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Record Nr. |
UNINA9910781525203321 |
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Autore |
Li Hai <1975, > |
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Titolo |
Nonvolatile memory design : magnetic, resistive, and phase change / / Hai Li, Yiran Chen |
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Pubbl/distr/stampa |
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Boca Raton, Fla. : , : CRC Press, , 2012 |
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ISBN |
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1-315-21830-5 |
1-351-83419-3 |
1-280-12159-9 |
9786613525451 |
1-4398-0746-9 |
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Descrizione fisica |
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1 online resource (200 p.) |
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Altri autori (Persone) |
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Disciplina |
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Soggetti |
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Semiconductor storage devices |
Magnetic memory (Computers) |
Flash memories (Computers) |
Change of state (Physics) - Industrial applications |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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Note generali |
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Description based upon print version of record. |
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Nota di bibliografia |
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Includes bibliographical references. |
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Nota di contenuto |
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1. Introduction to semiconductor memories -- 2. Phase change memory -- 3. Spin-transfer torque RAM -- 4. Resistive random access memory -- 5. Memristors -- 6. The future of nonvolatile memory. |
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Sommario/riassunto |
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The manufacture of flash memory, which is the dominant nonvolatile memory technology, is facing severe technical barriers. So much so, that some emerging technologies have been proposed as alternatives to flash memory in the nano-regime. Nonvolatile Memory Design: Magnetic, Resistive, and Phase Changing introduces three promising candidates: phase-change memory, magnetic random access memory, and resistive random access memory. The text illustrates the fundamental storage mechanism of these technologies and examines their differences from flash memory techniques. Based on the latest advances, |
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