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Record Nr. |
UNINA9910784042103321 |
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Titolo |
SiC materials and devices [[electronic resource] /] / edited by Michael Shur, Sergey Rumyantsev, Michael Levinshtein |
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Pubbl/distr/stampa |
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New Jersey ; ; London, : World Scientific, 2007 |
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ISBN |
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1-281-12124-X |
9786611121242 |
981-270-685-2 |
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Descrizione fisica |
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1 online resource (143 p.) |
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Collana |
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Selected topics in electronics and systems ; ; 43 |
SiC materials and devices ; ; 2 |
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Altri autori (Persone) |
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ShurMichael |
RumyantsevSergey L |
LevinshteĭnM. E (Mikhail Efimovich) |
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Disciplina |
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Soggetti |
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Silicon carbide - Electric properties |
Semiconductors |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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Note generali |
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Description based upon print version of record. |
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Nota di bibliografia |
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Includes bibliographical references. |
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Nota di contenuto |
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Preface; CONTENTS; Growth of Sic Substrates A. Powell, J. Jenny, S. Muller, H. Mcd. Hobgood, V. Tsvetkov, R. Lenoard and C. Carter, Jr.; 1. Introduction; 2. Sic Bulk Growth; 3. Crystal Orientation; 4. Crystal Diameter Enlargement; 5. Substrate Defects; 6. Doping in SIC; 7. Sic Substrates for Microwave Devices; 8. Wafering and Polish; 9. Substrate Cost; 10. Conclusions; Acknowledgments; References; Deep Level Defects in Silicon Carbide A. A. Lebedev; 1. Introduction; 2. Parameters of Deep Centers in Sic; 3. Influence of Impurities on the Growth of Epitaxial Sic Layers |
4. Deep Centers and Recombination Processes in Sic5. Conclusion; Acknowledgements; References; Silicon Carbide Junction Field Effect Transistors D. Stephani and P. Friedrichs; 1. Introduction; 2. Lateral SiC-JFETs; 3. The Vertical JFET (VJFET); References; Sic BJTs T. P. Chow and A. K. Agarwal; 1. Introduction; 2, Figures of Merit; 3. Power Bipolar Transistors; 4. Commercialization Challenges; References |
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Sommario/riassunto |
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Silicon carbide is known to have been investigated since 1907 when Captain H J Round demonstrated yellow and blue emission by applying |
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