| |
|
|
|
|
|
|
|
|
1. |
Record Nr. |
UNINA9910784783703321 |
|
|
Titolo |
Oxide reliability [[electronic resource] ] : a summary of silicon oxide wearout, breakdown, and reliability / / editor, D.J. Dumin |
|
|
|
|
|
|
|
Pubbl/distr/stampa |
|
|
[River Edge, NJ], : World Scientific, c2002 |
|
|
|
|
|
|
|
ISBN |
|
|
|
|
|
|
Descrizione fisica |
|
1 online resource (281 p.) |
|
|
|
|
|
|
Collana |
|
Selected topics in electronics and systems ; ; v. 23 |
|
|
|
|
|
|
Altri autori (Persone) |
|
|
|
|
|
|
Disciplina |
|
|
|
|
|
|
Soggetti |
|
Metal oxide semiconductors - Reliability |
Silicon oxide - Deterioration |
|
|
|
|
|
|
|
|
Lingua di pubblicazione |
|
|
|
|
|
|
Formato |
Materiale a stampa |
|
|
|
|
|
Livello bibliografico |
Monografia |
|
|
|
|
|
Note generali |
|
Description based upon print version of record. |
|
|
|
|
|
|
Nota di bibliografia |
|
Includes bibliographical references. |
|
|
|
|
|
|
Nota di contenuto |
|
CONTENTS ; Foreword ; Oxide Wearout, Breakdown, and Reliability; 1. Introduction ; 2. Oxide Breakdown ; 3. Oxide Leakage Currents ; 4. Oxide Trap Generation ; 5. Statistics of Wearout and Breakdown ; 6. Reliability ; 7. Summary ; Reliability of Flash Nonvolatile Memories ; 1. Introduction |
2. Implications to Scaling and Reliability 3. Dielectric Damage Caused by Program/Erase Cycling ; 4. Overerase Effects ; 5. Stress Induced Leakage Current and Post-Cycling Data Retention ; 6 Other Failure Mechanisms ; 7. Conclusions ; Physics and Chemistry of Intrinsic Time-Dependent Dielectric Breakdown in SiO2 Dielectrics |
1. Introduction 2. Time-Dependent Dielectric Breakdown ; 3. Chemistry and Physics of Amorphous SiO2 ; 4. Molecular Models for Dielectric Degradation ; 5. Electron and Hole Injection into SiO2 ; 6. Role of Hole Capture in TDDB ; 7. Complementary Model for TDDB |
8. Conditions Under Which the E and 1/E Models are Valid 9. Extention of the Complementary Model to Hyper-Thin SiO2; 10. Summary ; Breakdown Modes and Breakdown Statistics of Ultrathin SiO2 Gate Oxides; 1. Introduction ; 2. |
|
|
|
|
|
|
|
|
|
|
|
Breakdown related to the generation of oxide defects ; 3. Modeling the Breakdown Statistics |
4. Breakdown modes: Soft breakdown and Hard Breakdown 5. Breakdown effectiveness, energy dissipation and device failure; 6. Conclusions ; MOSFET Gate Oxide Reliability: Anode Hole Injection Model and Its Applications ; 1. Introduction ; 2. Development of the Anode Hole Injection Model ; 3. Recent Developments |
4. Gross-Defect Related Breakdown and Burn-in Model |
|
|
|
|
|
|
Sommario/riassunto |
|
This book presents in summary the state of our knowledge of oxide reliability. The articles have been written by experts who are among the most knowledgeable in the field. The book will be an invaluable aid to reliability engineers and manufacturing engineers, helping them to produce and characterize reliable oxides. It can be used as an introduction for new engineers interested in oxide reliability, besides being a reference for engineers already engaged in the field. <br><i>Contents: </i><ul><li>Oxide Wearout, Breakdown, and Reliability <i>(D J Dumin)</i></li><li>Reliability of Flash Nonvol |
|
|
|
|
|
|
|
| |