Active-matrix organic light-emitting display technologies / / by Shuming Chen [and four others]

• Record Nr.: UNINA9910808185903321
• Pubbl/distr/stampa: Sharjah, United Arab Emirates : , : Bentham Science Publishers Ltd., , [2014]; ©[2014]
• ISBN: 1-68108-120-2
• Descrizione fisica: 1 online resource (211 p.)
• Collana: Frontiers in Electrical Engineering, , 2452-1442 ; ; Volume 1
• Disciplina: 621.381522
• Soggetti: Light emitting diodes
• Lingua di pubblicazione: Inglese
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Note generali: Description based upon print version of record.
• Nota di bibliografia: Includes bibliographical references at the end of each chapters and index.
• Nota di contenuto: CONTENTS; PREFACE ; LIST OF CONTRIBUTORS ; Introduction to Organic Light-Emitting Display Technologies ; INTRODUCTION; DEVELOPEMNT HISTORY OF OLEDS; BASIC PHYSICS OF OLEDS; Charge Carriers Injection; Charge Carriers Transportation ; Exciton Formation and Recombination ; Light Extraction from Devices ; FABRICATION AND CHARACTERIZATION OF OLEDS; APPLICATION OF OLEDS; Flat Panel Display; Solid-state Lighting; CONFLICT OF INTEREST; ACKNOWLEDGMENTS; REFERENCES; White Organic Light-Emitting Diodes for Display and Lighting Application ; WOLEDS FOR FULL COLOR DISPLAYS; WOLEDS FOR SOLID-STATE LIGHTING; APPROACHES TO WHITE LIGHT EMISSIONMulti-emissive Layers; Single-emissive Layer; WOLEDs with Fluorescent-phosphorescent Hybrid Emitters ; Tandem WOLEDs; Side by Side WOLEDs; Color Converted WOLEDs; Excimer/Exciplex WOLEDs; CONFLICT OF INTEREST; ACKNOWLEDGMENTS; REFERENCES; Light Outcoupling Technologies ; INTRODUCTION; LIGHT DISTRIBUTION IN OLED; EXTERNAL EXTRACTION STRUCTURES; Truncated Square-pyramid Luminaire; Scattering Film; Sand-blasting Substrate; Microlens Array; INTERNAL EXTRACTION STRUCTURES; Internal Scattering Layer; Photonic Crystal Structure; Metal Nanoparticles; CONCLUSION; CONFLICT OF INTERESTACKNOWLEDGEMENTS; REFERENCES; ; Encapsulation Technologies ; INTRODUCTION; DARK SPOTS FORMATION MECHANISM; REQUIREMENT AND MEASUREMENT OF THE PERMEATION RATES; TRADITIONAL ENCAPSULATION TECHNOLOGY; THIN FILM ENCAPSUTION TECHNOLOGY; Si3N4/SiO2 Multilayer; Organic/Inorganic Multilayer; Atomic Layer Deposited (ALD) Film; CONCLUSION; CONFLICT OF INTEREST; ACKNOWLEDGEMENTS; REFERENCES; Thin Film Transistor Technology ; INTRODUCTION; HISTORY OF THIN FILM TRANSISTORS; HYDROGENATED AMORPHOUS SILICON TFT TECHNOLOGY; LOW TEMPERATURE POLYCRYSTALLLINE SILICON TFT TECHNOLOGY; SPC TechnologyMIC Technology; ELA Technology; Bridge Grain Technology; METAL OXIDE SEMICONDUCTOR TFTS; Zinc Oxide TFTs; Amorphous Oxide Semiconductors and TFTs; Zinc Tin Oxide; Indium Gallium Oxide; Indium Gallium Zinc Oxide; GaN TFTs; MoS2 TFTs; SUMMARY ; CONFLICT OF INTEREST; ACKNOWLEDGEMENTS; REFERENCES; Driving Schemes and Design Considerations for AMOLED ; CIRCUIT FUNDAMENTALS ; Resistor-Capacitor Circuit; Charging and Discharging RC Circuit; Capacitive Parasitics; TFT CIRCUIT CONSIDERATIONS; Operational Region; Transistor as a Switch; Transistor as a Current Source or Current Drain; On ResistanceApproximation of TFT with an equivalent resistance; DESIGN CONSIDERATIONS FOR ACTIVE-MATRIX BACKPLANE; Brightness; Display Timing; Pixel Storage Capacitance; Design Expression; TFT CIRCUIT DESIGN TECHNIQUES; Bootstrap Circuit; CIRCUIT COMPENSATION AND LAYOUT DESIGN; CHALLENGE IN AMOLED DISPLAYS; Aging of OLED and TFT ; Threshold Voltage Shift; 2T1C Pixel Configuration; THRESHOLD VOLTAGE COMPENSATED AMOLED PIXEL; 3T1C Pixel Configuration; 4T1C Pixel Configuration; 5T2C Pixel Configuration; 6T1C Pixel Configuration; 6T1C Pixel Configuration with biased discharge method; CONFLICT OF INTEREST