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Record Nr. |
UNINA9910779883603321 |
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Titolo |
Frontiers in electronics : proceedings of the workshop on frontiers in electronics 2009, Rincon, Puerto Rico, 13-16 December 2009 / / editors, Sorin Cristoloveanu, Grenoble INP, Minatec, France, Michael S. Shur, Rensselaer Polytechnic Institute, USA |
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Pubbl/distr/stampa |
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River Edge, N.J., : World Scientific, c2009 |
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New Jersey : , : World Scientific, , [2013] |
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�2013 |
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ISBN |
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Descrizione fisica |
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1 online resource (ix, 230 pages) : illustrations (some color) |
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Collana |
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Selected Topics in Electronics and Systems ; ; v.52 |
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Disciplina |
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Soggetti |
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Electronics - Technological innovations |
Nanoelectromechanical systems |
Optoelectronics |
Metal oxide semiconductors, Complementary |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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Note generali |
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Description based upon print version of record. |
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Nota di bibliografia |
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Includes bibliographical references and index. |
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Nota di contenuto |
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Preface; CONTENTS; Advanced Terahertz and Photonics Devices; Broadband Terahertz Wave Generation, Detection and Coherent Control Using Terahertz Gas Photonics J. Liu, J. Dai, X. Lu, I. C. Ho and X. C. Zhang; 1. Introduction; 2. The Mechanism of THz Generation and Detection in Gas; 3. THz Wave Generation and Detection in Different Gases; 4. THz Remote Generation and Detection; 5. Coherent Control of THz Generation; 6. Conclusion; Acknowledgement; References; How do We Lose Excitation in the Green? C. Wetzel, Y. Xia, W. Zhao, Y. Li, M. Zhu, S. You, L. Zhao, W. Hou, C. Stark and M. Dibiccari |
1. Introduction2. Material and Methods; 3. Experimental; 4. Discussion; 5. Conclusions; Acknowledgments; References; Silicon Finfets as Detectors of Terahertz and Sub-Terahertz Radiation W. Stillman, C. Donais, S. Rumyantsev, M. Shur, D. Veksler, C. Hobbs, C. Smith, G. Bersuker, W. Taylor and R. Jammy; 1. Introduction; 2. Plasma Wave Detectors; 3. FinFET Structure; 4. Response Measurements; 5. Noise Equivalent Power; 6. Conclusion; Acknowledgments; References |
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Progress in Development of Room Temperature CW GaSb based Diode Lasers for 2-3.5 μm Spectral Region T. Hosoda, J. Chen, G. Tsvid, D. Westerfeld, R. Liang, G. Kipshidze, L. Shterengas and G. Belenky1. Introduction; 2. Results and Discussion; 2.1. Waveguide core width and asymmetry optimization for 2 μm emitting devices; 2.2. CW power characteristics over 2.2 to 3.3 μm wavelength range; 3. Conclusion; Acknowledgements; References; WDM Demultiplexing by Using Surface Plasmon Polaritons D. K. Mynbaev and V. Sukharenko; 1. Introduction; 2. The Frequency of SPPs |
3. The Concept of WDM Demultiplexing with SPPs4. Summary; Acknowledgment; References; Silicon and Germanium on Insulator and Advanced CMOS and MOSHFETs; Connecting Electrical and Structural Dielectric Characteristics G. Bersuker, D. Veksler, C. D. Young, H. Park, W. Taylor, P. Kirsch, R. Jammy, L. Morassi, A. Padovani and L. Larcher; 1. Introduction; 2. Noise Generating Defects in High-k Gate Stacks; 2.1. Analysis of Random Telegraph Signal Noise (RTN); 2.2. Extracting defect characteristics; 3. Defects Responsible for High-k Gate Stack Degradation/Breakdown |
3.1. Physical evidences of O-vacancies in IL3.2. Defects identification; 4. Vfb Roll-Off Phenomenon; 4.1. Roll-off mechanism; 4.2. Generation of positively charged defects; 4.3. Origin of R-O defects and R-O suppression; References; Advanced Solutions for Mobility Enhancement in SOI MOSFETs L. Pham-Nguyen, C. Fenouillet-Beranger, P. Perreau, S. Denorme, G. Ghibaudo, O. Faynot, T. Skotnicki, A. Ohata, M. Casse, I. Ionica, W. van den Daele, K-H. Park, S-J. Chang, Y-H. Bae, M. Bawedin and S. Cristoloveanu; 1. Introduction; 2. Series Resistance Reduction; 3. High-K Dielectrics; 4. Metal Gate |
5. Strain |
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Sommario/riassunto |
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Frontiers in Electronics is divided into four sections: advanced terahertz and photonics devices; silicon and germanium on insulator and advanced CMOS and MOSHFETs; nanomaterials and nanodevices; and wide band gap technology for high power and UV photonics. This book will be useful for nano-microelectronics scientists, engineers, and visionary research leaders. It is also recommended to graduate students working at the frontiers of the nanoelectronics and microscience. |
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