1.

Record Nr.

UNINA9910705179103321

Autore

Finn Thomas M.

Titolo

Maps showing thermal maturity of Upper Cretaceous marine shales in the Bighorn Basin, Wyoming and Montana / / by Thomas M. Finn and Mark J. Pawlewicz

Pubbl/distr/stampa

[Reston, Va.] : , : U.S. Department of the Interior, U.S. Geological Survey, , 2014

Descrizione fisica

1 online resource (3 maps) : color + + pamphlet (iii, 14 pages)

Collana

Scientific investigations map ; ; 3285

Soggetti

Oil-shales - Bighorn Basin (Mont. and Wyo.)

Thermal analysis in earth sciences - Bighorn Basin (Mont. and Wyo.)

Geology, Stratigraphic - Cretaceous

Geological maps.

Maps.

Bighorn Basin (Mont. and Wyo.) Maps

Lingua di pubblicazione

Inglese

Formato

Materiale cartografico a stampa

Livello bibliografico

Monografia

Note generali

Title from title screen (viewed Feb. 12, 2014).

Includes location maps.

Nota di bibliografia

Includes bibliographical references in pamphlet (pages 10-14).



2.

Record Nr.

UNINA9910872788803321

Titolo

1996 IEEE International Conference on Microelectronic Test Structures

Pubbl/distr/stampa

[Place of publication not identified], : IEEE, 1996

Descrizione fisica

1 online resource (338 pages)

Disciplina

621.3815

Soggetti

Integrated circuits

Microelectronics

Lingua di pubblicazione

Inglese

Formato

Materiale a stampa

Livello bibliografico

Monografia

Note generali

Bibliographic Level Mode of Issuance: Monograph

Sommario/riassunto

The papers included in this leading international conference examine test structures for microelectronic devices, their recent progress and future directions. Included is a detailed treatment of current developments in silicon and gallium arsenide microelectronic test structure research, implementation, and applications. Also addressed are advances in device characterization, such as increased miniaturization, reduced operating voltages and reduced power requirements through improved measurement and test techniques. Topics highlighted include: Process Characterization, Dimensional Measurements, Interconnection, SOI & Material Characterization, Reliability, Device Characterization, Capacitance Measurements, Statistics.