|
|
|
|
|
|
|
|
1. |
Record Nr. |
UNINA9910821665003321 |
|
|
Autore |
Baliga B. Jayant <1948-> |
|
|
Titolo |
Silicon carbide power devices / / B. Jayant Baliga |
|
|
|
|
|
Pubbl/distr/stampa |
|
|
New Jersey, : World Scientific, c2005 |
|
|
|
|
|
|
|
ISBN |
|
|
|
|
|
|
Edizione |
[1st ed.] |
|
|
|
|
|
Descrizione fisica |
|
1 online resource (xxi, 503 p. ) : ill. (some col.) |
|
|
|
|
|
|
Disciplina |
|
|
|
|
|
|
Soggetti |
|
Silicon carbide - Electric properties |
Semiconductors |
|
|
|
|
|
|
|
|
Lingua di pubblicazione |
|
|
|
|
|
|
Formato |
Materiale a stampa |
|
|
|
|
|
Livello bibliografico |
Monografia |
|
|
|
|
|
Note generali |
|
Bibliographic Level Mode of Issuance: Monograph |
|
|
|
|
|
|
Nota di bibliografia |
|
Includes bibliographical references and index. |
|
|
|
|
|
|
Nota di contenuto |
|
ch. 1. Introduction -- ch. 2. Material properties and technology -- ch. 3. Breakdown voltage -- ch. 4. PiN rectifiers -- ch. 5. Schottky rectifiers -- ch. 6. Shielded Schottky rectifiers -- ch. 7. Metal-semiconductor field effect transistors -- ch. 8. The Baliga-pair configuration -- ch. 9. Planar power MOSFETs -- ch. 10. Shielded planar MOSFETs -- ch. 11. Trench-gate power MOSFETs -- ch. 12. Shielded trench-gate power MOSFETs -- ch. 13. Charge coupled structures -- ch. 14. Integral diodes -- ch. 15. Lateral high voltage FETs -- ch. 16. Synopsis. |
|
|
|
|
|
|
|