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1. |
Record Nr. |
UNINA9910454177003321 |
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Autore |
Miura-Mattausch Mitiko <1949-> |
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Titolo |
The physics and modeling of MOSFETS [[electronic resource] ] : surface-potential model HiSIM / / Mitiko Miura-Mattausch, Hans Jurgen Mattausch, Tatsuya Ezaki |
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Pubbl/distr/stampa |
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Singapore ; ; Hackensack, NJ, : World Scientific, c2008 |
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ISBN |
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1-281-96089-6 |
9786611960896 |
981-281-205-9 |
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Descrizione fisica |
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1 online resource (378 p.) |
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Collana |
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International series on advances in solid state electronics and technology |
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Altri autori (Persone) |
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MattauschHans Jurgen |
EzakiTatsuya |
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Disciplina |
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Soggetti |
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Metal oxide semiconductor field-effect transistors |
Metal oxide semiconductor field-effect transistors - Mathematical models |
Electronic books. |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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Note generali |
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Bibliographic Level Mode of Issuance: Monograph |
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Nota di bibliografia |
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Includes bibliographical references and index. |
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Nota di contenuto |
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1. Semiconductor device physics. 1.1. Band structure concept. 1.2. Carrier density and fermi level in semiconductors. 1.3. P-N junction. 1.4. Device simulation. 1.5. Summary of equations and symbols presented in chapter 1 for semiconductor device physics -- 2. Basic compact surface-potential model of the MOSFET. 2.1. Compact modeling concept. 2.2. Device structure parameters of the MOSFET. 2.3. Surface potentials. 2.4. Charge densities. 2.5. Drain current. 2.6. Summary of equations and model parameters presented in chapter 2 for basic compact surface-potential model of the MOSFET -- 3. Advanced MOSFET phenomena modeling. 3.1. Threshold voltage shift. 3.2. Depletion effect of the poly-si gate. 3.3. Quantum-mechanical effects. 3.4. Mobility model. 3.5. Channel-length modulation. 3.6. Narrow-channel effects. 3.7. Effects of the length of the diffused source/drain contacts in Shallow-Trench Isolation (STI) technologies. 3.8. Temperature dependences. 3.9. Conservation of symmetry at V[symbol] = 0. 3.10. Harmonic distortions. 3.11. Summary of equations |
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and model parameters appearing in chapter 3 for advanced MOSFET phenomena modeling -- 4. Capacitances. 4.1. Intrinsic capacitances. 4.2. Overlap capacitances. 4.3. Longitudinal (lateral) -field-induced capacitance. 4.4. Fringing capacitance. 4.5. Summary of equations and model parameters appearing in chapter 4 for capacitances -- 5. Leakage currents and junction diode. 5.1. Leakage currents. 5.2. Bulk/source and bulk/drain junction models. 5.3. Summary of equations and model parameters appeared in chapter 5 for leakage currents and junction diode -- 6. Modeling of phenomena important for RF applications. 6.1. Noise models. 6.2. Non-Quasi-Static (NQS) model. 6.3. External MOS transistor resistances. 6.4. Summary of equations and model parameters appeared in chapter 6 for modeling of phenomena important for RF applications -- 7. Summary of HiSIM's model equations, parameters, and parameter-extraction method. 7.1. Model equations of HiSIM. 7.2. Model flags and exclusion of modeled effects. 7.3. Model parameters and their meaning. 7.4. Default values of the model parameter. 7.5. Parameter extraction method. |
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Sommario/riassunto |
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This volume provides a timely description of the latest compact MOS transistor models for circuit simulation. The first generation BSIM3 and BSIM4 models that have dominated circuit simulation in the last decade are no longer capable of characterizing all the important features of modern sub-100nm MOS transistors. This book discusses the second generation MOS transistor models that are now in urgent demand and being brought into the initial phase of manufacturing applications. It considers how the models are to include the complete drift-diffusion theory using the surface potential variable in the MOS transistor channel in order to give one characterization equation. |
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2. |
Record Nr. |
UNINA9910677511703321 |
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Titolo |
Pediatric cardiac surgery |
