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Record Nr. |
UNINA9910815238903321 |
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Titolo |
Silicon technologies [[electronic resource] ] : ion implantation and thermal treatment / / edited by Annie Baudrant |
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Pubbl/distr/stampa |
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London, : ISTE |
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Hoboken, N.J., : Wiley, 2011 |
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ISBN |
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1-118-60104-1 |
1-118-60114-9 |
1-118-60111-4 |
1-299-18753-6 |
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Edizione |
[1st edition] |
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Descrizione fisica |
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1 online resource (357 p.) |
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Collana |
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Altri autori (Persone) |
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Disciplina |
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Soggetti |
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Semiconductor doping |
Ion implantation |
Semiconductors - Heat treatment |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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Note generali |
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Description based upon print version of record. |
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Nota di bibliografia |
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Includes bibliographical references and index. |
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Nota di contenuto |
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Cover; Title Page; Copyright Page; Table of Contents; Preface; Chapter 1. Silicon and Silicon Carbide Oxidation; 1.1. Introduction; 1.2. Overview of the various oxidation techniques; 1.2.1. General information; 1.2.2. Most frequently used methods in the semiconductor industry; 1.2.3. Other methods; 1.3. Some physical properties of silica; 1.3.1. The silica structure; 1.3.2. Three useful parameters of silica; 1.3.3. Transport properties in silica; 1.4. Equations of atomic transport during oxidation; 1.4.1. Transport equations in the general case |
1.5.5. Experimental results and conclusions on the transport mechanisms during the anodic oxidation of silicon1.5.6. Important experimental results from dry SiC thermal oxidation; 1.6. Transport equations in the case of thermal oxidation; 1.6.1. General information on flux and on growth kinetics; 1.6.2. Flux calculation for neutral mobile species; 1.6.3. Flux calculation for ion mobile species; 1.7. Deal and Grove theory of thermal oxidation; 1.7.1. Flux calculation; 1.7.2. Growth kinetics equations; 1.7.3. Remarks on the fluctuations of the oxidation constants kP and kL |
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