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1. |
Record Nr. |
UNINA9910705179103321 |
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Autore |
Finn Thomas M. |
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Titolo |
Maps showing thermal maturity of Upper Cretaceous marine shales in the Bighorn Basin, Wyoming and Montana / / by Thomas M. Finn and Mark J. Pawlewicz |
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Pubbl/distr/stampa |
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[Reston, Va.] : , : U.S. Department of the Interior, U.S. Geological Survey, , 2014 |
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Descrizione fisica |
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1 online resource (3 maps) : color + + pamphlet (iii, 14 pages) |
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Collana |
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Scientific investigations map ; ; 3285 |
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Soggetti |
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Oil-shales - Bighorn Basin (Mont. and Wyo.) |
Thermal analysis in earth sciences - Bighorn Basin (Mont. and Wyo.) |
Geology, Stratigraphic - Cretaceous |
Geological maps. |
Maps. |
Bighorn Basin (Mont. and Wyo.) Maps |
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Lingua di pubblicazione |
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Formato |
Materiale cartografico a stampa |
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Livello bibliografico |
Monografia |
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Note generali |
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Title from title screen (viewed Feb. 12, 2014). |
Includes location maps. |
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Nota di bibliografia |
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Includes bibliographical references in pamphlet (pages 10-14). |
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2. |
Record Nr. |
UNINA9910872788803321 |
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Titolo |
1996 IEEE International Conference on Microelectronic Test Structures |
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Pubbl/distr/stampa |
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[Place of publication not identified], : IEEE, 1996 |
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Descrizione fisica |
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1 online resource (338 pages) |
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Disciplina |
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Soggetti |
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Integrated circuits |
Microelectronics |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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Note generali |
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Bibliographic Level Mode of Issuance: Monograph |
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Sommario/riassunto |
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The papers included in this leading international conference examine test structures for microelectronic devices, their recent progress and future directions. Included is a detailed treatment of current developments in silicon and gallium arsenide microelectronic test structure research, implementation, and applications. Also addressed are advances in device characterization, such as increased miniaturization, reduced operating voltages and reduced power requirements through improved measurement and test techniques. Topics highlighted include: Process Characterization, Dimensional Measurements, Interconnection, SOI & Material Characterization, Reliability, Device Characterization, Capacitance Measurements, Statistics. |
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