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1. |
Record Nr. |
UNINA9910495761103321 |
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Autore |
Augereau Flore |
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Titolo |
Charlotte Delbo : Œuvre et engagements / Christiane Page |
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Pubbl/distr/stampa |
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Rennes, : Presses universitaires de Rennes, 2018 |
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ISBN |
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Descrizione fisica |
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1 online resource (334 p.) |
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Altri autori (Persone) |
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Bernard-NouraudPaul |
BodyJacques |
BottF |
BourdonnecValérie Le |
BrodziakSylvie |
BrunetauxAudrey |
CaronDavid |
Chiappone-LucchesiMagali |
ClossonMarianne |
CoquioCatherine |
CorbelLaurence |
FroloffNathalie |
GradvohlPaul |
HuthwohlJoël |
KoretzkyCarolina |
KremskiA |
Lyon-CaenJudith |
MarquartSharon |
MarteauFrédéric |
MokJung-Weon |
PageChristiane |
PanhRithy |
ParrauAlain |
PeyrottesC.-A |
Riera-ColletC |
RuffiniE |
RuffiniElisabetta |
StuparMileva |
ThatcherNicole |
ThouvenelY |
VeilhanF |
VeilhanFrançois |
WieviorkaA |
WieviorkaAnnette |
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Soggetti |
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Theater |
théâtre |
littérature |
Résistance |
théâtre et histoire |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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Sommario/riassunto |
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Le parcours de Charlotte Delbo (1913-1985), femme de lettres et assistante de Jouvet, est exceptionnel. Résistante, déportée à Auschwitz-Birkenau puis à Ravensbrück, elle survit. Ainsi que l'écrit Joël Huthwohl dans la préface de cet ouvrage, « il y a soixante-dix ans s'ébranlait le convoi du 24 janvier. Il y a quarante-huit ans paraissait Aucun de nous ne reviendra. Il y a vingt-huit ans elle mourait. Insensiblement sa vie s'éloigne comme disparaissent ceux qui disaient : “pendant la guerre, je…”, “à Auschwitz, nous…”. […] Nous passons avec une certaine appréhension le seuil fragile après lequel nous continuerons sans les témoins. » Il s'agit donc d'assurer la transmission de son œuvre, mission que s'était donnée Claudine Riera-Collet (aujourd'hui décédée) fondatrice de l'association Les Amis de Charlotte Delbo et à l'initiative du colloque international de mars 2013 à la BnF et à la Comédie-Française. On limite souvent son œuvre aux textes sur la déportation, or elle traite aussi des événements de son époque. Son entrée officielle dans la littérature se fait avec Les Belles Lettres (1961) recueil de textes contre la guerre d'Algérie. Suit, le premier tome de la trilogie d'Auschwitz et après : Aucun de nous ne reviendra (1965), écrit à son retour en 1945. Avec Le Convoi du 24 janvier (1965), la trilogie fait saisir l'horreur de la barbarie mais aussi la solidarité des déportées qui se soutiennent dans la détermination d'un acte à accomplir : rentrer pour porter ce qu'elles ont vécu à la connaissance du monde. À l'avant-garde des recherches esthétiques de l'après-guerre, sa recherche formelle, marquée par sa rencontre avec Jouvet, la conduit vers une écriture à dire et à entendre. Elle choisit progressivement le théâtre et la poésie pour rendre compte de l'irreprésentable d'Auschwitz : Qui rapportera ces paroles ? (1966), Et toi, comment as-tu fait ? (1971). Ces textes, avec Ceux qui avaient choisi, Les Hommes, Kalavrita des mille Antigone, La Mémoire et les… |
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2. |
Record Nr. |
UNINA9910821633803321 |
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Autore |
Ma Xu <1983-> |
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Titolo |
Computational lithography / / Xu Ma and Gonzalo R. Arce |
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Pubbl/distr/stampa |
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Oxford, : Wiley-Blackwell, 2010 |
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ISBN |
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9786612755965 |
9781118043578 |
111804357X |
9781282755963 |
128275596X |
9780470618943 |
0470618949 |
9780470618936 |
0470618930 |
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Edizione |
[1st edition] |
