1.

Record Nr.

UNINA9910814604803321

Autore

Arora N (Narain), <1943->

Titolo

Mosfet modeling for VLSI simulation : theory and practice / / Narain Arora

Pubbl/distr/stampa

Singapore, : World Scientific, c2007

ISBN

1-281-12088-X

9786611120887

981-270-758-1

Edizione

[1st ed.]

Descrizione fisica

1 online resource (633 p.)

Collana

International series on advances in solid state electronics and technology

Disciplina

621.395

Soggetti

Metal oxide semiconductor field-effect transistors

Integrated circuits - Very large scale integration

Integrated circuits - Very large scale integration - Computer simulation

Lingua di pubblicazione

Inglese

Formato

Materiale a stampa

Livello bibliografico

Monografia

Note generali

Description based upon print version of record.

Nota di bibliografia

Includes bibliographical references and index.

Nota di contenuto

Foreword; Preface; Contents; List of Symbols; Acronyms; 1 Overview; 2 Review of Basic Semiconductor and pn Junction Theory; 3 MOS Transistor Structure and Operation; 4 MOS Capacitor; 5 Threshold Voltage; 6 MOSFET DC Model; 7 Dynamic Model; 8 Modeling Hot-Carrier Effects; 9 Data Acquisition and Model Parameter Measurements; 10 Model Parameter Extraction Using Optimization Method; 11 SPICE Diode and MOSFET Models and Their Parameters; 12 Statistical Modeling and Worst-case Design Parameters; Appendix A. Important Properties of Silicon, Silicon Dioxide and Silicon Nitride at 300K

Appendix B. Some Important Physical Constants at 300 KAppendix C. Unit Conversion Factors; Appendix D. Magnitude Prefixes; Appendix E. Methods of Calculating s from the Implicit Eq. (6.23) or (6.30); Appendix F. Charge Based MOSFET Intrinsic Capacitances; Appendix G. Linear Regression; Appendix H. Basic Statistical and Probability Theory; Appendix I. List of Widely Used Statistical Package Programs; 862-X1-missing.pdf; Subject Index

Sommario/riassunto

A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college



and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required