Virtuous discourse : sensibility and community in late aighteenth-century Scotland / John Dwyer

• Record Nr.: UNINA990004083920403321
• Autore: Dwyer, John
• Pubbl/distr/stampa: Edinburgh : Donald, 1987
• ISBN: 0-85976-174-6
• Descrizione fisica: VIII, 204 p. ; 24 cm
• Disciplina: 170
• Locazione: FLFBC
• Collocazione: P.1 FRM 1105
• Lingua di pubblicazione: Inglese
• Formato: Materiale a stampa
• Livello bibliografico: Monografia

Design of Shallow p-type Dopants in ZnO (Presentation) [[electronic resource] /] / Su-Huai Wei, J. Li, and Y. Yan

• Record Nr.: UNINA9910698701403321
• Autore: Wei Su-Huai
• Pubbl/distr/stampa: [Place of publication not identified], : Washington, D.C., : United States. Dept. of Energy, : Oak Ridge, Tenn., : distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 2008
• Descrizione fisica: 1 online resource (32 pages) : color illustrations
• Collana: NREL/PR ; ; 520-43248
• Altri autori (Persone): LiJ; YanYanfa
• Soggetti: Semiconductor doping; Doped semiconductors; Crystals - Defects
• Lingua di pubblicazione: Inglese
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Note generali: Published through the Information Bridge: DOE Scientific and Technical ; Information.; "May 2008."; Presented at the 33rd IEEE Photovoltaic Specialist Conference, 11-16 May 2008 in San Diego, California.; National Renewable Energy Laboratory (NREL), Golden, CO.
• Sommario/riassunto: ZnO is a promising material for short wave-length opto-electronic devices such as UV lasers and LEDs due to its large exciton binding energy and low material cost. ZnO can be doped easily n-type, but the realization of stable p-type ZnO is rather difficult. Using first-principles band structure methods the authors address what causes the p-type doping difficulty in ZnO and how to overcome the p-type doping difficulty in ZnO.