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Descrizione fisica |
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1 online resource (244 p.) |
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Collana |
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Wiley series in pure and applied optics |
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Altri autori (Persone) |
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Disciplina |
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Soggetti |
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Microlithography - Mathematics |
Integrated circuits - Design and construction - Mathematics |
Photolithography - Mathematics |
Semiconductors - Etching - Mathematics |
Resolution (Optics) |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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Note generali |
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Description based upon print version of record. |
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Nota di bibliografia |
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Includes bibliographical references and index. |
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Nota di contenuto |
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Computational Lithography -- Contents -- Preface -- Acknowledgments -- Acronyms -- 1 Introduction -- 1.1 OPTICAL LITHOGRAPHY -- 1.1.1 Optical Lithography and Integrated Circuits -- 1.1.2 Brief History of Optical Lithography Systems -- 1.2 RAYLEIGH'S RESOLUTION -- 1.3 RESIST PROCESSES AND CHARACTERISTICS -- 1.4 TECHNIQUES IN COMPUTATIONAL LITHOGRAPHY -- 1.4.1 Optical Proximity Correction -- 1.4.2 Phase-Shifting Masks -- 1.4.3 Off-Axis Illumination -- 1.4.4 Second-Generation RETs -- 1.5 OUTLINE -- 2 Optical Lithography Systems -- 2.1 PARTIALLY COHERENT IMAGING SYSTEMS -- 2.1.1 Abbe's Model -- 2.1.2 Hopkins Diffraction Model -- 2.1.3 Coherent and Incoherent Imaging Systems -- 2.2 |
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APPROXIMATION MODELS -- 2.2.1 Fourier Series Expansion Model -- 2.2.2 Singular Value Decomposition Model -- 2.2.3 Average Coherent Approximation Model -- 2.2.4 Discussion and Comparison -- 2.3 SUMMARY -- 3 Rule-Based Resolution Enhancement Techniques -- 3.1 RET TYPES -- 3.1.1 Rule-Based RETs -- 3.1.2 Model-Based RETs -- 3.1.3 Hybrid RETs -- 3.2 RULE-BASED OPC -- 3.2.1 Catastrophic OPC -- 3.2.2 One-Dimensional OPC -- 3.2.3 Line-Shortening Reduction OPC -- 3.2.4 Two-Dimensional OPC -- 3.3 RULE-BASED PSM -- 3.3.1 Dark-Field Application -- 3.3.2 Light-Field Application -- 3.4 RULE-BASED OAI -- 3.5 SUMMARY -- 4 Fundamentals of Optimization -- 4.1 DEFINITION AND CLASSIFICATION -- 4.1.1 Definitions in the Optimization Problem -- 4.1.2 Classification of Optimization Problems -- 4.2 UNCONSTRAINED OPTIMIZATION -- 4.2.1 Solution of Unconstrained Optimization Problem -- 4.2.2 Unconstrained Optimization Algorithms -- 4.3 SUMMARY -- 5 Computational Lithography with Coherent Illumination -- 5.1 PROBLEM FORMULATION -- 5.2 OPC OPTIMIZATION -- 5.2.1 OPC Design Algorithm -- 5.2.2 Simulations -- 5.3 TWO-PHASE PSM OPTIMIZATION -- 5.3.1 Two-Phase PSM Design Algorithm -- 5.3.2 Simulations. |
5.4 GENERALIZED PSM OPTIMIZATION -- 5.4.1 Generalized PSM Design Algorithm -- 5.4.2 Simulations -- 5.5 RESIST MODELING EFFECTS -- 5.6 SUMMARY -- 6 Regularization Framework -- 6.1 DISCRETIZATION PENALTY -- 6.1.1 Discretization Penalty for OPC Optimization -- 6.1.2 Discretization Penalty for Two-Phase PSM Optimization -- 6.1.3 Discretization Penalty for Generalized PSM Optimization -- 6.2 COMPLEXITY PENALTY -- 6.2.1 Total Variation Penalty -- 6.2.2 Global Wavelet Penalty -- 6.2.3 Localized Wavelet Penalty -- 6.3 SUMMARY -- 7 Computational Lithography with Partially Coherent Illumination -- 7.1 OPC OPTIMIZATION -- 7.1.1 OPC Design Algorithm Using the Fourier Series Expansion Model -- 7.1.2 Simulations Using the Fourier Series Expansion Model -- 7.1.3 OPC Design Algorithm Using the Average Coherent Approximation Model -- 7.1.4 Simulations Using the Average Coherent Approximation Model -- 7.1.5 Discussion and Comparison -- 7.2 PSM OPTIMIZATION -- 7.2.1 PSM Design Algorithm Using the Singular Value Decomposition Model -- 7.2.2 Discretization Regularization for PSM Design Algorithm -- 7.2.3 Simulations -- 7.3 SUMMARY -- 8 Other RET Optimization Techniques -- 8.1 DOUBLE-PATTERNING METHOD -- 8.2 POST-PROCESSING BASED ON 2D DCT -- 8.3 PHOTORESIST TONE REVERSING METHOD -- 8.4 SUMMARY -- 9 Source and Mask Optimization -- 9.1 LITHOGRAPHY PRELIMINARIES -- 9.2 TOPOLOGICAL CONSTRAINT -- 9.3 SOURCE-MASK OPTIMIZATION ALGORITHM -- 9.4 SIMULATIONS -- 9.5 SUMMARY -- 10 Coherent Thick-Mask Optimization -- 10.1 KIRCHHOFF BOUNDARY CONDITIONS -- 10.2 BOUNDARY LAYER MODEL -- 10.2.1 Boundary Layer Model in Coherent Imaging Systems -- 10.2.2 Boundary Layer Model in Partially Coherent Imaging Systems -- 10.3 LITHOGRAPHY PRELIMINARIES -- 10.4 OPC OPTIMIZATION -- 10.4.1 Topological Constraint -- 10.4.2 OPC Optimization Algorithm Based on BL Model Under Coherent Illumination. |
