Electrical engineering materials [[electronic resource] /] / T.K. Basak

• Record Nr.: UNINA9910825752903321
• Autore: Basak T. K
• Pubbl/distr/stampa: Tunbridge Wells, : New Academic Science, c2012
• Edizione: [1st ed.]
• Descrizione fisica: ix, 192 p. : ill. (some col.)
• Soggetti: Electric apparatus and appliances; Electrical engineering - Materials
• Lingua di pubblicazione: Inglese
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Note generali: Bibliographic Level Mode of Issuance: Monograph
• Nota di bibliografia: Includes bibliographical references (p. [188]) and index.
• Nota di contenuto: Cover -- Preface -- Contents -- Chapter 1 Introduction -- 1.1 Introduction -- 1.2 The Hydrogen Atom in the Light of Quantum Mechanics -- 1.3 Nomenclature Pertaining to Electronic States -- 1.4 The Electron Spin and Pauli's Exclusion Principle -- 1.5 Potential Barrier Problems -- 1.6 Fermi-Dirac Distribution Function -- 1.7 The Atomic Bonds -- 1.8 Crystal Structure in Atoms -- Chapter 2 Magnetic Materials -- 2.1 Introduction -- 2.2 Classification of Magnetic Materials -- 2.3 Atomic Concept of Ferromagnetism -- 2.4 Magnetic Property of Crystallographic Materials -- 2.5 Broad Classification of Magnetic Materials -- 2.6 Temperature Dependence of Conductivity of Materials -- 2.7 Magnetostriction -- 2.8 Magnetic Bubble Memory -- 2.9 Magnetic Anisotropy -- Chapter 3 Semiconductors -- 3.1 Introduction -- 3.2 Band Theory of Solids -- 3.3 Electron Hole Pairs -- 3.4 Semiconductor Materials -- 3.5 Doping of Semiconductor -- 3.6 Types of Semiconductors -- 3.7 Doped Semiconductors -- 3.8 Carrier Concentrations -- 3.9 Required Purity and Perfection of Semiconductor Materials -- 3.10 Carrier Generation and Recombination -- 3.11 Carrier Actions - Drift Current -- 3.12 Diffusion Current -- 3.13 Bands for Doped Semiconductors -- 3.14 Einstein Relation -- 3.15 Non-Equilibrium Currents -- 3.16 Pure Diffusion Currents -- 3.17 General Band-Bending and Debye Length -- 3.18 Dielectric Relaxation Time -- 3.19 Organic Semiconductor -- Chapter 4 Semiconductor Devices -- 4.1 Introduction -- 4.2 Semiconductor Device Fundamentals -- 4.3 Semiconductor Device Materials -- 4.4 List of Common Semiconductor ; Devices -- 4.5 p-n Junctions -- 4.6 Diode -- 4.7 Transistors -- 4.8 MOSFET (Metal Oxide Semiconductor Field Effect Transistor) -- 4.9 Thermistor -- 4.10 Semiconductor Fabrication -- Chapter 5 Superconductors -- 5.1 Introduction -- 5.2 History of Superconductors.; 5.3 The Meissner Effect -- 5.4 Quantum Superconducting Effects -- 5.5 Flux Quantization -- 5.6 Type-1 Superconductors -- 5.7 Type-2 Superconductors -- 5.8 High Temperature Superconductors -- 5.9 Energy Gap in Superconductors as a Function of Temperature -- 5.10 Vanadium Heat Capacity -- 5.11 Exponential Heat Capacity -- 5.12 Superconductor Terminology and the Naming Scheme -- 5.13 Application of Superconductors -- 5.14 Typical Superconductors and the Future -- Chapter 6 Insulating Materials -- 6.1 Introduction -- 6.2 Dielectric Properties of Insulating Materials -- 6.3 Various Types of Polarization in Dielectrics -- 6.4 Thermal Properties of Insulators -- 6.5 Chemical Properties of Insulators -- References -- Index.