| |
|
|
|
|
|
|
|
|
1. |
Record Nr. |
UNINA9910778982503321 |
|
|
Autore |
Killingsworth M. Jimmie |
|
|
Titolo |
Ecospeak [[electronic resource] ] : Rhetoric and Environmental Politics in America |
|
|
|
|
|
|
|
Pubbl/distr/stampa |
|
|
Carbondale, : Southern Illinois University Press, 2012 |
|
|
|
|
|
|
|
ISBN |
|
9786613901286 |
0-585-02770-6 |
|
|
|
|
|
|
|
|
Descrizione fisica |
|
1 online resource (329 p.) |
|
|
|
|
|
|
Altri autori (Persone) |
|
|
|
|
|
|
Disciplina |
|
363.7/056/0973 |
363.70560973 |
|
|
|
|
|
|
|
|
Soggetti |
|
English language -- United States -- Rhetoric |
Environmental policy -- United States |
Human ecology -- United States |
Political culture -- United States |
United States -- Economic policy -- 1945-1960 -- Environmental aspects |
Environmental policy - Rhetoric - United States |
Human ecology - United States |
English language - United States |
Political culture - United States |
Business & Economics |
Economic History |
United States Economic policy 1945-1960 Environmental aspects |
|
|
|
|
|
|
|
|
Lingua di pubblicazione |
|
|
|
|
|
|
Formato |
Materiale a stampa |
|
|
|
|
|
Livello bibliografico |
Monografia |
|
|
|
|
|
Note generali |
|
Description based upon print version of record. |
|
|
|
|
|
|
Nota di contenuto |
|
Cover; Book Title; Copyright; Dedication; Contents; Illustrations; Acknowledgments; Introduction: Rhetoric and the Environmental Dilemma; 1. Varieties of Environmentalism: A Genealogy; 2. The Rhetoric of Scientific Activism; 3. Scientific Ecology and the Rhetoric of Distance; 4. Transformations of Scientific Discourse in the News Media; 5. The Environmental Impact Statement and the Rhetoric of Democracy; 6. Rhetoric and Action in Ecotopian Discourse; 7. Ecological Economics and the Rhetoric of Sustainability; Epilogue: The Scientific Activist and |
|
|
|
|
|
|
|
|
|
|
|
|
|
the Problem of Openness; Notes; Works Cited |
IndexAuthor Biographies; Back Cover |
|
|
|
|
|
|
Sommario/riassunto |
|
800x600 Normal 0 false false false EN-US X-NONE X-NONE MicrosoftInternetExplorer4 In |
|
|
|
|
|
|
|
|
2. |
Record Nr. |
UNINA9910807350103321 |
|
|
Titolo |
Frontiers in electronics : advanced modeling of nanoscale electron devices / / editors, Benjamin Iniguez, Universitat Rovira I Virgili, Spain, Tor A. Fjeldly, Norwegian University of Science and Technology (NTNU), Norway |
|
|
|
|
|
|
|
Pubbl/distr/stampa |
|
|
New Jersey : , : World Scientific, , [2014] |
|
�2014 |
|
|
|
|
|
|
|
|
|
ISBN |
|
|
|
|
|
|
Descrizione fisica |
|
1 online resource (vii, 195 pages) : illustrations (some color) |
|
|
|
|
|
|
Collana |
|
Selected topics in electronics and systems ; ; volume 54 |
|
|
|
|
|
|
Disciplina |
|
|
|
|
|
|
Soggetti |
|
Nanoelectronics |
Nanostructured materials |
Electron transport - Mathematical models |
|
|
|
|
|
|
|
|
Lingua di pubblicazione |
|
|
|
|
|
|
Formato |
Materiale a stampa |
|
|
|
|
|
Livello bibliografico |
Monografia |
|
|
|
|
|
Note generali |
|
Description based upon print version of record. |
|
|
|
|
|
|
Nota di bibliografia |
|
Includes bibliographical references and index. |
|
|
|
|
|
|
Nota di contenuto |
|
