1.

Record Nr.

UNINA9910789405203321

Autore

Schröter Michael

Titolo

Compact hierarchial bipolar transistor modeling with HICUM [[electronic resource] /] / Michael Schröter, Anjan Chakravorty

Pubbl/distr/stampa

Hackensack, N.J., : World Scientific, 2010

ISBN

1-283-14370-4

9786613143709

981-4273-22-8

Descrizione fisica

1 online resource (740 p.)

Collana

ASSET : international series on advances in solid state electronics and technology

Altri autori (Persone)

ChakravortyAnjan

Disciplina

621.381528

Soggetti

Bipolar transistors

Lingua di pubblicazione

Inglese

Formato

Materiale a stampa

Livello bibliografico

Monografia

Note generali

Description based upon print version of record.

Nota di bibliografia

Includes bibliographical references and index.

Nota di contenuto

Foreword; Biographies; Preface; Table of Contents; List of Often Used Acronyms and Symbols; Chapter 1 Introduction; Chapter 2 Device Modeling Overview; Chapter 3 Theory of Homojunction Bipolar Transistors; Chapter 4 Advanced Theory; Chapter 5 Geometry (Layout) Scaling; Chapter 6 Temperature Effects; Chapter 7 Compact Noise Modeling; Chapter 8 HICUM Level2; Chapter 9 Parameter Determination for HICUM/L2; Chapter 10 Model Hierarchy; Chapter 11 Application Examples; Chapter 12 Future Trends; Index

Sommario/riassunto

""Compact Hierarchical Bipolar Transistor Modeling with HICUM"" will be of great practical benefit to professionals from the process development, modeling and circuit design community who are interested in the application of bipolar transistors, which include the SiGe:C HBTs fabricated with existing cutting-edge process technology. This book begins with an overview on the different device designs of modern bipolar transistors, along with their relevant operating conditions; while the subsequent chapter on transistor theory is subdivided into a review of mostly classical theories, brought into