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Record Nr. |
UNINA9910829999903321 |
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Autore |
Kursun Volkan |
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Titolo |
Multi-voltage CMOS circuit design [[electronic resource] /] / Volkan Kursun, Eby G. Friedman |
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Pubbl/distr/stampa |
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Chichester, England ; ; Hoboken, NJ, : John Wiley, 2006 |
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ISBN |
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1-280-64869-4 |
9786610648696 |
0-470-03337-1 |
0-470-01024-X |
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Descrizione fisica |
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1 online resource (243 p.) |
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Altri autori (Persone) |
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Disciplina |
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Soggetti |
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Metal oxide semiconductors, Complementary |
Low voltage integrated circuits - Design and construction |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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Note generali |
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Description based upon print version of record. |
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Nota di bibliografia |
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Includes bibliographical references and index. |
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Nota di contenuto |
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Multi-voltage CMOS Circuit Design; Contents; About the Authors; Preface; Acknowledgments; Chapter 1 Introduction; 1.1 Evolution of Integrated Circuits; 1.2 Outline of the Book; Chapter 2 Sources of Power Consumption in CMOS ICs; 2.1 Dynamic Switching Power; 2.2 Leakage Power; 2.2.1 Subthreshold Leakage Current; 2.2.1.1 Short-Channel Effects; 2.2.1.2 Drain-Induced Barrier-Lowering; 2.2.1.3 Characterization of Subthreshold Leakage Current; 2.2.2 Gate Oxide Leakage Current; 2.2.2.1 Effect of Technology Scaling on Gate Oxide Leakage; 2.2.2.2 Characterization of Gate Oxide Leakage Current |
2.2.2.3 Alternative Gate Dielectric Materials2.3 Short-Circuit Power; 2.4 Static DC Power; Chapter 3 Supply and Threshold Voltage Scaling Techniques; 3.1 Dynamic Supply Voltage Scaling; 3.2 Multiple Supply Voltage CMOS; 3.3 Threshold Voltage Scaling; 3.3.1 Body Bias Techniques; 3.3.1.1 Reverse Body Bias; 3.3.1.2 Forward Body Bias; 3.3.1.3 Bidirectional Body Bias; 3.3.2 Multiple Threshold Voltage CMOS; 3.4 Multiple Supply and Threshold Voltage CMOS; 3.5 Dynamic Supply and Threshold Voltage Scaling; 3.6 Circuits with Multiple Voltage and Clock Domains; 3.7 Summary |
Chapter 4 Low-Voltage Power Supplies4.1 Linear DC-DC Converters; |
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