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Record Nr. |
UNINA9910692851903321 |
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Autore |
Stemler Steve |
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Titolo |
An introduction to content analysis [[electronic resource] /] / Stemler, Steve |
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Pubbl/distr/stampa |
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College Park, MD : , : ERIC Clearinghouse on Assessment and Evaluation, , [2001] |
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Collana |
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ERIC/AE digest series ; ; EDO-TM-01-06 |
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Soggetti |
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Language and languages - Word frequency |
Research - Methodology |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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Note generali |
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Title from title screen (viewed on Jan. 31, 2003). |
Distributed to depository libraries in microfiche (1 microfiche), shipping list no.: 2003-0085-M. |
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2. |
Record Nr. |
UNINA9910787025503321 |
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Titolo |
Ultra clean processing of semiconductor surfaces XII : selected, peer reviewed papers from the 12th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS) September 21-24, 2014, Brussels, Belgium / / edited by Paul Mertens, Marc Meuris and Marc Heyns |
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Pubbl/distr/stampa |
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Pfaffikon, Switzerland : , : TTP, , 2014 |
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Enfield, New Hampshire : , : Trans Tech Publications Ltd, , [date of distribution not identified] |
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©2014 |
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ISBN |
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Descrizione fisica |
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1 online resource (331 p.) |
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Collana |
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Solid State Phenomena, , 1662-7799 ; ; Volume 219 |
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Disciplina |
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Soggetti |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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Note generali |
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Description based upon print version of record. |
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Nota di bibliografia |
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Includes bibliographical references at the end of each chapters and index. |
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Nota di contenuto |
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Ultra Clean Processing of Semiconductor Surfaces XII; Preface, Committee and Acknowledgement; Table of Contents; Chapter 1: Cleaning for FEOL Applications; Necessity of Cleaning and its Application in Future Memory Devices; Removal of Interfacial Layer in HfO2 Gate Stack by Post-Gate Cleaning Using NF3/NH3 Dry Cleaning Technique; Catalyst Assisted Low Temperature Pre Epitaxial Cleaning for Si and SiGe Surfaces; HF-Last Wet Clean in Combination with a Low Temperature GeH4-Assisted HCl In Situ Clean Prior to Si0.8Ge0.2-on-Si Epitaxial Growth |
Retardation Phenomenon of Oxide Removal during the Formation of Dual Gate Oxide via PR-Mask Wet Etching Aluminum Reduction in SC1; Metal Removal Efficiency in Deep Submicron Trenches by Wet Chemicals; Impact of Surface Treatment of Si3N4 on Subsequent SiO2 Deposition; Operation of a New Electrolyzed Cell Using Boron Doped Diamond Electrodes ; Chapter 2: Cleaning for FEOL Applications: Beyond-Si Active Area; InGaAs (110) Surface Cleaning Using Atomic Hydrogen; Surface Chemistry of GaAs(100) and InAs(100) Etching with |
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Tartaric Acid; Nanoscale Etching and Reoxidation of InAs |
Passivation of In Sb(100) with 1-Eicosanethiol Self-Assembled Monolayers Cross-Contamination Risk Evaluation during Fabrication of III-V Devices in a Silicon Processing Environment; Surface Cleaning of Graphene by CO2 Cluster; Chapter 3: Wet Etching for FEOL Applications; Process Control Challenges of Wet Etching Large MEMS Si Cavities; Wet Etch Rate Behavior of Poly-Si in TMAH Solution at Various Ambient Gas Conditions; Advanced Monitoring of TMAH Solution; Effect of Dissolved Oxygen for Advanced Wet Processing; Watermark Formation on Bare Silicon: Impact of Illumination and Substrate Doping |
Selective Nitride Etching with Phosphoric and Sulfuric Acid Mixtures Using a Single-Wafer Wet Processor Single Wafer Selective Silicon Nitride Removal with Phosphoric Acid and Steam; Pt Etching Method at Low Temperature Using Electrolyzed Sulfuric Acid Solution; Nickel Selective Etch for Contacts on Ge Based Devices; Chapter 4: Wet Processing of High Aspect Ratio Structures; Study of Wetting of Nanostructures Using Decoration by Etching; Impact of Electrostatic Effects on Wet Etching Phenomenon in Nanoscale Region; Freeze Drying of High Aspect Ratio Structures |
Chapter 5: Fluid Dynamics, Cleaning Mechanics Effect of DI-Water Dilution and Etchant Arm Movement on Spinning Type Wet Etch; Effect of Nozzle Distance and Fluid Flow Rate in Jet Spray Wafer Cleaning Process; Effects of Chamber Pressure on the Performance of CO2 Beam Cleaning; Physical Chemistry of Water Droplets in Wafer Cleaning with Low Water Use; Metal Etch in Advanced Immersion Tank with Precision Uniformity Using Agitation and Wafer Rotation; Novel Slurry Injection System for Improved Slurry Flow and Reduced Defects in CMP |
Effect of Viscoelasticity of PVA Brush on Friction during Post-CMP Cleaning: A Guideline for Nodule Configuration |
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Sommario/riassunto |
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Collection of selected, peer reviewed papers from the 12th InternationalSymposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS), September 21-24, 2014, Brussels, Belgium. The 71 papers are grouped as follows: Chapter 1: Cleaning for FEOL Applications, Chapter 2: Cleaning for FEOL Applications: Beyond-Si Active Area, Chapter 3: Wet Etching for FEOL Applications, Chapter 4: Wet Processing of High Aspect Ratio Structures, Chapter 5: Fluid Dynamics, Cleaning Mechanics, Chapter 6: Photo Resist Performance and Rework, Chapter 7: Cleaning for BEOL Interconnect Applications, Chapter 8: C |
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