III-nitride [[electronic resource] ] : semiconductor materials / / editor, Zhe Chuan Feng

• Record Nr.: UNINA9910784745703321
• Pubbl/distr/stampa: London, : Imperial College Press, c2006
• ISBN: 1-281-86721-7; 9786611867218; 1-86094-903-7
• Descrizione fisica: 1 online resource (440 p.)
• Altri autori (Persone): FengZhe Chuan
• Disciplina: 541.377; 541/.377; 621.38152
• Soggetti: Semiconductors - Materials; Nitrides
• Lingua di pubblicazione: Inglese
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Note generali: Description based upon print version of record.
• Nota di bibliografia: Includes bibliographical references.
• Nota di contenuto: CONTENTS ; Preface ; Chapter 1 Hydride vapor phase epitaxy of group III nitride materials ; 1.Introduction ; 2.Experiment ; 3.Material Properties ; 3.1. Undoped GaN layers ; 3.2. Si-doped GaN layers ; 3.3. Mg-doped GaN layers ; 3.4. Zn-doped GaN layers ; 3.5. AlN layers; 3.6. AlGaN layers 3.7. InN and InGaN layers ; 4.New directions in HVPE development ; 4.1. Large area and multi wafer HVPE growth ; 4.2. Multi-layer structures ; 4.3. P-n junctions ; 4.4. Structures with two dimensional carrier gas ; 4.5. Nano structures and porous materials; 5.Applications of HVPE grown group III nitride materials 5.1. Substrate applications ; 5.1.1. Template substrates ; 5.1.2. Free-standing substrates ; 5.1.3. Bulk substrates ; 5.2. Device Applications ; 6.Conclusions; Chapter 2 Planar MOVPE technology for epitaxy of III-nitride materials 1. History of Reactor Development for III-Nitrides ; 2. Types of Planar Reactors ; 3. Reactor Modeling ; 3.1. Growth Kinetics of Group-III Nitride MOVPE ; 3.2. Modeling of MOVPE processes; 3.3. Horizontal Tube Reactors: Flow Dynamics and Reactor Technology 3.4. Planetary Reactors: Transport Phenomena & Parameter Dependencies ; 4. In-situ Technology in Nitride MOCVD Systems ; 5. The Mass Production of GaN and Related Materials ; 5.1. Optoelectronic Device Structures; 5.2. Growth in the 8x4 inch Configuration
• Sommario/riassunto: III-Nitride semiconductor materials - (Al, In, Ga)N - are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved recently, and current knowledge and data published have to be modified and upgraded. This book presents the new developments and achievements in the field. Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes th

Scattering Theory / / by Harald Friedrich

• Record Nr.: UNINA9910254608303321
• Autore: Friedrich Harald
• Pubbl/distr/stampa: Berlin, Heidelberg : , : Springer Berlin Heidelberg : , : Imprint : Springer, , 2016
• ISBN: 3-662-48526-5
• Edizione: [2nd ed. 2016.]
• Descrizione fisica: 1 online resource (293 p.)
• Disciplina: 530
• Soggetti: Physics; Low temperatures; Atoms; Mathematical Methods in Physics; Low Temperature Physics; Atomic, Molecular, Optical and Plasma Physics
• Lingua di pubblicazione: Inglese
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Note generali: Description based upon print version of record.
• Nota di bibliografia: Includes bibliographical references at the end of each chapters and index.
• Nota di contenuto: Classical Scattering Theory. -Elastic scattering by a conservative potential. – Internal excitation, Inelastic scattering. - Special topics -- Appendices -- Index.
• Sommario/riassunto: This corrected and updated second edition of "Scattering Theory" presents a concise and modern coverage of the subject. In the present treatment, special attention is given to the role played by the long-range behaviour of the projectile-target interaction, and a theory is developed, which is well suited to describe near-threshold bound and continuum states in realistic binary systems such as diatomic molecules or molecular ions. It is motivated by the fact that experimental advances have shifted and broadened the scope of applications where concepts from scattering theory are used, e.g. to the field of ultracold atoms and molecules, which has been experiencing enormous growth in recent years, largely triggered by the successful realization of Bose-Einstein condensates of dilute atomic gases in 1995. The book contains sections on special topics such as near-threshold quantization, quantum reflection, Feshbach resonances and the quantum description ; of scattering in two dimensions. The level of abstraction is kept as low as at all possible and deeper questions related to the mathematical foundations of scattering theory are passed by. It should be understandable for anyone with a basic knowledge of nonrelativistic quantum mechanics. The book is intended for advanced students and researchers, and it is hoped that it will be useful for theorists and experimentalists alike.