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1. |
Record Nr. |
UNINA9910709745803321 |
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Autore |
Krauss P. D (Paul D.) |
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Titolo |
Highway concrete pavement technology development and testing / / Paul Krauss [and seven others] |
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Pubbl/distr/stampa |
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McLean, VA : , : U.S. Department of Transportation, Federal Highway Administration, Research, Development, and Technology, Turner-Fairbank Highway Research Center, , 2006 |
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Descrizione fisica |
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1 online resource (5 volumes) : illustrations (chiefly color) |
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Soggetti |
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Pavements, Concrete - Testing |
Alkali-aggregate reactions |
Pavements, Concrete - Materials - Effect of low temperatures on |
High strength concrete - Testing |
Pavements - Overlays - Testing |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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Note generali |
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"August 2006"--Vol. 1-<5>; "May 2006"--Volume 3. |
"Publication no. FHWA-RD-02-082"--Vol. 1; "Publication no. FHWA-RD-02-083"--Vol. 2; "Publication no. FHWA-RD-02-084"--Vol. 3; "Publication no. FHWA-RD-02-085"--Vol. 4; "Publication no. FHWA-RD-02-086"--Vol. 5. |
"HRDI-13/08-06(WEB)E"--Page 4 of cover. |
"Performing organization: Wiss, Janney, Elstner Associates, Inc., and ERES Division of Applied Research Associates, Inc."--Technical report documentation page. |
Includes tables and appendixes. |
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Nota di bibliografia |
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Includes bibliographical references. |
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Nota di contenuto |
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; Volume I. Field evaluation of Strategic Highway Research Program (SHRP) C-202 test sites (alkali-silica reaction (ASR)) -- ; volume II. Field evaluation of Strategic Highway Research Program (SHRP) C-203 test sites (freeze-thaw resistance) -- ; volume III. Field evaluation of SHRP C-205 test sites (high-performance concrete) -- ; volume IV. Field evaluation of Strategic Highway Research Program (SHRP) C-206 test sites (early opening of full-depth pavement repairs) -- ; volume V. Field evaluation of Strategic Highway Research Program (SHRP) C-206 test |
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sites (bridge deck overlays). |
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2. |
Record Nr. |
UNINA9910299850503321 |
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Autore |
Nojiri Kazuo |
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Titolo |
Dry Etching Technology for Semiconductors / / by Kazuo Nojiri |
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Pubbl/distr/stampa |
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Cham : , : Springer International Publishing : , : Imprint : Springer, , 2015 |
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ISBN |
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Edizione |
[1st ed. 2015.] |
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Descrizione fisica |
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1 online resource (126 p.) |
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Disciplina |
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Soggetti |
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Electronic circuits |
Semiconductors |
Circuits and Systems |
Electronic Circuits and Devices |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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Note generali |
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Description based upon print version of record. |
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Nota di bibliografia |
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Includes bibliographical references. |
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Nota di contenuto |
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Contribution of Dry Etching Technology to Progress of Semiconductor Integrated Circuit -- Mechanism of Dry Etching -- Dry Etching of Various Materials -- Dry Etching Equipments -- Dry Etching Damage -- Latest Dry Etching Technologies -- Future Challenges and Outlook for Dry Etching Technology. |
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Sommario/riassunto |
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This book is a must-have reference to dry etching technology for semiconductors, which will enable engineers to develop new etching processes for further miniaturization and integration of semiconductor integrated circuits. The author describes the device manufacturing flow, and explains in which part of the flow dry etching is actually used. The content is designed as a practical guide for engineers working at chip makers, equipment suppliers and materials suppliers, and university students studying plasma, focusing on the topics they need most, such as detailed etching processes for each material (Si, SiO2, Metal etc) used in semiconductor devices, etching equipment used in manufacturing fabs, explanation of why a particular plasma source and |
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gas chemistry are used for the etching of each material, and how to develop etching processes. The latest, key technologies are also described, such as 3D IC Etching, Dual Damascene Etching, Low-k Etching, Hi-k/Metal Gate Etching, FinFET Etching, Double Patterning etc. Provides a comprehensive, systematic guide to dry etching technologies, from basics to latest technologies; Enables beginners to understand the mechanisms of dry etching, without complexities of numerical formulas/equations; Describes etching processes for all materials which are used in semiconductor devices, explains key etching parameters for each material, and explains why a particular plasma source and etching gas chemistry is used for each material; Discusses the device manufacturing flow and explains in which part of device manufacturing dry etching is actually used; Describes the types and plasma generation mechanism of etching equipment which are actually used in semiconductor fabs, such as CCP (Capacitively Coupled Plasma), Magnetron RIE (Magnetron Reactive Ion Etching), ECR (Electron Cyclotron Resonance) Plasma, and ICP (Inductively Coupled Plasma). |
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