PREFACE; CONTENTS; Monte-Carlo Simulation of Ultra-Thin Film Silicon-on-Insulator MOSFETs; 1. Introduction; 2. Ensemble Monte Carlo simulators; 2.1. Quantum correction methods; 2.1.1. The effective potential method; 2.1.2. The density gradient method; 2.1.3. The effective conduction band edge (ECBE) method; 2.1.4. The multivalley effective conduction band edge approach (MV-ECBE); 2.2. Multisubband-Ensemble Monte Carlo method; 2.3. Multisubband-Ensemble Monte Carlo validation; 3. Optimization of ultrathin fully-depleted SOI transistors with ultrathin buried oxide (BOX) |
4. Orientation effects in ultra-short channel DGSOI devices4.1. DGSOI drain current dependence on crystallographic orientation; |
|
|
|
|
|
|
|
|
|
|
|
Acknowledgments; References; Analytical Models and Electrical Characterisation of Advanced MOSFETs in the Quasi Ballistic Regime; 1. Introduction; 2. The Natori - Lundstrom models of Quasi Ballistic Transport; 2.1. The Natori model of ballistic transport; 2.2. Injection velocity and subband engineering; 2.3. Lundstrom models of backscattering; 3. Beyond the Natori-Lundstrom model |
3.1. Theoretical foundations of the Natori Lundstrom model: the quasi ballistic drift-diffusion theory3.2. Comparison with Monte Carlo simulations: results and discussion; 4. Electrical Characterization of MOSFETs in the Quasi Ballistic Regime; 4.1. Introduction & State of the art; 4.2. Principle of backscattering coefficient extraction in the linear regime; 4.3. Results and discussion; 5. Conclusions; Acknowledgments; References; Physics Based Analytical Modeling of Nanoscale Multigate MOSFETs; 1. Introduction; 2. Modeling of DG MOSFETs Based on Conformal Mapping Techniques |
2.1. Conformal Mapping2.2. Inter-Electrode and Subthreshold Electrostatics in DG MOSFETs; 2.2.1. Corner correction; 2.2.2. Effect of subthreshold minority carriers near source and drain; 2.2.3. Verification of subthreshold electrostatics; 2.2.4. Subthreshold drain current; 2.2.5. Subthreshold capacitances; 2.3. Self-Consistent Electrostatics at and above Transition in DG MOSFETs; 2.3.1. Transition voltage; 2.3.2. Above-transition electrostatics; 2.3.3. Drain current; 2.3.4. Above-threshold capacitances; 3. Modeling of Circular Gate MOSFETs |
3.1. Subthreshold Electrostatics of GAA MOSFETs Based on 2D Solutions3.2. Subthreshold Modeling of CirG MOSFETs; 3.3. Above-Threshold Modeling of CirG MOSFETs; 4. Unified Analytical Modeling of MugFETs; 4.1. Isomorphic Modeling of CirG and SqG MOSFETs in Subthreshold; 4.1.1. A simple long-channel model; 4.1.2. Short-channel modeling of CirG and SqG devices in subthreshold; 4.1.3. Rectangular gate and trigate MOSFETs; 4.2. Modeling of GAA MOSFETs in Strong Inversion; 4.2.1. Strong inversion electrostatics in DG MOSFETs; 4.2.2. Strong inversion electrostatics in SqG MOSFETs |
4.2.3. Strong inversion charge, drain current and capacitances |
|
|
|
|
|
|
Sommario/riassunto |
|
This book consists of four chapters to address at different modeling levels for different nanoscale MOS structures (Single- and Multi-Gate MOSFETs). The collection of these chapters in the book are attempted to provide a comprehensive coverage on the different levels of electrostatics and transport modeling for these devices, and relationships between them. In particular, the issue of quantum transport approaches, analytical predictive 2D/3D modeling and design-oriented compact modeling. It should be of interests to researchers working on modeling at any level, to provide them with a clear exp |
|
|
|
|
|
|
|
| |