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Record Nr. |
UNINA9910819126403321 |
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Autore |
Hoffmann Kurt <1951-> |
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Titolo |
System integration [[electronic resource] ] : from transistor design to large scale integrated circuits / / Kurt Hoffmann |
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Pubbl/distr/stampa |
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Chichester, West Sussex, England ; ; Hoboken, NJ, : John Wiley & Sons, c2004 |
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ISBN |
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1-280-27506-5 |
9786610275069 |
0-470-02069-5 |
0-470-02071-7 |
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Edizione |
[1st ed.] |
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Descrizione fisica |
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1 online resource (512 p.) |
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Disciplina |
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Soggetti |
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Systems on a chip |
Integrated circuits |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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Note generali |
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Description based upon print version of record. |
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Nota di bibliografia |
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Includes bibliographical references and index. |
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Nota di contenuto |
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System Integration; Contents; Preface; Acknowledgments; Physical Constants and Conversion Factors; Symbols; 1 Semiconductor Physics; 1.1 Band Theory of Solids; 1.2 Doped Semiconductor; 1.3 Semiconductor in Equilibrium; 1.3.1 Fermi-Dirac Distribution Function; 1.3.2 Carrier Concentration at Equilibrium; 1.3.3 Density Product at Equilibrium; 1.3.4 Relationship between Energy, Voltage, and Electrical Field; 1.4 Charge Transport; 1.4.1 Drift Velocity; 1.4.2 Drift Current; 1.4.3 Diffusion Current; 1.4.4 Continuity Equation; 1.5 Non-Equilibrium Conditions; Problems; References; Further Reading |
2 pn-Junction2.1 Inhomogeneously Doped n-type Semiconductor; 2.2 pn-Junction at Equilibrium; 2.3 Biased pn-Junction; 2.3.1 Density Product under Non-Equilibrium Conditions; 2.3.2 Current-Voltage Relationship; 2.3.3 Deviation from the Current-Voltage Relationship; 2.3.4 Voltage Reference Point; 2.4 Capacitance Characteristic; 2.4.1 Depletion Capacitance; 2.4.2 Diffusion Capacitance; 2.5 Switching Characteristic; 2.6 Junction Breakdown; 2.7 Modeling the pn-Junction; 2.7.1 Diode Model for CAD Applications; 2.7.2 Diode Model for Static Calculations; 2.7.3 Diode Model for Small-Signal Calculations |
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