1.

Record Nr.

UNINA9910841493203321

Titolo

Developments in dielectric materials and electronic devices [[electronic resource] ] : proceedings of the 106th Annual Meeting of the American Ceramic Society : Indianapolis, Indiana, USA (2004) / / editors, K.M. Nair ... [et al.]

Pubbl/distr/stampa

Westerville, Ohio, : American Ceramic Society, c2005

ISBN

1-280-67403-2

9786613650962

1-118-40818-7

1-118-40819-5

Descrizione fisica

1 online resource (430 p.)

Collana

Ceramic transactions ; ; v. 167

Altri autori (Persone)

NairK. M <1933-> (K. Manikantan)

Soggetti

Dielectric devices

Dielectrics - Materials

Electronics - Materials

Lingua di pubblicazione

Inglese

Formato

Materiale a stampa

Livello bibliografico

Monografia

Note generali

Description based upon print version of record.

Nota di bibliografia

Includes bibliographical references and indexes.

Nota di contenuto

Developments in Dielectric Materials and Electronic Devices; Contents; Preface; Material Design, Synthesis & Properties; Hydrothermal Synthesis and Properties of Sodium-Doped Bismuth Titanate Powders; Novel Processing of Functional Ceramic Films by CSD with UV Irradiation; Processing and Dielectric Properties of La(Zn1/2Ti1/2)O3 and Nd(Zn1/2Ti1/2)O3; Effect of Synthesis Parameters on Nanocrystalline PZT Powder; Nanocrystalline Lead Free Piezoceramic (KxNa1-x)NbO3 Derived From Microemulsion Mediated Synthesis; Variable-Temperature Microwave Dielectric Properties of Single-Crystal Fluorides

Temperature and Frequency Dependence of Dielectric Properties in BSTThe Optical and Electrical Properties of Nanocrystalline La0.4Sr0.6TiO3 Thin Films; Relationship Between Microstructure and Electrical Properties in Various Rare-Earth Doped BME Materials; Effects of Lead Stoichiometry on the Microstructure and Mechanical Properties of PZT 95/5; Microstructure Evolution and Ferroelectric Domains in Nb2O5



and CaZrO3 Doped BaTiO3; Microstructure and Microwave Dielectric Properties of (1-x)ZnNb2O6-xZnTa2O6 Ceramics

The Synergistic Effects of Nb/Mn and Sb/Mn on the Microstructure and Electrical Characteristics of BaTiO3 Based CeramicsThermoelectric Properties of Ca-Doped (ZnO)mln2O3 Ceramics and Their Improvement Upon Texture; Materials for Electronic Devices; BaTiO3: From Nanopowders to Dense Nanocrystalline Ceramics; Crystallization, Microstructure and Dielectric Properties of PbO-BaO-SrO-Nb2O5-B2O3-SiO2 Based Glass-Ceramics; Polarization Properties and Ferroelectric Distortion of La-Substituted Bi4Ti3O12 Ceramics: Comparisons with V- and Nb-Doped Ceramics

Dielectric Ceramics from the TiO2-TeO2 and Bi2O3-TeO2 SystemsOrigin of High Dielectric Properties of NM-Sized Barium Titanate Crystallites; Piezoelectric Properties of Bismuth Sodium Titanate Ceramics; Nonlead Perovskite Piezoelectric Materials; MEMS Device Arrays Using Thick Composite PZT Films; Thick Piezoelectric Films from Laser Transfer Process; Multilayer Devices Comprised of Piezoceramic Thin Films on Dielectric Substrates; Dielectric Properties and Tunability of (Ba1-xSrxTiO3:MgO Composites; Dynamic Linear Electrooptic Property Influnced by Piezoelectric Resonance in PMN-PT Crystals

Electronic Devices & ApplicationsType I Base-Metal Electrode Multilayer Ceramic Capacitors; Properties of FRAM Capacitors with Oxide Electrodes; Impedance Analysis of BME Dielectric Ceramics; Electron Microscopy of Heterogeneous Interfaces in Cofired Noble and Base Metal Electrode Multilayer Ceramic Capacitors (MLCCS); Latex-Ferroelectric Composites; Comparison of Bulk and Thin-Film Ferroelectrics-A Device Perspective; Direct-Charge Capacitor Modeling; Novel BaTiO3-Ag Composites with Ultra-High Dielectric Constants Satisfying X7R Specifications

Novel Board Material Technology for Next-Generation Microelectronic Packaging

Sommario/riassunto

Papers in this volume include topics such as materials synthesis and processing; relaxors; novel compositions; material design; materials for multilayer electronic devices; processing-microstructure-property relationship; applications; environmental issues; and economic/cost analysis of tomorrow's electronic devices. Includes 38 papers.