10.4.3 Simulations -- 10.5 PSM OPTIMIZATION -- 10.5.1 Topological Constraint -- 10.5.2 PSM Optimization Algorithm Based on BL Model Under Coherent Illumination -- 10.5.3 Simulations -- 10.6 SUMMARY -- 11 Conclusions and New Directions of Computational Lithography -- 11.1 CONCLUSION -- 11.2 NEW DIRECTIONS OF COMPUTATIONAL LITHOGRAPHY -- 11.2.1 OPC Optimization for the Next-Generation Lithography Technologies -- 11.2.2 Initialization Approach for the Inverse Lithography Optimization -- 11.2.3 Double Patterning and Double Exposure Methods in Partially Coherent Imaging System -- |
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11.2.4 OPC and PSM Optimizations for Inverse Lithography Based on Rigorous Mask Models in Partially Coherent Imaging System -- 11.2.5 Simultaneous Source and Mask Optimization for Inverse Lithography Based on Rigorous Mask Models -- 11.2.6 Investigation of Factors Influencing the Complexity of the OPC and PSM Optimization Algorithms -- Appendix A: Formula Derivation in Chapter 5 -- Appendix B: Manhattan Geometry -- Appendix C: Formula Derivation in Chapter 6 -- Appendix D: Formula Derivation in Chapter 7 -- Appendix E: Formula Derivation in Chapter 8 -- Appendix F: Formula Derivation in Chapter 9 -- Appendix G: Formula Derivation in Chapter 10 -- Appendix H: Software Guide -- References -- Index. |
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Sommario/riassunto |
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A Unified Summary of the Models and Optimization Methods Used in Computational Lithography Optical lithography is one of the most challenging areas of current integrated circuit manufacturing technology. The semiconductor industry is relying more on resolution enhancement techniques (RETs), since their implementation does not require significant changes in fabrication infrastructure. Computational Lithography is the first book to address the computational optimization of RETs in optical lithography, providing an in-depth discussion of optimal optical proximity correction (OPC), phase shifting mask (PSM), and off-axis illumination (OAI) RET tools that use model-based mathematical optimization approaches. The book starts with an introduction to optical lithography systems, electric magnetic field principles, and the fundamentals of optimization from a mathematical point of view. It goes on to describe in detail different types of optimization algorithms to implement RETs. Most of the algorithms developed are based on the application of the OPC, PSM, and OAI approaches and their combinations. Algorithms for coherent illumination as well as partially coherent illumination systems are described, and numerous simulations are offered to illustrate the effectiveness of the algorithms. In addition, mathematical derivations of all optimization frameworks are presented. The accompanying MATLAB® software files for all the RET methods described in the book make it easy for readers to run and investigate the codes in order to understand and apply the optimization algorithms, as well as to design a set of optimal lithography masks. The codes may also be used by readers for their research and development activities in their academic or industrial organizations. An accompanying MATLAB® software guide is also included. An accompanying MATLAB® software guide is included, and readers can download the software to use with the guide at ftp://ftp.wiley.com/public/sci_tech_med/computational_lithography . Tailored for both entry-level and experienced readers, Computational Lithography is meant for faculty, graduate students, and researchers, as well as scientists and engineers in industrial organizations whose research or career field is semiconductor IC fabrication, optical lithography, and RETs. Computational lithography draws from the rich theory of inverse problems, optics, optimization, and computational imaging; as such, the book is also directed to researchers ... |
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