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1. |
Record Nr. |
UNINA9910783685603321 |
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Titolo |
Bougainville before the conflict / / edited by Anthony J. Regan and Helga M. Griffin |
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Pubbl/distr/stampa |
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Canberra, : Pandanus Books, c2005 |
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©2005 |
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ISBN |
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Descrizione fisica |
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1 online resource (xl, 566 pages) : illustrations, maps |
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Altri autori (Persone) |
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ReganA. J (Anthony J.) |
GriffinHelga-Maria <1935-> |
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Disciplina |
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Soggetti |
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Bougainville Island (Papua New Guinea) History |
Bougainville Island (Papua New Guinea) Politics and government |
Bougainville Island (Papua New Guinea) Social conditions |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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Note generali |
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Nota di bibliografia |
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Bibliography: p. 498-545. |
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Nota di contenuto |
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Preliminaries; Contents; Introduction; Bougainville's Early History: An Archaeological Perspective; The Geology of Bougainville; The Languages of Bougainville; An Introduction to Bougainville Cultures; Why do the People of Bougainville Look Unique Some Conclusions; Origins of Bougainville's Boundaries; German Colonial Rule in the Northern Solomons; The Pacification of Southern Bougainville 1900 30; Imperium in Imperio The Catholic Church in Bougainville; 1914 Changing the Guard at Kieta; Between the Waitman's Wars 1914 42; Bougainville in World War II; Sources on Pre mining Bougainville |
Post War Reconstruction in Bougainville Plantations Post 1960's Cocoa and Copra Production in Bougainville; The Panguna Mine; Torau Response to Change; Movements Towards Secession 1964 76; Shaping Leadership through Bougainville Indigenous Values and; The Bougainville Catholic Church and Indigenisation; Buin Social Structure; We are Born Chiefs Chiefly Identity and Power in Haku Buka Island; Land for Agriculture Silent... |
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Sommario/riassunto |
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This remarkable book brings together in one volume most aspects — geological, environmental, archaeological, ethnic, linguistic, |
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ethnographic and historical - of one of the most beautiful island groups of the Pacific, Bougainville. |
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2. |
Record Nr. |
UNINA9910784745703321 |
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Titolo |
III-nitride [[electronic resource] ] : semiconductor materials / / editor, Zhe Chuan Feng |
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Pubbl/distr/stampa |
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London, : Imperial College Press, c2006 |
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ISBN |
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1-281-86721-7 |
9786611867218 |
1-86094-903-7 |
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Descrizione fisica |
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1 online resource (440 p.) |
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Altri autori (Persone) |
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Disciplina |
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541.377 |
541/.377 |
621.38152 |
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Soggetti |
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Semiconductors - Materials |
Nitrides |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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Note generali |
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Description based upon print version of record. |
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Nota di bibliografia |
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Includes bibliographical references. |
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Nota di contenuto |
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CONTENTS ; Preface ; Chapter 1 Hydride vapor phase epitaxy of group III nitride materials ; 1.Introduction ; 2.Experiment ; 3.Material Properties ; 3.1. Undoped GaN layers ; 3.2. Si-doped GaN layers ; 3.3. Mg-doped GaN layers ; 3.4. Zn-doped GaN layers ; 3.5. AlN layers |
3.6. AlGaN layers 3.7. InN and InGaN layers ; 4.New directions in HVPE development ; 4.1. Large area and multi wafer HVPE growth ; 4.2. Multi-layer structures ; 4.3. P-n junctions ; 4.4. Structures with two dimensional carrier gas ; 4.5. Nano structures and porous materials |
5.Applications of HVPE grown group III nitride materials |
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5.1. Substrate applications ; 5.1.1. Template substrates ; 5.1.2. Free-standing substrates ; 5.1.3. Bulk substrates ; 5.2. Device Applications ; 6.Conclusions |
Chapter 2 Planar MOVPE technology for epitaxy of III-nitride materials 1. History of Reactor Development for III-Nitrides ; 2. Types of Planar Reactors ; 3. Reactor Modeling ; 3.1. Growth Kinetics of Group-III Nitride MOVPE ; 3.2. Modeling of MOVPE processes |
3.3. Horizontal Tube Reactors: Flow Dynamics and Reactor Technology 3.4. Planetary Reactors: Transport Phenomena & Parameter Dependencies ; 4. In-situ Technology in Nitride MOCVD Systems ; 5. The Mass Production of GaN and Related Materials ; 5.1. Optoelectronic Device Structures |
5.2. Growth in the 8x4 inch Configuration |
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Sommario/riassunto |
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III-Nitride semiconductor materials - (Al, In, Ga)N - are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved recently, and current knowledge and data published have to be modified and upgraded. This book presents the new developments and achievements in the field. Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes th |
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