Record Nr.

UNINA9910699314303321

Autore

Niedra Janis M

Titolo

Switching characteristics of a 4H-SiC based bipolar junction transistor to 200 °C [[electronic resource] /] / Janis M. Niedra

Pubbl/distr/stampa


Cleveland, Ohio : , : National Aeronautics and Space Administration, Glenn Research Center, , [2006]

Descrizione fisica

1 online resource (6 pages) : illustrations

Collana

NASA/CR- ; ; 2006-214257

Soggetti

Junction transistors

High temperature

Bipolar transistors

Switching

Static loads

Electric potential

Lingua di pubblicazione

Inglese

Formato

Materiale a stampa

Livello bibliografico

Monografia

Note generali

Title from title screen (viewed on Oct. 20, 2010).

"November 2006."