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Record Nr. |
UNINA9910785940703321 |
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Titolo |
Critical perspectives on Indo-Caribbean women's literature / / edited by Joy Mahabir and Mariam Pirbhai |
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Pubbl/distr/stampa |
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New York : , : Routledge, , 2013 |
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ISBN |
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1-136-23349-0 |
1-283-71196-6 |
0-203-10103-0 |
1-136-23350-4 |
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Descrizione fisica |
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1 online resource (287 p.) |
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Collana |
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Routledge research in postcolonial literatures ; ; 41 |
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Classificazione |
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LIT004100LIT008000LIT000000 |
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Altri autori (Persone) |
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MahabirJoy A. I <1966-> (Joy Allison Indira) |
PirbhaiMariam <1970-> |
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Disciplina |
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Soggetti |
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Caribbean literature - Women authors - History and criticism |
Women and literature - Caribbean Area |
Women in literature |
Postcolonialism in literature |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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Note generali |
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Description based upon print version of record. |
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Nota di bibliografia |
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Includes bibliographical references and index. |
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Nota di contenuto |
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pt. I. Indo-Caribbean localities, femminist poetics -- pt. II. Transnational realities, diasporic subjectivities. |
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Sommario/riassunto |
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"This book is the first collection on Indo-Caribbean women's writing and the first work to offer a sustained analysis of the literature from a range of theoretical and critical perspectives, such as ecocriticism, feminist, queer, post-colonial and Caribbean cultural theories. The essays not only lay the framework of an emerging and growing field, but also critically situate internationally acclaimed writers such as Shani Mootoo, Lakshmi Persaud and Ramabai Espinet within this emerging tradition. Indo-Caribbean women writers provide a fresh new perspective in Caribbean literature, be it in their unique representations of plantation history, anti-colonial movements, diasporic identities, feminisms, ethnicity and race, or contemporary Caribbean societies and culture. The book offers a theoretical reading of the poetics, politics and cultural traditions that inform Indo-Caribbean women's writing, arguing that while women writers work with and through postcolonial |
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and Caribbean cultural theories, they also respond to a distinctive set of influences and realities specific to their positioning within the Indo-Caribbean community and the wider national, regional and global imaginary. Contributors visit the overlap between national and transnational engagements in Indo-Caribbean women's literature, considering the writers' response to local or nationally specific contexts, and the writers' response to the diasporic and transnational modalities of Caribbean and Indo-Caribbean communities"-- |
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2. |
Record Nr. |
UNINA9910831054003321 |
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Autore |
Bahl I. J |
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Titolo |
Fundamentals of RF and microwave transistor amplifiers [[electronic resource] /] / Inder Bahl |
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Pubbl/distr/stampa |
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ISBN |
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1-282-36840-0 |
9786612368400 |
0-470-46234-5 |
0-470-46231-0 |
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Descrizione fisica |
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1 online resource (697 p.) |
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Disciplina |
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Soggetti |
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Amplifiers, Radio frequency |
Microwave amplifiers |
Transistor amplifiers |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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Note generali |
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Description based upon print version of record. |
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Nota di bibliografia |
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Includes bibliographical references and index. |
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Nota di contenuto |
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Fundamentals of RF and Microwave Transistor Amplifiers; Contents in Brief; Contents; Foreword; Preface; 1. Introduction; 1.1. Transistor Amplifier; 1.2. Early History of Transistor Amplifiers; 1.3. Benefits of Transistor Amplifiers; 1.4. Transistors; 1.5. Design of Amplifiers; 1.6. Amplifier Manufacturing Technologies; 1.7. Applications of Amplifiers; 1.8. Amplifier Cost; 1.9. Current Trends; 1.10. Book Organization; References; 2. Linear Network Analysis; 2.1. Impedance Matrix; 2.2. |
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Admittance Matrix; 2.3. ABCD Parameters; 2.4. S-Parameters; 2.4.1. S-Parameters for a One-Port Network |
2.5. Relationships Between Various Two-Port ParametersReferences; Problems; 3. Amplifier Characteristics and Definitions; 3.1. Bandwidth; 3.2. Power Gain; 3.3. Input and Output VSWR; 3.4. Output Power; 3.5. Power Added Efficiency; 3.6. Intermodulation Distortion; 3.6.1. IP3; 3.6.2. ACPR; 3.6.3. EVM; 3.7. Harmonic Power; 3.8. Peak-to-Average Ratio; 3.9. Combiner Efficiency; 3.10. Noise Characterization; 3.10.1. Noise Figure; 3.10.2. Noise Temperature; 3.10.3. Noise Bandwidth; 3.10.4. Optimum Noise Match; 3.10.5. Constant Noise Figure and Gain Circles; 3.10.6. Simultaneous Input and Noise Match |
3.11. Dynamic Range3.12. Multistage Amplifier Characteristics; 3.12.1. Multistage IP3; 3.12.2. Multistage PAE; 3.12.3. Multistage NF; 3.13. Gate and Drain Pushing Factors; 3.14. Amplifier Temperature Coefficient; 3.15. Mean Time to Failure; References; Problems; 4. Transistors; 4.1. Transistor Types; 4.2. Silicon Bipolar Transistor; 4.2.1. Figure of Merit; 4.2.2. High-Frequency Noise Performance of Silicon BJT; 4.2.3. Power Performance; 4.3. GaAs MESFET; 4.3.1. Small-Signal Equivalent Circuit; 4.3.2. Figure of Merit; 4.3.3. High-Frequency Noise Properties of MESFETs |
4.4. Heterojunction Field Effect Transistor4.4.1. High-Frequency Noise Properties of HEMTs; 4.4.2. Indium Phosphide pHEMTs; 4.5. Heterojunction Bipolar Transistors; 4.5.1. High-Frequency Noise Properties of HBTs; 4.5.2. SiGe Heterojunction Bipolar Transistors; 4.6. MOSFET; References; Problems; 5. Transistor Models; 5.1. Transistor Model Types; 5.1.1. Physics/Electromagnetic Theory Based Models; 5.1.2. Analytical or Hybrid Models; 5.1.3. Measurement Based Models; 5.2. MESFET Models; 5.2.1. Linear Models; 5.2.2. Nonlinear Models; 5.3. pHEMT Models; 5.3.1. Linear Models; 5.3.2. Nonlinear Models |
5.4. HBT Model5.5. MOSFET Models; 5.6. BJT Models; 5.7. Transistor Model Scaling; 5.8. Source-Pull and Load-Pull Data; 5.8.1. Theoretical Load-Pull Data; 5.8.2. Measured Power and PAE Source Pull and Load Pull; 5.8.3. Measured IP3 Source and Load Impedance; 5.8.4. Source and Load Impedance Scaling; 5.9. Temperature-Dependent Models; References; Problems; 6. Matching Network Components; 6.1. Impedance Matching Elements; 6.2. Transmission Line Matching Elements; 6.2.1. Microstrip; 6.2.2. Coplanar Lines; 6.3. Lumped Elements; 6.3.1. Capacitors; 6.3.2. Inductors; 6.3.3. Resistors |
6.4. Bond Wire Inductors |
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Sommario/riassunto |
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A Comprehensive and Up-to-Date Treatment of RF and Microwave Transistor Amplifiers This book provides state-of-the-art coverage of RF and microwave transistor amplifiers, including low-noise, narrowband, broadband, linear, high-power, high-efficiency, and high-voltage. Topics covered include modeling, analysis, design, packaging, and thermal and fabrication considerations. Through a unique integration of theory and practice, readers will learn to solve amplifier-related design problems ranging from matching networks to biasing and stability. More than 240 problems are included to help read |
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