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Record Nr. |
UNINA9910784807003321 |
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Titolo |
SiC materials and devices . Vol. 1 [[electronic resource] /] / edited by Michael Shur, Sergey Rumyantsev, Michael Levinshtein |
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Pubbl/distr/stampa |
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New Jersey, : World Scientific, 2006 |
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ISBN |
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1-281-37331-1 |
9786611373313 |
981-277-337-1 |
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Descrizione fisica |
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1 online resource (342 p.) |
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Collana |
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Selected topics in electronics and systems ; ; v. 40 |
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Altri autori (Persone) |
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ShurMichael |
RumyantsevSergey L |
LevinshteĭnM. E (Mikhail Efimovich) |
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Disciplina |
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Soggetti |
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Silicon carbide - Electric properties |
Semiconductors |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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Note generali |
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Material reprinted from International Journal of High Speed Electronics and Systems, v. 15 no. 4 (2005), with original paging in upper corner. |
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Nota di bibliografia |
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Includes bibliographical references and index. |
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Nota di contenuto |
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CONTENTS; Preface; Sic Material Properties; 1 Introduction; 2 Polytypism; 3 Band Structure and Effective Masses; 4 Thermal Properties; 5 Dopants and free charge carriers; 6 Diffusion of Dopants; 7 Impurity Conduction; 8 Minority Carrier Lifetime |
9 Properties of SiC/SiO2 Interfaces Acknowledgments; References; SiC Homoepitaxy and Heteroepitaxy; 1 Introduction; 2 SiC homoepitaxial growth; 3 SiC heteroepitaxial growth; 4 Summary; References; Ohmic Contacts to SiC; 1 Introduction; 2 Metal-Semiconductor Contacts |
3 Specific Contact Resistance 4 Ohmic Contacts to n-type SiC; 5 Ohmic Contacts to p-type SiC; 6 Long-Term Thermal Stability of Ohmic Contacts to SiC; 8 Conclusion; References; Silicon Carbide Schottky Barrier Diode |
1 Introduction 2 SiC Schottky Contacts; 3 High Voltage SiC SBD JBS and MPS diodes; 4 Applications in Power Electronics Circuits; 5 Other Applications of SiC SBD; 6 Summary and Future Challenges; References; High Power SiC PiN Rectifiers; 1 Introduction |
2 PiN Rectifier Design and Operation 3 Experimental Results on PiN |
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