Making a difference? : social assessment policy and praxis and its emergence in China / / edited by Susanna Price and Kathryn Robinson

• Record Nr.: UNINA9910788189403321
• Pubbl/distr/stampa: New York ; ; Oxford, [England] : , : berghahn, , 2015; ©2015
• ISBN: 1-78238-458-8
• Descrizione fisica: 1 online resource (315 p.)
• Collana: Asia-Pacific Studies: Past and Present
• Disciplina: 338.951
• Soggetti: Economic development projects - Social aspects - China; Social planning - China; Needs assessment - China; Public welfare - China; China Social policy; China Economic policy
• Lingua di pubblicazione: Inglese
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Note generali: Description based upon print version of record.
• Nota di bibliografia: Includes bibliographical references at the end of each chapters and index.
• Nota di contenuto: Contents; Figures and Tables; Preface; Abbreviations; Introduction - Making Economic Growth Socially Sustainable?; Part I - Engaged Social Research in Shifting Development Narratives; Introduction to Part I; 1 - Landmarks in Development: The Introduction of Social Analysis; 2 - Social Science and the Mining Sector: Contemporary Roles and Dilemmas for Engagement; 3 - Practising Social Development: Navigating Local Contexts to Benefit Local Communities; 4 - Striving for Good Practice: Unpacking AusAID's Approach to Community Development; 5 - Seeds of Life: Social Research for Improved Farmer Yields in Timor-LestePart II - Applying Sociological Knowledge in China; Introduction to Part II; 6 - Social Assessment in China: Progress and Application in Domestic Development Projects; 7 - Turning Risks into Opportunities? Social Assessment as Governmental Techologies; 8 - Participatory Monitoring of Development Projects in China; 9 - How Social Assessment Could Improve Conservation Policy and Projects: Cases ; from Pastoral Management in China; 10 - Improving Social Impact Assessment and Participatory Planning to Identify and Manage Involuntary Resettlement Risks in the People's Republic of China11 - Stakeholder Participation in Rural Land Acquisition in China: A Case Study of the Resettlement Decision-making Process; Conclusion; Contributors; Glossary; Index
• Sommario/riassunto: Social assessment for projects in China is an important emerging field. This collection of essays - from authors whose formative work has influenced the policies that shape practice in development-affected communities - locates recent Chinese experience of the development of social assessment practices (including in displacement and resettlement) in a historical and comparative perspective. Contributors - social scientists employed by international development banks, national government agencies, and sub-contracting groups - examine projects from a practitioner's perspective. Real-life experi

Wavelets [[electronic resource] ] : theory and applications / / edited by Gordon Erlebacher, M. Yousuff Hussaini, Leland M. Jameson

• Record Nr.: UNINA9910782429603321
• Pubbl/distr/stampa: New York, : Oxford University Press, 1996
• ISBN: 0-19-773272-0; 1-280-65492-9; 9786610654925; 0-19-802542-4
• Descrizione fisica: 1 online resource (523 p.)
• Collana: ICASE/LaRC Series in Computational Science and Engineering
• Altri autori (Persone): HussainiM. Yousuff; JamesonLeland M; ErlebacherGordon <1957->
• Disciplina: 515/.2433
• Soggetti: Wavelets (Mathematics); Harmonic analysis
• Lingua di pubblicazione: Inglese
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Note generali: "Formal notes of the short course on wavelets conducted by the Institute for Computer Applications in Science and Engineering (ICASE) and NASA Langley Research Center (LaRC) during February 22-26, ; 1993"--Pref.
• Nota di bibliografia: Includes bibliographical references and index.
• Nota di contenuto: Preface; Contents; 1 Introduction to Wavelets and their Application to Partial Differential Equations; 2 Wavelets from Filter Banks; 3 Wavelets, Functions, and Operators; 4 Wavelets, Multiresolution Analysis and Fast Numerical Algorithms; 5 Some Wavelet Algorithms for Partial Differential Equations; 6 Some Wavelet Algorithms for Turbulence Analysis and Modeling; 7 Wavelet Analysis of Fractals: from the Mathematical Concepts to Experimental Reality; Index
• Sommario/riassunto: 1. Introduction to Wavelets and their Applications to Partial Differential Equations, L.M. Jameson. 2. Wavelets from Filter Banks, G. Strang. 3. Wavelets, Functions, and Operators, Ph. Tchamitchian. 4. Wavelets, Multiresolution Analysis, and Fast Numerical Algorithms, G. Beylkin. 5. Some Wavelet Algorithms for Partial Differential Equations, J. Liandrat. 6. Some Wavelet Algorithms for Turbulence Analysis and Modelling, J. Liandrat. 7. Wavelet Analysis of Fractals: from the Mathematical Concepts to Experimental Reality, A. Arneodo

