1.

Record Nr.

UNINA9910807258703321

Titolo

"Happiness" and "pain" across languages and cultures / / edited by Cliff Goddard, Zhengdao Ye

Pubbl/distr/stampa

Amsterdam, [Netherlands] ; ; Philadelphia, [Pennsylvania] : , : John Benjamins Publishing Company, , 2016

©2016

ISBN

90-272-6695-6

Descrizione fisica

1 online resource (153 pages) : illustrations, tables

Collana

Benjamins Current Topics, , 1874-0081 ; ; Volume 84

Disciplina

152.4/2014

Soggetti

Semantics

Emotions

Language and emotions

Intercultural communication

Metalanguage

Psycholinguistics

Lingua di pubblicazione

Inglese

Formato

Materiale a stampa

Livello bibliografico

Monografia

Note generali

Bibliographic Level Mode of Issuance: Monograph

Nota di bibliografia

Includes bibliographical references at the end of each chapters and index.

Nota di contenuto

Exploring "happiness" and "pain" across languages and cultures / Cliff Goddard and Zhengdao Ye -- Pain and "suffering" in cross-linguistic perspective / Anna Wierzbicka -- The story of "Danish Happiness": Global discourse and local semantics / Carsten Levisen -- The meaning of "happiness" (xìngfú) and "emotional pain" (tòngku) in Chinese / Zhengdao Ye -- Japanese interpretations of "pain" and the use of psychomimes / Yuko Asano-Cavanagh -- Some remarks on "pain" in Latin American Spanish / Zuzanna Bulat Silva -- The semantics and morphosyntax of Tare "hurt/pain" in Koromu (png): verbal and nominal constructions / Carol Priestley.



2.

Record Nr.

UNINA9910437974703321

Autore

Steger Michael

Titolo

Transition-metal defects in Silicon : new insights from photoluminescence studies of highly enriched 28-Si / / Michael Steger

Pubbl/distr/stampa

Berlin ; ; New York, : Springer, c2013

ISBN

1-299-40843-5

3-642-35079-8

Edizione

[1st ed. 2013.]

Descrizione fisica

1 online resource (107 p.)

Collana

Springer theses

Disciplina

537.6

537.6223

Soggetti

Semiconductors - Defects

Silicon

Lingua di pubblicazione

Inglese

Formato

Materiale a stampa

Livello bibliografico

Monografia

Note generali

Description based upon print version of record.

Nota di bibliografia

Includes bibliographical references.

Nota di contenuto

Introduction and Background -- History of the Observed Centres in Silicon -- Experimental Method -- Results -- Discussion and Conclusion.

Sommario/riassunto

The fundamental properties of deep luminescence centres in Si associated with transition metals such as Cu, Ag, Au, and Pt have been a focus of interest for decades, both as markers for these deleterious contaminants, and also in the quest for efficient Si-based light emission.   This dissertation presents the results of ultra-high resolution photoluminescence studies of these centres in specially prepared, highly enriched 28-Si samples. The greatly improved spectral resolution due to this enrichment led to the discovery of isotopic fingerprints. These fingerprints have revealed that the detailed constituents of all of the centres previously studied had been identified incorrectly. They also revealed the existence of several different families of impurity complexes containing either four or five atoms chosen from Li, Cu, Ag, Au, and Pt. These centres’ constituents have been determined, together with no-phonon transition energies, no-phonon isotope shifts, local vibrational mode energies, and the isotope shifts of the local vibrational mode energies. The data presented here for these centres should prove useful for the currently sought



theoretical explanations of their formation, stability, and properties.