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Pubbl/distr/stampa |
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Chichester, West Sussex, UK : , : Wiley Blackwell, , 2013 |
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ISBN |
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1-118-32075-1 |
1-299-15858-7 |
1-118-32078-6 |
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Edizione |
[4th ed.] |
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Descrizione fisica |
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1 online resource (976 p.) |
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Altri autori (Persone) |
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MavroudisConstantine |
BackerCarl L |
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Disciplina |
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617.4/12059 |
617.4120083 |
617.412059 |
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Soggetti |
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Congenital heart disease in children - Surgery |
Pediatric cardiology |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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Note generali |
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Description based upon print version of record. |
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Nota di bibliografia |
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Includes bibliographical references and index. |
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Nota di contenuto |
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Title page; Copyright page; Contents; List of Contributors; Preface; CHAPTER 1: Development of the Heart and Great Vessels; Introduction; Formation of Cardiac Precursors; Formation of the Tube Heart; The Tube Heart, Segments, and Segmental Identity; Genetic Determination of Cardiac Segmentation; Looping; Looping, Convergence, and Septation - Key Landmarks; Endocardial Cushion Development and Myocardialization; Atrial Septation; Interventricular Septation; The Atrioventricular Junction Segment and Atrioventricular Valve Development; Development of the Conduction System |
Morphogenesis of the Outflow TractLandmarks in the Outflow Tract; Aorticopulmonary Septation; Development of the Semilunar Valves; Conus Septation; Morphogenesis of the Great Vessels and Coronary Circulation; The Neural Crest and Cardiac Development; Origins of the Outflow Tract Endothelium; Epicardial Cell Migration and Development of the Coronary Arteries; Development of the Aortic Arch; Development of the Pulmonary Veins; Development of the Systemic Veins; References; CHAPTER 2: Nomenclature and Classification of Pediatric and Congenital Heart Disease; Background; Segmental Anatomy |
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The Meaning of Left and RightCardiac Relations and Cardiac Connections (or Cardiac Alignments); Atrial Situs; Ventricular Loop; Atrioventricular Connection; Ventriculoarterial Connection; The Position of the Heart and the Orientation of Its Apex; Classification of Cardiac Lesions; Description of Cardiac Lesions; Consensus Definitions; Nomenclature, Definitions, and Classification Controversies; Summary; References; CHAPTER 3: Physiology of the Fetal and Neonatal Circulations and Fetal Cardiac Surgery; Fetal Circulation; Fetal Intra- and Extracardiac Shunts; Venous Return |
Cardiac Output, Oxygenation, and DistributionIntracardiac and Vascular Pressures; Circulatory Changes at Birth; The Transition; Closure of the Ductus Arteriosus; Pulmonary Circulation; Myocardial Performance; Fetal Surgery; Fetal Cardiac Surgery; Animal Models of Congenital Lesions; Cardiopulmonary Bypass and the Placenta; Understanding Placental Hemodynamics; The Fetal Stress Response; Role of the Endothelium in Placental Dysfunction; Understanding the Fetal Bypass Circuit; Fetal Myocardial Protection; Miscellaneous Factors; Future Directions; References |
CHAPTER 4: Preoperative Diagnostic EvaluationIntroduction; History; Physical Examination; Chest Radiography; Abdominal Situs; Cardiac Silhouette; Aortic Arch; Lung Parenchyma; Electrocardiography; Preoperative Echocardiography; Atrial Septal Defects; Ventricular Septal Defects; Tetralogy of Fallot; Truncus Arteriosus; Common Atrioventricular Canal; d-Transposition of the Great Arteries; Coarctation of the Aorta; Hypoplastic Left Heart Syndrome; Cardiac Magnetic Resonance Imaging; Applications of Cardiac MRI; Intracardiac Shunts; Tetralogy of Fallot (TOF) |
Pulmonary Blood Supply in Patients with Pulmonary Atresia |
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Sommario/riassunto |
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Pediatric cardiac surgery is a dynamic, fast-moving field. Busy practitioners, like you, need clear and comprehensive guidance you can rely on to ensure optimal patient care. For over 25 years Pediatric Cardiac Surgery has been the gold-standard reference for pediatric and adult congenital heart surgeons, pediatric and congenital cardiologists, intensivists, anesthesiologists, residents and nurses. Now, in this thoroughly revised fourth edition, you again get trusted, complete coverage of the field with timely new features and expert reviews of critical topics incl |
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