Nanogap electrodes / / edited by Tao Li

• Record Nr.: UNINA9910830665803321
• Pubbl/distr/stampa: Weinheim, Germany : , : Wiley, , [2021]; ©2021
• ISBN: 3-527-65958-7; 3-527-65959-5; 3-527-65956-0
• Descrizione fisica: 1 online resource (435 pages)
• Disciplina: 621.3815
• Soggetti: Nanoelectronics; Electrodes
• Lingua di pubblicazione: Inglese
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Nota di bibliografia: Includes bibliographical references and index.
• Nota di contenuto: Cover -- Title Page -- Copyright -- Contents -- Preface -- Chapter 1 Nanogap Electrodes and Molecular Electronic Devices -- 1.1 Introduction -- 1.2 Overview of Molecular Electronics -- 1.2.1 Why Molecular Electronics -- 1.2.1.1 History of Computing -- 1.2.1.2 Moore's Law -- 1.2.1.3 Molecular Electronics: A Beyond‐CMOS Option -- 1.2.2 Molecular Materials for Organic Electronics -- 1.2.2.1 OLEDs -- 1.2.2.2 OFETs -- 1.2.2.3 OPVs -- 1.2.3 Molecules for Molecular‐Scale Electronics -- 1.3 Introduction to Nanogap Electrodes -- 1.4 Summary and Outlook -- References -- Chapter 2 Electron Transport in Single Molecular Devices -- 2.1 Introduction -- 2.2 General Methods -- 2.2.1 Transport Mechanisms -- 2.2.2 Nonequilibrium Green's Function Method -- 2.2.3 Master Equation Method -- 2.3 Single Electron Transport Through Single Molecular Junction -- 2.3.1 Coherent Transport -- 2.3.2 Hopping Transport -- 2.4 Effect of Many‐Body Interactions -- 2.4.1 Electron‐Vibration Interaction -- 2.4.1.1 Weak Coupling Regime -- 2.4.1.2 Strong‐Coupling Regime -- 2.4.2 Electron-Electron Interaction -- 2.4.2.1 Coulomb Blockade -- 2.4.2.2 Kondo Effect -- 2.5 Thermoelectric Transport -- 2.6 First‐Principles Simulations of Transport in Molecular Devices -- 2.7 Conclusions -- References -- Chapter 3 Fabricating Methods and Materials for Nanogap Electrodes -- 3.1 Introduction -- 3.2 Mechanical Controllable Break Junctions -- 3.3 Electrochemical and Chemical Deposition Method -- 3.3.1 Electroplating and Feedback System -- 3.3.2 Chemical Deposition -- 3.4 Oblique Angle Shadow Evaporation -- 3.5 Electromigration and Electrical Breakdown Method -- 3.5.1 Device Fabrication -- 3.5.2 Gap Size Control -- 3.5.3 Electromigration Applications -- 3.6 Molecular Scale Template -- 3.6.1 Molecular Rulers -- 3.6.2 Inorganic Films as Templates -- 3.6.3 On‐Wire Lithography -- 3.6.4 Nanowire Mask.; 3.7 Focused Ion Beam -- 3.8 Scanning Probe Lithography and Conducting Probe‐Atomic Force Microscopy -- 3.8.1 Destructive Way -- 3.8.2 Constructive Way -- 3.8.3 Conducting Probe‐Atomic Force Microscopy -- 3.9 Nanogap Electrodes Prepared with Nonmetallic Materials -- 3.9.1 Introduction -- 3.9.2 Nanogap Electrodes Made from Carbon Materials -- 3.9.2.1 Advantages of Carbon Materials -- 3.9.2.2 Carbon Nanotubes for Nanogap Electrodes -- 3.9.2.3 Graphene -- 3.9.2.4 Silicon Nanogap Electrodes -- 3.9.2.5 Other Materials -- 3.10 Summary and Outlook -- References -- Chapter 4 Characterization Methods and Analytical Techniques for Nanogap Junction -- 4.1 Current-Voltage Analysis -- 4.1.1 Coherent Tunneling Transport -- 4.1.2 Transition Voltage Spectroscopy -- 4.1.3 Incoherent Transport -- 4.2 Inelastic Tunneling Spectroscopy (IETS) -- 4.2.1 Principle and Measurement of IETS -- 4.2.2 Selection Rule and Charge Transport Pathway -- 4.2.3 Line Shape of the IETS -- 4.2.4 Application of the IETS -- 4.2.5 Mapping the Charge Transport Pathway in Protein Junction by IETS -- 