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1. |
Record Nr. |
UNINA990009614960403321 |
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Autore |
Schmoller, Gustav Friedrich von <1838-1917> |
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Titolo |
Lineamenti di economia nazionale generale / di Gustavo Schmoller ; traduzione italiana dell'avvocato Lodovico Eusebio |
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Pubbl/distr/stampa |
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Torino : Unione tipografico-editrice torinese, 1919 |
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Descrizione fisica |
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Collana |
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Biblioteca dell'economista , 4. ser. ; 0010 |
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Disciplina |
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Locazione |
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Collocazione |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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2. |
Record Nr. |
UNISA990000851830203316 |
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Titolo |
La pittura spagnola / [a cura di Alfonso E. Perez Sanchez] |
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Pubbl/distr/stampa |
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ISBN |
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Descrizione fisica |
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Collocazione |
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XII.2.A. 333/1.1(VII P 395/1 1) |
XII.2.A. 333/1.2(VII P 395/1 2) |
XVII A. 2400 2 |
XVII A. 2400 1 |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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3. |
Record Nr. |
UNINA9910827660703321 |
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Autore |
Prince Betty |
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Titolo |
Vertical 3D memory technologies / / Betty Prince |
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Pubbl/distr/stampa |
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Chichester, England : , : Wiley, , 2014 |
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©2014 |
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ISBN |
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1-118-76046-8 |
1-118-76047-6 |
1-118-76045-X |
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Edizione |
[1st edition] |
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Descrizione fisica |
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1 online resource (371 p.) |
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Disciplina |
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Soggetti |
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Three-dimensional integrated circuits |
Semiconductor storage devices |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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Note generali |
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Description based upon print version of record. |
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Nota di bibliografia |
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Includes bibliographical references and index. |
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Nota di contenuto |
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Vertical 3D Memory Technologies; Contents; Acknowledgments; 1 Basic Memory Device Trends Toward the Vertical; 1.1 Overview of 3D Vertical Memory Book; 1.2 Moore's Law and Scaling; 1.3 Early RAM 3D Memory; 1.3.1 SRAM as the First 3D Memory; 1.3.2 An Early 3D Memory-The FinFET SRAM; 1.3.3 Early Progress in 3D DRAM Trench and Stack Capacitors; 1.3.4 3D as the Next Step for Embedded RAM; 1.4 Early Nonvolatile Memories Evolve to 3D; 1.4.1 NOR Flash Memory-Both Standalone and Embedded; 1.4.2 The Charge-Trapping EEPROM; 1.4.3 Thin-Film Transistor Takes Nonvolatile Memory into 3D |
1.4.4 3D Microcontroller Stacks with Embedded SRAM and EEPROM1.4.5 NAND Flash Memory as an Ideal 3D Memory; 1.5 3D Cross-Point Arrays with Resistance RAM; 1.6 STT-MTJ Resistance Switches in 3D; 1.7 The Role of Emerging Memories in 3D Vertical Memories; References; 2 3D Memory Using Double-Gate, Folded, TFT, and Stacked Crystal Silicon; 2.1 Introduction; 2.2 FinFET-Early Vertical Memories; 2.2.1 Early FD-SOI FinFET Charge-Trapping Flash Memory; 2.2.2 FinFET Charge-Trapping Memory on Bulk Silicon; 2.2.3 Doubling Memory Density Using a Paired FinFET Bit-Line Structure |
2.2.4 Other Folded Gate Memory Structures and Characteristics2.3 Double-Gate and Tri-Gate Flash; 2.3.1 Vertical Channel Double Floating |
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Gate Flash Memory; 2.3.2 Early Double- and Tri-Gate FinFET Charge-Trapping Flash Memories; 2.3.3 Double-Gate Dopant-Segregated Schottky Barrier CT FinFET Flash; 2.3.4 Independent Double-Gate FinFET CT Flash Memory; 2.4 Thin-Film Transistor (TFT) Nonvolatile Memory with Polysilicon Channels; 2.4.1 Independent Double-Gate Memory with TFT and Polysilicon Channels; 2.4.2 TFT Polysilicon Channel NV Memory Using Silicon Protrusions to Enhance Performance |
2.4.3 An Improved Polysilicon Channel TFT for Vertical Transistor NAND Flash2.4.4 Polysilicon TFT CT Memory with Vacuum Tunneling and Al2O3 Blocking Oxide; 2.4.5 Graphene Channel NV Memory with Al2O3-HfOx-Al2O3 Storage Layer; 2.5 Double-Gate Vertical Channel Flash Memory with Engineered Tunnel Layer; 2.5.1 Double-Gate Vertical Single-Crystal Silicon Channel with Engineered Tunnel Layer; 2.5.2 Polysilicon Substrate TFT CT NAND with Engineered Tunnel Layer; 2.5.3 Polysilicon Channel Double-Layer Stacked TFT NAND Bandgap-Engineered Flash |
2.5.4 Eight-Layer 3D Vertical DG TFT NAND Flash with Junctionless Buried Channel2.5.5 Variability in Polysilicon TFT for 3D Vertical Gate NAND Flash; 2.6 Stacked Gated Twin-Bit (SGTB) CT Flash; 2.7 Crystalline Silicon and Epitaxial Stacked Layers; 2.7.1 Stacked Crystalline Silicon Layer TFT for Six-Transistor SRAM Cell Technology; 2.7.2 Stacked Silicon Layer S3 Process for Production SRAM; 2.7.3 NAND Flash Memory Development Using Double-Stacked S3 Technology; 2.7.4 4Gb NAND Flash Memory in 45 nm 3D Double-Stacked S3 Technology; References; 3 Gate-All-Around (GAA) Nanowire for Vertical Memory |
3.1 Overview of GAA Nanowire Memories |
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Sommario/riassunto |
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The large scale integration and planar scaling of individual system chips is reaching an expensive limit. If individual chips now, and later terrabyte memory blocks, memory macros, and processing cores, can be tightly linked in optimally designed and processed small footprint vertical stacks, then performance can be increased, power reduced and cost contained. This book reviews for the electronics industry engineer, professional and student the critical areas of development for 3D vertical memory chips including: gate-all-around and junction-less nanowire memories, stacked thin film and doubl |
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