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1. |
Record Nr. |
UNINA9910454768203321 |
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Autore |
Smout T. C (T. Christopher) |
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Titolo |
Exploring environmental history [[electronic resource] ] : selected essays / / T.C. Smout |
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Pubbl/distr/stampa |
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Edinburgh, : Edinburgh University Press, c2009 |
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ISBN |
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0-7486-5137-3 |
1-282-13652-6 |
9786612136528 |
0-7486-3514-9 |
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Descrizione fisica |
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1 online resource (257 p.) |
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Disciplina |
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Soggetti |
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Human ecology - History |
Human ecology - Scotland - History |
Electronic books. |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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Note generali |
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Description based upon print version of record. |
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Nota di bibliografia |
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Includes bibliographical references (p. 233-237) and index. |
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Nota di contenuto |
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Copyright; Contents; Acknowledgements; Illustrations; Introduction; Chapter 1 The Environmental Historiography of Britain; Chapter 2 The Highlands and the Roots of Green Consciousness, 1750-1990; Chapter 3 Exploiting Scottish Semi-Natural Woods, 1600-1850; Chapter 4 The Pinewoods and Human Use, 1600-1900; Chapter 5 The Atlantic Oakwoods as a Commercial Crop in the Eighteenth and Nineteenth Centuries; Chapter 6 Bogs and People in Scotland Since 1600; Chapter 7 Energy Rich, Energy Poor: Scotland, Ireland and Iceland, 1600-1800 |
Chapter 8 The Improvers and the Scottish Environment: Soils, Bogs and WoodsChapter 9 Trees as Historic Landscapes: from Wallace's Oak to Reforesting Scotland; Chapter 10 The Alien Species in Twentieth-Century Britain: Inventing a New Vermin; Chapter 11 Modern Agriculture and the Decline of British Biodiversity; Chapter 12 History, Nature and Culture in British Nature Conservation; Chapter 13 Environmental Consciousness; Select Bibliography; Index |
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Sommario/riassunto |
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This volume brings together the best of T. C. Smout's recent articles and contributions to books and journals on the topic of environmental |
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history and offers them as a collection of 'explorations'. The author's interests are multi-faceted and, though often focussed on post-1600 Scotland, by no means restricted to that area. |
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2. |
Record Nr. |
UNINA9910796208003321 |
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Titolo |
Emergency medicine reports LLSA exam study guide 2018 . Volume 15 / / edited by Sandra M. Schneider ; reviewed by Ann M. Dietrich |
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Pubbl/distr/stampa |
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Atlanta, [Georgia] : , : AHC Media, , 2017 |
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©2017 |
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ISBN |
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Descrizione fisica |
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1 online resource (188 pages) : illustrations, tables |
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Disciplina |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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3. |
Record Nr. |
UNINA9910795452803321 |
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Autore |
Yurchuk Ekaterina |
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Titolo |
Electrical characterisation of ferroelectric field effect transistors based on ferroelectric HfO2 thin films / / Ekaterina Yurchuk |
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Pubbl/distr/stampa |
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Berlin : , : Logos Verlag, , [2015] |
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ISBN |
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Descrizione fisica |
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1 online resource (x, 170 pages) |
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Collana |
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Disciplina |
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Soggetti |
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Hafnium |
Ferroelectric crystals |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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Note generali |
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PublicationDate: 20150630 |
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Sommario/riassunto |
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Long description: Ferroelectric field effect transistor (FeFET) memories based on a new type of ferroelectric material (silicon doped hafnium oxide) were studied within the scope of the present work. Utilisation of silicon doped hafnium oxide (Si:HfO raisebox-0.5ex scriptsize 2) thin films instead of conventional perovskite ferroelectrics as a functional layer in FeFETs provides compatibility to the CMOS process as well as improved device scalability. The influence of different process parameters on the properties of Si:HfO raisebox-0.5ex scriptsize 2 thin films was analysed in order to gain better insight into the occurrence of ferroelectricity in this system. A subsequent examination of the potential of this material as well as its possible limitations with the respect to the application in non-volatile memories followed. The Si:HfO raisebox-0.5ex scriptsize 2-based ferroelectric transistors that were fully integrated into the state-of-the-art high-k metal gate CMOS technology were studied in this work for the first time. The memory performance of these devices scaled down to 28 nm gate length was investigated. Special attention was paid to the charge trapping phenomenon shown to significantly affect the device behaviour. |
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