; 2.8.1 Wurtzite AlN; 2.8.2 Zinc Blende AlN; 2.9 InN; 2.9.1 Wurtzitic InN; 2.9.2 Zinc Blende InN; 2.10 Band Parameters for Dilute Nitrides; 2.10.1 GaAsN; 2.10.2 InAsN; 2.10.3 InPN; 2.10.4 InSbN; 2.10.5 GaPN; 2.10.6 GaInAsN; 2.10.7 GaInPN; 2.10.8 GaAsSbN; 2.11 Confined States; 2.11.1 Conduction Band; 2.11.2 Valence Band; 2.11.3 Exciton Binding Energy in Quantum Wells; 2.12 Polarization Effects2.12.1 Piezoelectric Polarization; 2.12.2 Spontaneous Polarization; 2.12.3 Nonlinearity of Polarization; 2.12.3.1 Origin of the Nonlinearity; 2.12.3.2 Nonlinearities in Spontaneous Polarization; 2.12.3.3 Nonlinearities in Piezoelectric Polarization; 2.12.4 Polarization in Heterostructures; 2.12.4.1 Ga-Polarity Single AlGaN/GaN Interface; 2.12.4.2 Ga-Polarity Single Al(x)In(1-x)N/GaN Interface; 2.12.5 Polarization in Quantum Wells; 2.12.5.1 Nonlinear Polarization in Quantum Wells; 2.12.5.2 InGaN/GaN Quantum Wells; 2.12.6 Effect of Dislocations on Piezoelectric Polarization2.12.7 Thermal Mismatch Induced Strain; References; 3 Growth and Growth Methods for Nitride Semiconductors; Introduction; 3.1 Substrates for Nitride Epitaxy; 3.1.1 Conventional Substrates; 3.1.2 Compliant Substrates; 3.1.3 van der Waals Substrates; 3.2 A Primer on Conventional Substrates and their Preparation for Growth; 3.2.1 GaAs; 3.2.1.1 A Primer on GaAs; 3.2.1.2 Surface Preparation of GaAs for Epitaxy; 3.2.2 Si; 3.2.2.1 A Primer on Si; 3.2.2.2 Surface Preparation of Si for Epitaxy; 3.2.3 SiC; 3.2.3.1 A Primer on SiC; 3.2.3.2 Surface Preparation of SiC for Epitaxy
• Sommario/riassunto: The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with an extraordinary clarity and depth. They present all the necessary basics of semiconductor and device physics and engineering together with an extensive reference section. Volume 1 deals with the properties and growth of GaN. The deposition methods considered are: hydride VPE, organometallic CVD, MBE, and liquid/high pressure growth. Additionally, extended defects and their electrical nature, point defects, and doping are reviewed.