4.2.6 STM Imaging by IETS -- 4.3 Optical and Optoelectronic Spectroscopy -- 4.4 Concluding Remarks -- References -- Chapter 5 Single‐Molecule Electronic Devices -- 5.1 Introduction -- 5.2 Wiring Molecules into "Gaps": Anchoring Groups and Assembly Methods -- 5.2.1 Anchor Groups -- 5.2.2 Effect of Anchor-Bridge Orbital Overlaps on Conductance -- 5.2.3 In Situ Chemical Reactions to Produce Covalent Contacts -- 5.3 Electrical Rectifier -- 5.3.1 Rectification Toward Diodes -- 5.3.2 General Mechanisms for Molecular Rectification -- 5.3.2.1 Aviram-Ratner Model -- 5.3.2.2 Kornilovitch-Bratkovsky-Williams Model -- 5.3.2.3 Datta-Paulsson Model -- 5.3.3 Rectification Originated from Molecules -- 5.3.3.1 D-σ-A and D-π-A Systems -- 5.3.3.2 D-A Diblock Molecular System.; 5.3.4 Rectification Stemming from Different Interfacial Coupling -- ; 5.3.4.1 Different Electrodes -- 5.3.4.2 Anchoring Groups -- 5.3.4.3 Contact Geometry -- 5.3.4.4 Interfacial Distance -- 5.3.5 Additional Molecular Rectifiers -- 5.4 Conductance Switches -- 5.4.1 Voltage Pulse Induced Switches -- 5.4.2 Light‐Induced Switching -- 5.4.3 Switching Triggered by Chemical Process (Redox and pH) -- 5.4.4 Spintronics‐Based Switch -- 5.5 Gating the Transport: Transistor‐Like Single‐Molecule Devices -- 5.5.1 Electrostatic Gate Control -- 5.5.2 Side Gating -- 5.5.3 Electrochemical Gate Control -- 5.5.4 Molecular Quantum Dots -- 5.6 Challenges and Outlooks -- References -- Chapter 6 Molecular Electronic Junctions Based on Self‐Assembled Monolayers -- 6.1 Introduction -- 6.2 Molecular Monolayers for Molecular Electronics Devices -- 6.2.1 Monolayers Covalently Bonded to Noble Metals -- 6.2.2 Monolayers Attached to Non‐metal Substrates -- 6.2.3 Langmuir-Blodgett Method -- 6.3 Top Electrodes -- 6.3.1 Deposited Metal -- 6.3.1.1 Direct Evaporation -- 6.3.1.2 Indirect Evaporation -- 6.3.2 Make Top Contact by Soft Methods -- 6.3.2.1 Lift‐and‐Float Approach -- 6.3.2.2 Crosswire Junction -- 6.3.2.3 Transfer Printing -- 6.3.2.4 Graphene as Top Electrode -- 6.3.2.5 Liquid Metal Contact -- 6.4 Experimental Progress with Ensemble Molecular Junctions -- 6.5 Outlook -- References -- Chapter 7 Toward Devices and Applications -- 7.1 Introduction -- 7.2 Major Issues: Reliability and Robustness -- 7.2.1 Single Molecular Device -- 7.2.1.1 Top‐Contact Junctions -- 7.2.1.2 Planar Metallic Nanogap Electrodes -- 7.2.1.3 Planar Nanogap Electrodes Based on Single Walled Carbon Nanotubes (SWCNTs) or Graphene -- 7.2.1.4 The Absorption of Molecule on the Surface of SWCNTs or Graphene -- 7.2.2 Molecular Device Based on Molecule Monolayer -- 7.2.2.1 Bottom Electrodes.; 7.2.2.2 Insulating Layer with Holes to Define the Size of the Bottom Electrodes -- 7.2.2.3 Molecule Monolayer Formation -- 7.2.2.4 Top Electrodes -- 7.3 Potential Integration Solutions -- 7.3.1 Carbon Nanotube or Graphene Interconnects -- 7.3.2 Self‐Assembled Monolayers for Integrated Molecular Junctions -- 7.3.3 Cross Bar Architecture -- 7.4 Beyond Simple Charge Transport -- 7.4.1 Mechanics -- 7.4.2 Thermoelectronics -- 7.4.3 Quantum Interference -- 7.4.4 Spintronics -- 7.4.4.1 SAM‐Based Magnetic Tunnel Junctions -- 7.4.4.2 Molecule Based Spin‐Valves or Magnetic Tunnel Junctions -- 7.4.4.3 Single Molecular Spin Transistor -- 7.4.4.4 Single Molecular Nuclear Spin Transistor -- 7.4.4.5 Molecule Based Hybrid Spintronic Devices -- 7.5 Electrochemistry with Nanogap Electrodes -- References -- Index -- EULA.